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    • 1. 发明授权
    • Fast luminescent silicon
    • 快速发光硅
    • US6027666A
    • 2000-02-22
    • US90975
    • 1998-06-05
    • Geoffrey A. OzinOmer DagHong Yang
    • Geoffrey A. OzinOmer DagHong Yang
    • H01L21/205H01L27/15H01L33/34C09K11/56
    • H01L33/34
    • There are provided mesoporous silica materials containing in their pores stabilized clusters of silicon atom, of size 2 nanometers or less, and capable of photoluminescence to emit fast photons. They are prepared by chemical vapor deposition of silicon or a silicon precursor such as disilane, under soft conditions such as temperature of 100-150.degree. C., into the mesopores of silicate films which have mesoporous channels prepared by growth of the films using a template to control their sizes, but without removing the template residues from the films prior to the chemical vapor deposition. The template residues serve to limit the size of the silicon clusters which conform. The use of the soft conditions on CVD retains the template residues in an intact, substantially unchanged form. The resultant films have clusters of silicon, of 2 nanometer size or less, anchored to the mesopores, and air stable, so that they can be used in optoelectronic devices in conjunction with standard silicon semiconductors.
    • 提供了介孔二氧化硅材料,其孔中含有尺寸为2纳米或更小的硅原子的稳定团簇,并能够发光以发射快速光子。 它们通过硅或硅前体如乙硅烷的化学气相沉积在诸如温度为100-150℃的软条件下制备成具有通过使用模板生长薄膜制备的介孔的硅酸盐膜的介孔 以控制其尺寸,但是在化学气相沉积之前不从膜中去除模板残留物。 模板残基用于限制符合的硅簇的尺寸。 在CVD上使用软性条件保留了完整的,基本上不变的形式的模板残基。 所得膜具有2纳米尺寸或更小的硅簇,锚定于中孔,并且空气稳定,使得它们可以与标准硅半导体结合使用在光电子器件中。
    • 2. 发明授权
    • Fast luminescent silicon
    • 快速发光硅
    • US06319427B1
    • 2001-11-20
    • US09499305
    • 2000-02-07
    • Geoffrey A. OzinÖmer DagHong Yang
    • Geoffrey A. OzinÖmer DagHong Yang
    • C09K1156
    • H01L33/34
    • There are provided mesoporous silica materials containing in their pores stabilized clusters of silicon atoms, of size 2 nanometers or less, and capable of photoluminescence to emit fast photons. They are prepared by chemical vapour deposition of silicon or a silicon precursor such as disilane, under soft conditions such as temperature of 100-150° C., into the mesopores of silicate films which have mesoporous channels prepared by growth of the films using a template to control their sizes, but without removing the template residues from the films prior to the chemical vapour deposition. The template residues serve to limit the size of the silicon clusters which conform. The use of the soft conditions on CVD retains the template residues in an intact, substantially unchanged form. The resultant films have clusters of silicon, of 2 nanometer size or less, anchored to the mesopores, and air stable, so that they can be used in optoelectronic devices in conjunction with standard silicon semiconductors.
    • 提供介孔二氧化硅材料,其孔中含有尺寸为2纳米或更小的硅原子的稳定团簇,并能够发光以发射快速光子。 它们通过硅或硅前体如乙硅烷的化学气相沉积在诸如温度为100-150℃的软条件下制备成具有通过使用模板生长的膜制备的介孔的硅酸盐膜的介孔 以控制其尺寸,但是在化学气相沉积之前不从膜中去除模板残留物。 模板残基用于限制符合的硅簇的尺寸。 在CVD上使用软性条件保留了完整的,基本上不变的形式的模板残基。 所得膜具有2纳米尺寸或更小的硅簇,锚定于中孔,并且空气稳定,使得它们可以与标准硅半导体结合使用在光电子器件中。