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1. 发明专利

JP2005051255A Flip chip led device with substrate which was made thin or removed 审中-公开
标题翻译：带芯片的FLIP芯片LED器件被薄化或去除
公开(公告)号：JP2005051255A
公开(公告)日：2005-02-24
申请号：JP2004245982
申请日：2004-07-29
申请人： Gelcore Llc , ゲルコアーリミテッドライアビリティカンパニー
发明人： ELIASHEVICH IVAN , STEFANOV EMIL P , KOLODIN BORIS
IPC分类号： H01L21/00 , H01L25/075 , H01L33/00 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/16 , H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an improved flip chip LED device that can deal successfully with restrictions and the like associated with the conventional method and device and a method for manufacturing the LED device.
SOLUTION: The method to manufacture the flip chip LED device is to grow an epitaxial layer (14) on a growth substrate (16) for the purpose of forming an epitaxial wafer. Multiple LED devices are manufactured on the epitaxial wafer. The epitaxial wafer is diced to form a device die (10). The flip-chip bonding of the device die (10) with a mount (12) is performed. The stage of the flip-chip bonding includes a process of fixing the device die (10) to the mount (12) by bonding at least one electrode (20, 22) to at least one bonding pad (26, 28) of the mount (12). Following the flip-chip bonding, the thickness of the growth substrate (16) of the device die (10) is reduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种改进的倒装芯片LED器件，其可以成功地处理与常规方法和器件相关的限制等，以及制造LED器件的方法。解决方案：制造倒装芯片LED器件的方法是在生长衬底（16）上生长外延层（14），以形成外延晶片。在外延晶片上制造多个LED器件。切割外延晶片以形成器件管芯（10）。执行器件管芯（10）与安装件（12）的倒装焊接。倒装芯片接合的阶段包括通过将至少一个电极（20,22）粘合到安装件（10）的至少一个焊盘（26,28）上而将器件裸片（10）固定到安装件（12）（12）。在倒装芯片接合之后，器件管芯（10）的生长衬底（16）的厚度减小。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

DE102004036295A1 Fabrication of flip-chip light emitting diode device by fabricating light emitting diode devices on epitaxial wafer, dicing the epitaxial wafer, flip chip bonding the device die to mount, and reducing thickness of growth substrate 未知
公开(公告)号：DE102004036295A1
公开(公告)日：2005-03-03
申请号：DE102004036295
申请日：2004-07-27
申请人： GELCORE LLC N D GES D STAATES
发明人： ELIASHEVICH IVAN , KOLODIN BORIS , STEFANOV EMIL P
IPC分类号： H01L21/00 , H01L25/075 , H01L33/00 , H01L33/62
摘要： A flip-chip light emitting diode device is fabricated by fabricating light emitting diode devices on the epitaxial wafer, dicing the epitaxial wafer, flip chip bonding the device die to mount (12), and reducing thickness of the growth substrate of the device die. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to bonding pads (26, 28) of the mount. Fabrication of flip-chip light emitting diode device includes: (a) depositing epitaxial layers on a growth substrate to produce an epitaxial wafer, (b) fabricating a number of light emitting diode devices on the epitaxial wafer, (c) dicing the epitaxial wafer to generate a device die, flip chip bonding the device die to a mount, and subsequent to the flip chip bonding, (d) reducing a thickness of the growth substrate of the device die. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. An independent claim is also included for a flip-chip light emitting diode device including: (i) a mount including bonding bumps (30); (ii) a light emitting diode device die having a device layers stack (14) that is flip chip bonded to the bonding bumps of the mount; and (iii) an underfill material arranged between the light emitting diode device die and the mount. The underfill material supports the light emitting diode device die and preventing the light emitting diode device die from fracturing.

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