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1. 发明申请

US20120061802A1 BIPOLAR JUNCTION TRANSISTOR 审中-公开
标题翻译：双极接头晶体管
公开(公告)号：US20120061802A1
公开(公告)日：2012-03-15
申请号：US12878062
申请日：2010-09-09
申请人： Gareth NICHOLAS , Benjamin James Hadwen , Sunay Shah
发明人： Gareth NICHOLAS , Benjamin James Hadwen , Sunay Shah
IPC分类号： H01L29/73
CPC分类号： H01L29/7317 , H01L29/0821 , H01L29/1008
摘要： A bipolar junction transistor includes a semiconductor island on an insulating substrate; an emitter and at least one of a collector and sub collector within the semiconductor island, the emitter and the at least one of the collector and the sub collector being of a first conductivity type; a base within the semiconductor island separating the emitter and the at least one of the collector and the sub collector, the base being of a second conductivity type; a base contact region within the semiconductor island, the base contact region being of the second conductivity type; and a connecting base region adjacent the base within the semiconductor island and connecting the base to the base contact region while not directly contacting the emitter, the connecting base region being of the second conductivity type with a doping concentration less than a doping concentration of the base contact region.
摘要翻译：双极结型晶体管包括绝缘基板上的半导体岛; 半导体岛内的发射极和集电极和副集电极中的至少一个，所述发射极和所述集电极和副集电极中的至少一个为第一导电型; 分离发射极和集电极和副集电极中的至少一个的半导体岛内的基极，基极为第二导电型; 半导体岛内的基极接触区域，第二导电类型的基极接触区域; 以及与所述半导体岛内的所述基极相邻的连接基极区域，并且在不直接接触所述发射极的同时将所述基极连接到所述基极接触区域，所述连接基极区域为所述第二导电型，其掺杂浓度小于所述基极的掺杂浓度接触区域

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