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    • 3. 发明授权
    • Dual-facing camera assembly
    • 双面相机组合
    • US08497536B2
    • 2013-07-30
    • US13235121
    • 2011-09-16
    • Gang ChenAshish ShahDuli MaoHsin-Chih TaiHoward E. Rhodes
    • Gang ChenAshish ShahDuli MaoHsin-Chih TaiHoward E. Rhodes
    • H01L31/062H01L31/113
    • H01L27/14645H01L27/14605H01L27/1462H01L27/14621H01L27/14627H01L27/14634H01L27/14636H01L27/1464H01L27/1469
    • Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.
    • 本发明的实施例涉及一种照相机组件,其包括背面照相机和可操作地耦合在一起的例如相机(例如,粘合的,堆叠在公共衬底上)的前置照相机。 在本发明的一些实施例中,具有前侧照明(FSI)成像像素阵列的系统被结合到具有背面照明(BSI)成像像素阵列的系统,从而产生具有最小尺寸的照相机组件(例如,减小的 厚度与现有技术的解决方案相比)。 可以使用FSI图像传感器晶片作为BSI图像传感器晶片的处理晶片,当其变薄时,从而减小整个相机模块的厚度。 根据本发明的其它实施例,两个封装管芯,一个BSI图像传感器,另一个是FSI图像传感器,堆叠在诸如印刷电路板的公共基板上,并且通过再分配层可操作地耦合在一起。
    • 9. 发明授权
    • In-pixel high dynamic range imaging
    • 像素高动态范围成像
    • US08643132B2
    • 2014-02-04
    • US13155969
    • 2011-06-08
    • Gang ChenDuli MaoHsin-Chih TaiHoward E. Rhodes
    • Gang ChenDuli MaoHsin-Chih TaiHoward E. Rhodes
    • H01L31/06H01L31/062H01L31/113
    • H01L27/14616H01L27/14612H01L27/14643
    • Embodiments of the invention describe providing high dynamic range imaging (HDRI or simply HDR) to an imaging pixel by coupling a floating diffusion node of the imaging pixel to a plurality of metal-oxide semiconductor (MOS) capacitance regions. It is understood that a MOS capacitance region only turns “on” (i.e., changes the overall capacitance of the floating diffusion node) when the voltage at the floating diffusion node (or a voltage difference between a gate node and the floating diffusion node) is greater than its threshold voltage; before the MOS capacitance region is “on” it does not contribute to the overall capacitance or conversion gain of the floating diffusion node.Each of the MOS capacitance regions will have different threshold voltages, thereby turning “on” at different illumination conditions. This increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system.
    • 本发明的实施例描述了通过将成像像素的浮动扩散节点耦合到多个金属氧化物半导体(MOS)电容区域来向成像像素提供高动态范围成像(HDRI或简单的HDR)。 可以理解,当浮动扩散节点处的电压(或者栅极节点和浮动扩散节点之间的电压差)为(...)时,MOS电容区域只会变为“导通”(即,改变浮动扩散节点的整体电容) 大于其阈值电压; 在MOS电容区域“接通”之前,它不会对浮动扩散节点的整体电容或转换增益有贡献。 每个MOS电容区域将具有不同的阈值电压,从而在不同的照明条件下“打开”。 这增加了成像像素的动态范围,从而为主机成像系统提供HDR。