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1. 发明申请

US20090068840A1 POLISHING LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：抛光液和制造半导体器件的方法
公开(公告)号：US20090068840A1
公开(公告)日：2009-03-12
申请号：US12200388
申请日：2008-08-28
申请人： Gaku MINAMIHABA , Shunsuke Doi , Nobuyuki Kurashima , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Gaku MINAMIHABA , Shunsuke Doi , Nobuyuki Kurashima , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053 , H01L21/7682 , H01L21/76834
摘要： A polishing liquid is provided, which includes abrasive grains and a surfactant. The abrasive grains contain a first colloidal silica having an average primary particle diameter of 45-80 nm and a second colloidal silica having an average primary particle diameter of 10-25 nm. The weight w1 of the first colloidal silica and the weight w2 of the second colloidal silica satisfy the relationship represented by the following expression 1. 0.63≦w1/(w1+w2)≦0.83 Expression 1
摘要翻译：提供了包括磨粒和表面活性剂的抛光液。磨粒含有平均一次粒径为45-80nm的第一胶体二氧化硅和平均一次粒径为10-25nm的第二胶体二氧化硅。第一胶体二氧化硅的重量w1和第二胶态二氧化硅的重量w2满足下述式1所示的关系。<？在线式描述=“在线式”末端=“铅”≥0.63 <= w1 /（w1 + w2）<= 0.83表达式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>

2. 发明申请

US20080020683A1 Polishing method and polishing pad 审中-公开
标题翻译：抛光方法和抛光垫
公开(公告)号：US20080020683A1
公开(公告)日：2008-01-24
申请号：US11826646
申请日：2007-07-17
申请人： Shunsuke Doi , Hiroyuki Yano
发明人： Shunsuke Doi , Hiroyuki Yano
IPC分类号： B24B29/00 , B24B1/00
CPC分类号： B24B37/26
摘要： A polishing method includes polishing a surface to be polished of a target object by using a polishing pad in which a cutout part been formed by cutting out a polishing surface from an outer circumferential end toward an inner part, and after polishing, separating the target object from the polishing pad at a position in contact with the cutout part.
摘要翻译：抛光方法包括通过使用通过从外周端朝向内部切割研磨表面而形成切口部的抛光垫来抛光目标物体的待抛光表面，并且在抛光之后，将目标物体从与所述切口部接触的位置处的所述抛光垫。

3. 发明申请

US20090075487A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090075487A1
公开(公告)日：2009-03-19
申请号：US12208372
申请日：2008-09-11
申请人： Shunsuke Doi , Yukiteru Matsui
发明人： Shunsuke Doi , Yukiteru Matsui
IPC分类号： H01L21/31
CPC分类号： H01L21/31053 , H01L21/76229
摘要： Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.
摘要翻译：公开了一种制造半导体器件的方法，其包括在半导体衬底上形成绝缘膜，该半导体衬底具有形成在除了凹部之外的半导体衬底之上的凹部和阻挡膜，从而用绝缘膜填充凹部，通过抛光执行第一抛光该绝缘膜通过使用含有氧化铈和第一阴离子表面活性剂的第一研磨液的化学机械研磨法进行化学机械研磨，得到平坦化面，通过使用含有氧化铈的第二研磨液，对平坦化的绝缘膜进行研磨，进行第二次研磨，在与第一研磨不同的抛光条件下，分子量小于第一阴离子表面活性剂的第二阴离子表面活性剂，从而暴露出止动膜。

4. 发明授权

US07829406B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07829406B2
公开(公告)日：2010-11-09
申请号：US12208372
申请日：2008-09-11
申请人： Shunsuke Doi , Yukiteru Matsui
发明人： Shunsuke Doi , Yukiteru Matsui
IPC分类号： H01L21/8238
CPC分类号： H01L21/31053 , H01L21/76229
摘要： Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.
摘要翻译：公开了一种制造半导体器件的方法，其包括在半导体衬底上形成绝缘膜，该半导体衬底具有形成在除了凹部之外的半导体衬底之上的凹部和阻挡膜，从而用绝缘膜填充凹部，通过抛光执行第一抛光该绝缘膜通过使用含有氧化铈和第一阴离子表面活性剂的第一研磨液的化学机械研磨法进行化学机械研磨，得到平坦化面，通过使用含有氧化铈的第二研磨液，对平坦化的绝缘膜进行研磨，进行第二次研磨，在与第一研磨不同的抛光条件下，分子量小于第一阴离子表面活性剂的第二阴离子表面活性剂，从而暴露出止动膜。

5. 发明授权

US08084364B2 Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08084364B2
公开(公告)日：2011-12-27
申请号：US12501690
申请日：2009-07-13
申请人： Shunsuke Doi , Atsushi Shigeta
发明人： Shunsuke Doi , Atsushi Shigeta
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , H01L21/3081 , H01L21/31053
摘要： A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing the amorphous silicon film and partially removing the semiconductor substrate, thereby forming an element isolation trench in a surface of the semiconductor substrate, forming an insulating film above the amorphous silicon film so that the element isolation trench is filled with the insulating film, polishing the insulating film by a chemical-mechanical polishing method with the amorphous silicon film serving as a stopper, thereby planarizing an upper surface of the insulating film, and thermally-treating the amorphous silicon film, thereby converting the amorphous silicon film to a polysilicon film after polishing the insulating film.
摘要翻译：一种制造半导体器件的方法，包括在半导体衬底上形成非晶硅膜，部分地去除非晶硅膜并部分地去除半导体衬底，从而在半导体衬底的表面中形成元件隔离沟槽，形成绝缘膜在绝缘膜上填充元件隔离沟槽，通过化学机械研磨法，以非晶硅膜作为阻挡层对绝缘膜进行研磨，由此使绝缘膜的上表面平坦化，热处理非晶硅膜，从而在抛光绝缘膜之后将非晶硅膜转化为多晶硅膜。

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