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1. 发明申请

US20080122881A1 SECURITY SYSTEM USING CONDUCTIVE AND NON-CONDUCTIVE REGIONS 有权
标题翻译：使用导电和非导电区域的安全系统
公开(公告)号：US20080122881A1
公开(公告)日：2008-05-29
申请号：US11563989
申请日：2006-11-28
申请人： Gabriel Iftime , Yiliang Wu , Paul F. Smith , Peter M. Kazmaier , Beng S. Ong
发明人： Gabriel Iftime , Yiliang Wu , Paul F. Smith , Peter M. Kazmaier , Beng S. Ong
IPC分类号： B41J29/38 , G06K19/06
CPC分类号： B41J29/393 , G06K19/067 , Y10S283/901
摘要： Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.
摘要翻译：公开了一种物品，例如文件，包括其上具有多个分开的印刷标记的基板，其中印刷的标记包括导电印刷标记和基本不导电的印刷标记。可以例如通过测量每个印刷标记的电阻或电流来检测衬底上不同的导电和基本不导电的区域。可以将不同的导电和基本上不导电的区域的图案用作标准办公设备不能复制的真实性的安全模式，和/或可用于加密该项目中二进制代码形式的信息。还描述了用于形成和检测不同印刷标记的系统。

2. 发明授权

US07918485B2 Security system using conductive and non-conductive regions 有权
标题翻译：使用导电和非导电区域的安全系统
公开(公告)号：US07918485B2
公开(公告)日：2011-04-05
申请号：US11563989
申请日：2006-11-28
申请人： Gabriel Iftime , Yiliang Wu , Paul F. Smith , Peter M. Kazmaier , Beng S. Ong
发明人： Gabriel Iftime , Yiliang Wu , Paul F. Smith , Peter M. Kazmaier , Beng S. Ong
IPC分类号： B42D15/00 , B42D1/00 , B42D15/10
CPC分类号： B41J29/393 , G06K19/067 , Y10S283/901
摘要： Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.
摘要翻译：公开了一种物品，例如文件，包括其上具有多个分开的印刷标记的基板，其中印刷的标记包括导电印刷标记和基本不导电的印刷标记。可以例如通过测量每个印刷标记的电阻或电流来检测衬底上不同的导电和基本不导电的区域。可以将不同的导电和基本上不导电的区域的图案用作标准办公设备不能复制的真实性的安全模式，和/或可用于加密该项目中二进制代码形式的信息。还描述了用于形成和检测不同印刷标记的系统。

3. 发明申请

US20080237581A1 DEVICE WITH PHASE-SEPARATED DIELECTRIC STRUCTURE 有权
标题翻译：具有相分离介电结构的器件
公开(公告)号：US20080237581A1
公开(公告)日：2008-10-02
申请号：US11695138
申请日：2007-04-02
申请人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
IPC分类号： H01L29/08 , H01L23/58 , H01L29/76
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
摘要翻译：一种电子设备，包括以下任何顺序：（a）半导体层; 和（b）包含低k介电聚合物和较高k电介质聚合物的相分离电介质结构，其中所述低k电介质聚合物在所述电介质区域中比所述较高k电介质聚合物更高的浓度最接近半导体层的结构。

4. 发明授权

US07829625B2 Phase-separated dielectric structure fabrication process 有权
公开(公告)号：US07829625B2
公开(公告)日：2010-11-09
申请号：US12436975
申请日：2009-05-07
申请人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
IPC分类号： C08L83/00 , C08K5/06
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

5. 发明授权

US07795614B2 Device with phase-separated dielectric structure 有权
标题翻译：具有相分离介质结构的器件
公开(公告)号：US07795614B2
公开(公告)日：2010-09-14
申请号：US11695138
申请日：2007-04-02
申请人： Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
发明人： Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
IPC分类号： H01L29/10
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.
摘要翻译：一种电子设备，包括以下任何顺序：（a）半导体层; 和（b）包含低k介电聚合物和较高k电介质聚合物的相分离电介质结构，其中所述低k电介质聚合物在所述电介质区域中比所述较高k电介质聚合物更高的浓度最接近半导体层的结构。

6. 发明申请

US20080242112A1 PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 有权
标题翻译：相分离电介质结构工艺
公开(公告)号：US20080242112A1
公开(公告)日：2008-10-02
申请号：US11695131
申请日：2007-04-02
申请人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
IPC分类号： H01L21/31
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
摘要翻译：一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

7. 发明授权

US07754510B2 Phase-separated dielectric structure fabrication process 有权
标题翻译：相分离电介质结构制造工艺
公开(公告)号：US07754510B2
公开(公告)日：2010-07-13
申请号：US11695131
申请日：2007-04-02
申请人： Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
发明人： Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
IPC分类号： H01L21/00
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
摘要翻译：一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

8. 发明申请

US20090234056A1 PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 有权
标题翻译：相分离电介质结构工艺
公开(公告)号：US20090234056A1
公开(公告)日：2009-09-17
申请号：US12436975
申请日：2009-05-07
申请人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Hadi K. Mahabadi , Beng S. Ong , Paul F. Smith
IPC分类号： C08K5/06 , C08K5/05
CPC分类号： H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
摘要翻译：一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。

9. 发明授权

US07397086B2 Top-gate thin-film transistor 有权
标题翻译：顶栅薄膜晶体管
公开(公告)号：US07397086B2
公开(公告)日：2008-07-08
申请号：US11317168
申请日：2005-12-23
申请人： Yiliang Wu , Beng S. Ong , Paul F. Smith
发明人： Yiliang Wu , Beng S. Ong , Paul F. Smith
IPC分类号： H01L29/76
CPC分类号： H01L51/0541 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/052 , H01L51/0558 , H01L51/107
摘要： A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the polymer is selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. In other embodiments, it is a self-assembling polymeric monolayer of a silane agent and an organophosphonic acid. The performance-enhancing layer directly contacts the substrate. The layer improves the carrier mobility and current on/off ratio of the thin film transistor.
摘要翻译：本文提供了诸如顶栅薄膜晶体管的薄膜晶体管。薄膜晶体管具有性能增强层，例如性能增强底层，其包含聚酰亚胺以外的聚合物。在具体实施方案中，聚合物选自聚硅氧烷，聚倍半硅氧烷及其混合物。在其它实施方案中，它是硅烷试剂和有机膦酸的自组装聚合物单层。性能增强层直接接触基板。该层改善了薄膜晶体管的载流子迁移率和电流开/关比。

10. 发明授权

US08609867B2 Substituted indolocarbazoles 有权
标题翻译：取代的indolocarbazoles
公开(公告)号：US08609867B2
公开(公告)日：2013-12-17
申请号：US13366857
申请日：2012-02-06
申请人： Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
发明人： Yiliang Wu , Beng S. Ong , Yu Qi , Yuning Li
IPC分类号： C07D487/04 , C07D487/14
CPC分类号： H01L51/0072 , H01L51/0067 , H01L51/0541
摘要： A substituted indolocarbazole comprising at least one optionally substituted thienyl.
摘要翻译：包含至少一个任选取代的噻吩基的取代的吲哚咔唑。

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