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1. 发明申请

US20140273370A1 TECHNIQUE FOR MANUFACTURING SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES 有权
标题翻译：制造包含不同阈值电压的晶体管的半导体器件的技术
公开(公告)号：US20140273370A1
公开(公告)日：2014-09-18
申请号：US13799239
申请日：2013-03-13
申请人： GLOBAL FOUNDERIES INC.
发明人： Martin Gerhardt , Stefan Flachowsky , Matthias Kessler
IPC分类号： H01L29/66 , H01L21/265 , H01L21/8238
CPC分类号： H01L21/8238 , H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L29/1083 , H01L29/6659
摘要： When forming semiconductor devices including transistors with different threshold voltages, the different threshold voltages of transistors of the same conductivity type are substantially defined by performing different halo implantations. As the other implantations performed typically in the same manufacturing step, such as pre-amorphization, source and drain extension implantation and extra diffusion engineering implantations, may be identical for different threshold voltages, these implantations, in addition to a common halo base implantation, may be performed for all transistors of the same conductivity type in a common implantation sequence. Higher threshold voltages of specific transistors may be subsequently achieved by an additional low-dose halo implantation while the other transistors are covered by a resist mask. Thus, the amount of atoms of the implant species in the required resist masks is reduced so that removal of the resist masks is facilitated. Furthermore, the number of implantation steps is decreased compared to conventional manufacturing processes.
摘要翻译：当形成包括具有不同阈值电压的晶体管的半导体器件时，相同导电类型的晶体管的不同阈值电压基本上通过执行不同的光晕注入来定义。由于通常在同一制造步骤中执行的其它植入，例如预非晶化，源极和漏极延伸注入以及额外的扩散工程注入，对于不同的阈值电压可以是相同的，除了常见的晕基植入之外，这些植入可以在同一种植入序列中对相同导电类型的所有晶体管执行。随后可以通过额外的低剂量晕圈注入实现特定晶体管的较高阈值电压，而另一晶体管被抗蚀剂掩模覆盖。因此，所需抗蚀剂掩模中的注入物种的原子量减少，从而便于除去抗蚀剂掩模。此外，与常规制造工艺相比，植入步骤的数量减少。

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