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1. 发明公开

EP1715086A1 Method for reducing defect concentrations in crystals 有权
标题翻译：克里斯塔伦（Ver。）的维克多伦（Verminderung von Defektkonzentrationen）
公开(公告)号：EP1715086A1
公开(公告)日：2006-10-25
申请号：EP06013705.6
申请日：2003-06-25
申请人： GENERAL ELECTRIC COMPANY
发明人： D'Evelyn, Mark Philip , Arthur, Stephen Daley , Rowland, Larry Burton , Vagaralli, Suresh Shankarappa , Lucek, John William , Anthony, Thomas Richard , Levinson, Lionel Monty
IPC分类号： C30B33/00
CPC分类号： B01J3/062 , B01J3/065 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译：通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。将晶体和压力介质设置在高压电池中并放置在高压装置中，用于在足够高的压力和高温的反应条件下进行处理足以在一次或多次去除缺陷或减轻单一应变中的应变的时间水晶。

2. 发明授权

EP0597613B1 Infrared radiation curable organopolysiloxane compositions 失效
标题翻译：固化通过红外辐射有机聚硅氧烷组合
公开(公告)号：EP0597613B1
公开(公告)日：2001-01-31
申请号：EP93308698.5
申请日：1993-11-01
申请人： GENERAL ELECTRIC COMPANY
发明人： Levinson, Lionel Monty , Lewis, Larry Neil , Zumbrum, Michael Allen , Schultz, William Newell , Sumpter, Chris Allen
IPC分类号： C08L83/04
CPC分类号： C08L83/04 , C08G77/12 , C08G77/20 , C08L83/00 , C08L2666/52 , C08L2666/54 , C08L2666/28

3. 发明授权

EP0667404B1 Conversion of doped polycrystalline material to single crystal material 失效
标题翻译：掺杂多晶材料转化成单晶
公开(公告)号：EP0667404B1
公开(公告)日：1998-06-03
申请号：EP95300260.7
申请日：1995-01-17
申请人： GENERAL ELECTRIC COMPANY
发明人： Scott, Curtis Edward , Kaliszewski, Mary Sue , Levinson, Lionel Monty
IPC分类号： C30B29/20 , C30B1/00
CPC分类号： C30B1/00 , C30B29/20
摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

4. 发明授权

EP0184182B1 Tubular varistor arrangement 失效
标题翻译：管状变量安排
公开(公告)号：EP0184182B1
公开(公告)日：1989-07-26
申请号：EP85115302.3
申请日：1985-12-03
申请人： GENERAL ELECTRIC COMPANY
发明人： Levinson, Lionel Monty
IPC分类号： H01C7/12
CPC分类号： H01C7/12 , H01R13/53

5. 发明公开

EP1180805A2 An oled fiber light source 审中-公开
标题翻译： Lichtquelle bestehend aus einem OLED faser
公开(公告)号：EP1180805A2
公开(公告)日：2002-02-20
申请号：EP01306652.7
申请日：2001-08-03
申请人： GENERAL ELECTRIC COMPANY
发明人： Duggal, Anil Raj , Levinson, Lionel Monty
IPC分类号： H01L51/20 , F21V8/00
CPC分类号： G02B6/0001 , C23C18/1651 , C23C18/1653 , C25D7/0607 , H01L51/5287
摘要： A flexible organic light emitting diode (OLED) fiber light source is provided. The OLED contains a fiber core, a cathode, at least one organic radiation emitting layer and a transparent anode. The fiber light source may be used as a flexible novelty lighting article or coiled inside a large area lighting source.
摘要翻译：提供了柔性有机发光二极管（OLED）光纤光源。 OLED包含纤维芯，阴极，至少一个有机辐射发射层和透明阳极。光纤光源可以用作灵活的新颖照明物品或卷绕在大面积照明源内。

6. 发明授权

EP0625594B1 Solid state process for the conversion of polycrystalline alumina to sapphire 失效
标题翻译：对于多晶氧化铝转化为蓝宝石固态过程
公开(公告)号：EP0625594B1
公开(公告)日：2000-04-05
申请号：EP94303398.5
申请日：1994-05-11
申请人： GENERAL ELECTRIC COMPANY
发明人： Maxwell, Randolph E. , Scott, Curtis Edward , Kaliszewski, Mary Sue , Jones, Marshall Gordon , Levinson, Lionel Monty , Erikson, Carl Edward
IPC分类号： C30B1/02 , C30B29/20
CPC分类号： C30B13/06 , C30B1/00 , C30B1/08 , C30B13/00 , C30B29/20 , Y10S117/904
摘要： Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800 DEG C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.

7. 发明公开

EP0762439A3 Current limiting device 失效
公开(公告)号：EP0762439A3
公开(公告)日：1998-01-14
申请号：EP96304363.3
申请日：1996-06-11
申请人： GENERAL ELECTRIC COMPANY
发明人： Duggal, Anil Raj , Patchen, Harold Jay , Levinson, Lionel Monty , Lewis, Larry Neil
IPC分类号： H01C7/12
摘要： A current limiting device utilizing an electrically conductive composite material and an inhomogeneous distribution of resistance structure is disclosed. The inhomogeneous distribution is typically chosen so that at least one selected thin layer of the current limiting device has much higher resistance than the rest of the current limiting device. In the actual device, pressure (P) is exerted on the composite material in a direction normal to the selected thin layer. During a short-circuit, it is believed that adiabatic resistive heating of this selected thin layer is followed by rapid thermal expansion which leads to either a partial or complete physical separation of the current limiting device at the selected thin layer which produces a higher over-all device resistance to electric current flow. Thus the current limiting device limits the flow of current through the short-circuited current path. When the short-circuit is cleared, the current limiting device regains its low resistance state allowing electrical current to flow normally. The current limiting of the present invention is reusable for many such short circuit conditions.

8. 发明授权

EP0260514B1 Photoselective metal deposition process 失效
标题翻译：光电选择性金属沉积工艺
公开(公告)号：EP0260514B1
公开(公告)日：1991-06-19
申请号：EP87112662.9
申请日：1987-08-31
申请人： GENERAL ELECTRIC COMPANY
发明人： Cole, Herbert Stanley, Jr. , Liu, Yung Sheng , Sitnik, Theresa Ann , Levinson, Lionel Monty
IPC分类号： C23C18/16
CPC分类号： C23C18/1605 , C23C18/1608 , C23C18/182 , C23C18/1831 , C23C18/1868 , C23C18/1879 , C23C18/204 , C23C18/206 , C23C18/30 , C23C18/31 , H05K3/0017 , H05K3/184 , H05K2203/0565 , H05K2203/0577 , H05K2203/107 , H05K2203/1415

9. 发明公开

EP0762439A2 Current limiting device 失效
标题翻译：限流装置
公开(公告)号：EP0762439A2
公开(公告)日：1997-03-12
申请号：EP96304363.3
申请日：1996-06-11
申请人： GENERAL ELECTRIC COMPANY
发明人： Duggal, Anil Raj , Patchen, Harold Jay , Levinson, Lionel Monty , Lewis, Larry Neil
IPC分类号： H01C7/12
CPC分类号： H01H9/465 , H01C7/027 , H01C7/12 , H01H2033/163 , H02H9/026
摘要： A current limiting device utilizing an electrically conductive composite material and an inhomogeneous distribution of resistance structure is disclosed. The inhomogeneous distribution is typically chosen so that at least one selected thin layer of the current limiting device has much higher resistance than the rest of the current limiting device. In the actual device, pressure (P) is exerted on the composite material in a direction normal to the selected thin layer. During a short-circuit, it is believed that adiabatic resistive heating of this selected thin layer is followed by rapid thermal expansion which leads to either a partial or complete physical separation of the current limiting device at the selected thin layer which produces a higher over-all device resistance to electric current flow. Thus the current limiting device limits the flow of current through the short-circuited current path. When the short-circuit is cleared, the current limiting device regains its low resistance state allowing electrical current to flow normally. The current limiting of the present invention is reusable for many such short circuit conditions.
摘要翻译：公开了一种利用导电复合材料和电阻结构的不均匀分布的限流装置。通常选择非均匀分布，使得限流装置的至少一个选定薄层具有比限流装置的其余部分高得多的电阻。在实际的装置中，压力（P）在垂直于所选薄层的方向上施加在复合材料上。在短路期间，认为该选择的薄层的绝热电阻加热之后是快速热膨胀，这导致限流装置在所选薄层处的部分或完全物理分离，所有器件对电流的阻抗。因此限流装置限制了通过短路电流路径的电流流动。当短路清除后，限流装置恢复其低阻状态，允许电流正常流动。本发明的电流限制对许多这种短路状况是可重复使用的。

10. 发明公开

EP0645476A2 Solid state thermal conversion of polycrystalline alumina to sapphire 失效
标题翻译： Thermische Feststoff-Umwandlung von polykristallinem Aluminiumoxid in einen Saphir。
公开(公告)号：EP0645476A2
公开(公告)日：1995-03-29
申请号：EP94306449.3
申请日：1994-09-01
申请人： GENERAL ELECTRIC COMPANY
发明人： Scott, Curtis Edward , Levinson, Lionel Monty , Maxwell, Randolph E. , Kaliszewski, Mary Sue
IPC分类号： C30B29/20 , C30B1/02
CPC分类号： C30B1/02 , C30B29/20
摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100°C but below 2050°C, the melting point of alumina.
摘要翻译：通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度，已经实现了将致密多晶陶瓷体大量转化成单晶体的固态方法。由于该方法是固态工艺，因此不需要熔化陶瓷体以将其转化为单晶。该方法已被用于通过将PCA加热至高于1100℃但低于2050℃的温度将氧化铝含量低于100wppm的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），氧化铝的熔点。

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