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1. 发明专利

JP2011011201A Carbon-based solid acid and method for producing the same 有权
标题翻译：碳基固体酸及其制造方法
公开(公告)号：JP2011011201A
公开(公告)日：2011-01-20
申请号：JP2009210531
申请日：2009-09-11
申请人： Futamura Chemical Co Ltd , Kanagawa Acad Of Sci & Technol , Nisso Engineering Co Ltd , Tokyo Institute Of Technology , フタムラ化学株式会社 , 国立大学法人東京工業大学 , 日曹エンジニアリング株式会社 , 財団法人神奈川科学技術アカデミー
发明人： KITANO MASAAKI , HARA YUKIKAZU , KODAMA ATSUSHI , KOSAKA TSUTOMU , ISHIKAWA TAKAHIRO , SUDO TOSHIYUKI , IWAKOSHI MARI , YONETANI AKIRA
IPC分类号： B01J31/26 , B01J31/02 , B01J35/10 , B01J37/08 , C07C309/28 , C07C309/62
摘要： PROBLEM TO BE SOLVED: To provide a carbon-based solid acid capable of being produced from raw materials which can be obtained at low prices and are suitable for mass production and to provide a method for producing the carbon-based solid acid, which satisfies preparation conditions suitable for producing the carbon-based solid acid and the efficiency of which is made higher than that of a method for producing the carbon-based solid acid by a reaction using strong sulfuric acid or fuming sulfuric acid.SOLUTION: The carbon-based solid acid includes porous carbon into which a sulfonate group is introduced and which has 3-1,600 m/g BET specific surface area to be defined below. The amount of the sulfonate group in the porous carbon is ≥0.2 mmol/g. The porous carbon is sulfonated by bringing sulfur trioxide or a sulfur trioxide-containing sulfonating agent into contact with a cellulose-containing raw material or a vegetable raw material. Otherwise, the porous carbon is sulfonated by impregnating the vegetable raw material with zinc chloride or phosphoric acid, heating and preliminarily carbonating the raw material thus impregnated, and heating and sulfonating the preliminarily-carbonated raw material in strong sulfuric acid or fuming sulfuric acid or in the gas or liquid of sulfur trioxide.
摘要翻译：要解决的问题：提供能够以低价格获得并适合于批量生产的原料生产的碳基固体酸，并提供满足制备的碳基固体酸的制备方法适用于生产碳基固体酸的条件，其效率高于通过使用强硫酸或发烟硫酸的反应生产碳基固体酸的方法。条件：碳基固体酸包括其中引入磺酸盐基团的多孔碳，其具有下面定义的3-1,600m 2 / g BET比表面积。多孔碳中磺酸盐基团的量为≥0.2mmol/ g。通过使三氧化硫或含三氧化硫的磺化剂与含纤维素的原料或植物原料接触来将多孔碳磺化。另外，通过用氯化锌或磷酸浸渍植物原料来对多孔碳进行磺化，对浸渍的原料进行加热并预先碳酸化，并将预先碳酸化的原料在强硫酸或发烟硫酸或三氧化硫的气体或液体。

2. 发明专利

JP2011104554A Microreactor 审中-公开
标题翻译：微反应器
公开(公告)号：JP2011104554A
公开(公告)日：2011-06-02
申请号：JP2009264611
申请日：2009-11-20
申请人： Nisso Engineering Co Ltd , 日曹エンジニアリング株式会社
发明人： YONETANI AKIRA
IPC分类号： B01J19/00 , B81B1/00
摘要： PROBLEM TO BE SOLVED: To put a heat exchanger part side by side without drastically modifying the structure of conventional microreactors. SOLUTION: In a microreactor including a laminate 2 of a plurality of plates 10, 11 in which flow passages are formed with holes 10a, 11a and grooves formed between the plates and/or in the plates, the laminate 2 includes through-holes 10b, 11b for positioning installed through the plates, and a heat-coolant flow passage is formed for heating or cooling a fluid introduced into the flow passage by using the though-holes. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：将热交换器部分并排放置，而不会显着改变常规微反应器的结构。解决方案：在包括多个板10,11的层叠体2的微反应器中，流动通道形成有孔10a，11a和在板和/或板之间形成的槽，层压体2包括通孔，形成用于通过板安装的定位孔10b，11b，并且形成热量 - 冷却剂流动通道，用于通过使用通孔加热或冷却引入流动通道的流体。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011050936A Flow type tubular reaction apparatus 审中-公开
标题翻译：流式管式反应装置
公开(公告)号：JP2011050936A
公开(公告)日：2011-03-17
申请号：JP2009205201
申请日：2009-09-04
申请人： Nisso Engineering Co Ltd , 日曹エンジニアリング株式会社
发明人： YONETANI AKIRA , UEDA KOJI
IPC分类号： B01J19/00 , B01F5/00 , B01J19/24 , B81B1/00
CPC分类号： B01J19/1812 , B01F5/0644 , B01F5/0645 , B01J19/006 , B01J2219/0077 , B01J2219/00772
摘要： PROBLEM TO BE SOLVED: To provide a flow type tubular reaction apparatus in which a contact area between reactive substrates just after merged with each other is increased and the yield of a reaction product is restrained from being deteriorated owing to concentration nonuniformity.
SOLUTION: The flow type tubular reaction apparatus has two or more fluid supply paths 1a, 1b for supplying two or more fluids to be used in a reaction, a reaction flow path 2 (2a, 2b, 2c, 2d) in which fluids are reacted with one another while being circulated, a fluid discharge path 3 for discharging the reaction product, and such a pipeline network that each fluid supply path is connected to an inlet of the reaction flow path to be communicated with each other, the fluid discharge path is connected to an outlet of the reaction flow path to be communicated with each other, and the reaction flow path is arranged so that a plurality of pipelines are branched from one another and merged with one another to the directions non-perpendicular to the longitudinal direction of the reaction flow path.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种流化型管式反应装置，其中刚刚合并之后的反应性基板之间的接触面积增加，并且由于浓度不均匀性，可以抑制反应产物的收率受到劣化。流动型管状反应装置具有两个以上的供给路径1a，1b，用于供给反应中使用的两种以上的流体，反应流路2（2a，2b，2c，2d），其中流体在循环时彼此反应，用于排出反应产物的流体排放路径3以及每个流体供应路径连接到反应流动路径的入口以彼此连通的管道网络，流体排出路径连接到反应流路的出口以彼此连通，并且反应流动路径被布置成使得多个管道彼此分支并且彼此合并到与非垂直于反应流路的纵向。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2003075312A Processing method and processing device before wafer inspection 审中-公开
标题翻译：加工方法和加工方法在进行检测之前
公开(公告)号：JP2003075312A
公开(公告)日：2003-03-12
申请号：JP2001266653
申请日：2001-09-04
申请人： Nisso Engineering Co Ltd , Nse Tekku Kk , エヌエスイー・テック株式会社 , 日曹エンジニアリング株式会社
发明人： HARADA MICHIYUKI , YONETANI AKIRA , KACHI TOSHIMITSU , HORIKI YASUYUKI , NISHIKATA YASUKATSU , NAKAZAWA TAKAO
IPC分类号： G01N1/00 , G01N1/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To improve inspection accuracy and workability by facilitating automation of a manual operation and by allowing a naturally oxidized film on the surface of a wafer to be surely and efficiently taken in a hydrofluoric acid droplet dropped at the same time.
SOLUTION: This processing method and this processing device are used when a hydrofluoric acid is dropped on the surface of a silicon wafer 7 to dissolve and take the naturally oxidized film 7b on the silicon wafer surface in the dropped droplet S, and the droplet S2 is recovered as a sample for measuring the degree of pollution of the silicon wafer. They are provided at least with a droplet dropping means 44 for automatically dropping the hydrofluoric acid droplet S on the silicon wafer surface, a droplet detection means 40 for detecting the position of the droplet S2 after being dropped and moved on the silicon wafer surface, and a jig 60 capable of catching the detected droplet S2 and of sucking and collecting it inside. The jig 60 is movably controlled based on a detection signal of the detection means 40 and catches the detected droplet S2. The droplet can be recovered by sucking and collecting it in the jig 60 after the silicon wafer surface is stroked by the droplet S2.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过促进手动操作的自动化以及允许在晶片表面上的自然氧化膜可靠地有效地吸收在同时滴下的氢氟酸液滴中来提高检查精度和可加工性。解决方案：当在硅晶片7的表面上滴加氢氟酸以在滴下的液滴S中溶解并取出硅晶片表面上的自然氧化膜7b时使用该处理方法和该处理装置，并且液滴S2为作为测量硅晶片污染程度的样品回收。它们至少设置有用于自动滴落硅晶片表面上的氢氟酸液滴S的液滴滴落装置44，用于在硅晶片表面上下落和移动之后检测液滴S2的位置的液滴检测装置40，以及夹具60能够捕捉检测到的液滴S2并将其收集并收集在其内部。夹具60基于检测装置40的检测信号可动地控制，并且捕捉检测到的液滴S2。通过在硅晶片表面被液滴S2击打之后，通过将其吸收并收集在夹具60中来回收液滴。

5. 发明专利

JP2013208619A Microreactor 审中-公开
标题翻译： MICROREACTOR
公开(公告)号：JP2013208619A
公开(公告)日：2013-10-10
申请号：JP2013130914
申请日：2013-06-21
申请人： Nisso Engineering Co Ltd , 日曹エンジニアリング株式会社
发明人： YONETANI AKIRA
IPC分类号： B01J19/00 , B81B1/00 , G01N35/00 , G01N37/00
摘要： PROBLEM TO BE SOLVED: To dispose a heat exchanger part side by side without drastically modifying the structure of conventional microreactors.SOLUTION: A microreactor includes a laminate 2 in which a plurality of plates 10, 11 are laminated, and the laminate forms passages by holes 10a, 11a and grooves formed between the plates and/or in the plates. The laminate 2 includes through-holes 10b, 11b for positioning provided at each plate, and forms a heating/cooling medium flow path for heating or cooling a fluid introduced into the flow path by using the through-holes. The laminate 2 has a fixing plate material 13 arranged at both ends, and the plates are superposed with each other by clamping the fixing plate materials with each other by means of a clamping tool such as a bolt and a nut in the approaching direction.
摘要翻译：要解决的问题：并排设置热交换器部分，而不会显着改变常规微反应器的结构。微反应器包括层压体2，其中多个板10,11层压，层压板通过孔 10a和11a以及形成在板和/或板之间的槽。层叠体2包括用于定位在每个板上的通孔10b，11b，并且通过使用通孔形成用于加热或冷却引入流路的流体的加热/冷却介质流动路径。层压体2具有设置在两端的固定板材料13，并且通过诸如螺栓和螺母的夹紧工具在接近方向上夹紧固定板材料，彼此重叠。

6. 发明专利

JP2011050937A Circulation type tubular reaction apparatus 审中-公开
标题翻译：循环式管式反应装置
公开(公告)号：JP2011050937A
公开(公告)日：2011-03-17
申请号：JP2009205202
申请日：2009-09-04
申请人： Nisso Engineering Co Ltd , 日曹エンジニアリング株式会社
发明人： YONETANI AKIRA
IPC分类号： B01J19/10 , B01F11/02
CPC分类号： B01J19/10 , B01F5/0057 , B01F11/0258 , B01F15/065 , B01J19/0093 , B01J19/1812 , B01J2219/00094 , B01J2219/00792 , B01J2219/00797 , B01J2219/00822 , B01J2219/0086 , B01J2219/00873 , B01J2219/00889 , B01J2219/00894 , B01J2219/00932
摘要： PROBLEM TO BE SOLVED: To provide a circulation type tubular reaction apparatus in which a contact area between reactive substrates just after merged with each other is increased and the yield of a reaction product is restrained from being deteriorated owing to concentration nonuniformity.
SOLUTION: The circulation type tubular reaction apparatus has: a plurality of inflow paths 1a, 1b into which two or more fluids to be used in a reaction are made respectively to flow; a reaction tube 2 having a lumen in which fluids are merged with each other and merged fluids are reacted with each other while being circulated; an outflow path 3 for making the reaction product flow out of the reaction tube; and a bar-shaped ultrasonic radiator arranged in a merged part in the lumen in the reaction tube. Each inflow path and the outflow path are connected respectively to the reaction tube so that a lumen thereof is communicated with the lumen of the reaction tube. The fluid passing through the lumen of the reaction tube is irradiated with the ultrasonic wave emitted from the bar-shaped ultrasonic radiator 4.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种循环式管式反应装置，其中刚刚合并之后的反应性基板之间的接触面积增加，并且由于浓度不均匀性，可以抑制反应产物的收率受到劣化。解决方案：循环式管式反应装置具有：多个流入路径1a，1b，其中分别使用两种或更多种用于反应的流体流动; 具有流体彼此合并并且流体合流的内腔的反应管2在循环的同时彼此反应; 用于使反应产物流出反应管的流出路径3; 以及布置在反应管内腔中的合并部分中的棒状超声波辐射器。每个流入路径和流出路径分别连接到反应管，使得其内腔与反应管的内腔连通。通过反应管的内腔的液体被从棒状超声波散热器4发射的超声波照射。（C）2011，JPO＆INPIT

7. 发明专利

JP2009286059A Micro chemical plant and its manufacturing method 有权
标题翻译：微型化工厂及其制造方法
公开(公告)号：JP2009286059A
公开(公告)日：2009-12-10
申请号：JP2008143272
申请日：2008-05-30
申请人： Nisso Engineering Co Ltd , 日曹エンジニアリング株式会社
发明人： YAMADA HIROYUKI , YONETANI AKIRA
IPC分类号： B29C67/00 , B01J19/00 , B81C99/00 , G01N37/00
摘要： PROBLEM TO BE SOLVED: To provide a configuration having highly precise channel spaces, excellent particularly in chemical resistance, easily manufactured and excelling in mass productivity.
SOLUTION: The method for manufacturing a micro chemical plant having channels disposed on a base material excellent in chemical resistance comprises: a preliminary molding step where resin powder is used as a base material to compress the powder with a core 11 disposed in the resin powder; and a sintering and core removal step where the compressed body 1 obtained in the former preliminary molding step is fired, and simultaneously the core is decomposed with heat at firing to be removed from the obtained sintered body 1A so as to form the channel 11a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有高度精确的通道空间，特别是耐化学性优异的结构，容易制造和优异的批量生产率。解决方案：具有设置在耐化学性优异的基材上的通道的微型化学设备的制造方法包括：预成型步骤，其中使用树脂粉末作为基材，用设置在树脂粉; 以及烧结和除芯步骤，其中在前一预成型步骤中获得的压缩体1烧制，同时芯在焙烧时被热分解，以从所获得的烧结体1A中除去以形成通道11a。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2001060574A SEMICONDUCTOR WAFER CLEANING SYSTEM 失效
公开(公告)号：JP2001060574A
公开(公告)日：2001-03-06
申请号：JP23485599
申请日：1999-08-23
申请人： NISSO ENGINEERING CO LTD
发明人： HARADA MICHIYUKI , HORIKI YASUYUKI , YONETANI AKIRA , SHIOTANI HIRONORI
IPC分类号： B08B5/02 , B08B3/02 , B08B3/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To enable a semiconductor wafer cleaning system to clean and dry semiconductor wafers, while isolating the wafers from the atmosphere by improving the cleaning effect of the device by bringing plates closer to the surfaces of a wafer to be cleaned, while a fluid is jetted from ejectors. SOLUTION: When wafers 5 to be cleaned are taken out one by one from a wafer supplying section 10A, by means of a wafer transfer means 6 and the presence of one wafer 5 is confirmed from the light made incident to a light receiver 19b from a light emitter 19a, pure water is jetted from a fluid ejector 11a through a fluid supplying port A and an upper plate 1 and is brought closer to the wafer 5 by means of a plate moving means 3 until the wafer 5 is sucked to the internal surface of the plate 1 by Bernoulli effect. Thereafter, the wafer 5 is accurately positioned and brought closer to a lower plate 2, until the distance between the wafer 5 and plate 2 becomes a preset value together with the upper plate 1, while the pure water is jetted from a fluid ejector 12a through another fluid supplying port B and the wafer 5 is held in a state that the wafer 5 is sucked from both the top and bottom sides. Under this condition, the upper and lower surfaces of the wafer 5 are simultaneously cleaned by jetting a liquid chemical upon the surfaces from the ejectors 11a and 12a.

9. 发明专利

JP2002353183A WAFER-CLEANING DEVICE 失效
公开(公告)号：JP2002353183A
公开(公告)日：2002-12-06
申请号：JP2001158580
申请日：2001-05-28
申请人： NISSO ENGINEERING CO LTD
发明人： HARADA MICHIYUKI , NISHIKATA YASUKATSU , SAWAURA MITSUO , KAWASHIMA TSUTOMU , SUNADA HIRONOBU , YONETANI AKIRA , KACHI TOSHIMITSU , HORIKI YASUYUKI
IPC分类号： B08B1/04 , B08B3/02 , B08B3/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To improve cleaning efficiency by controlling the brush contact pressure in a cleaning device on the basis of the rotation speed of a wafer. SOLUTION: In a wafer-cleaning device provided with a plurality of rotary rollers 1 rotating the wafer W, while holding it, two rotary brushes 2 capable of clamping the wafer W held by the rotary rollers 1 from front and back surfaces and a liquid supply means 3 supplying cleaning liquid to the rotary rollers 1 and the rotary brushes 2, a measuring means 4 measuring the rotation speed of the wafer W, without contacting and an interval adjusting means 5 changing the interval of the rotary brushes 2A and 2B are provided. Also, the interval adjusting means 5 is operated, corresponding to the rotation speed of the wafer W measured by the measuring means 4 and the contact pressure to the wafer W of the rotary brushes 2A and 2B is controlled.

10. 发明专利

JP2002093764A CLEANING EQUIPMENT OF WAFER 失效
公开(公告)号：JP2002093764A
公开(公告)日：2002-03-29
申请号：JP2000274592
申请日：2000-09-11
申请人： NISSO ENGINEERING CO LTD
发明人： HARADA MICHIYUKI , MIYAKOSHI EIICHI , MORISHIMA KATSUYUKI , YONETANI AKIRA , NISHIKATA YASUKATSU , KACHI TOSHIMITSU , NAKAZAWA TAKAO
IPC分类号： B08B3/10 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To clean wafers more efficiently while dealing with sudden occurrence of abnormality by solving the problems of a prior art QCR bath. SOLUTION: In the cleaning equipment of wafer being used in semiconductor production process, a rinse bath 1 comprises punching side boards 7a and 7b disposed between the opposite sidewalls 3a and 3b while spaced apart from each other. A pair of liquid introducing sections 10a and 10b extending vertically through the bath are formed between the sidewalls 3a and 3b corresponding to the punching side boards 7a and 7b. Cleaning liquid is introduced to the liquid introducing sections 10a and 10b from lower supply ports 4a and 4b and introduced through the holes of the punching side boards 7a and 7b into a bath cleaning section 1A.

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