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1. 发明专利

JP2013053329A Electroless plating pretreatment composition for forming film 有权
标题翻译：用于形成薄膜的电镀镀层预处理组合物
公开(公告)号：JP2013053329A
公开(公告)日：2013-03-21
申请号：JP2011191486
申请日：2011-09-02
申请人： Osaka Municipal Technical Research Institute , 地方独立行政法人大阪市立工業研究所 , Okuno Chemical Industries Co Ltd , 奥野製薬工業株式会社 , Fuso Chemical Co Ltd , 扶桑化学工業株式会社
发明人： TAMAI SATOYUKI , MATSUKAWA KOYO , FUJIWARA YUTAKA , KOBAYASHI YASUYUKI , WATASE SEIJI , WATANABE MITSURU , OTSUKA KUNIAKI , UBUICHI MORIHIRO , NAKANAGA AKIRA
IPC分类号： C23C18/18
摘要： PROBLEM TO BE SOLVED: To provide a composition useful for electroless plating pretreatment that can form a metal film having a high adhesiveness by a simple method even on a smooth surface of a plastic film, and to provide an electroless plating method using the composition.SOLUTION: The electroless plating pretreatment composition for forming a film contains: a monomer component including a multifunctional acrylic compound; a metallic compound that can generate metal fine particles by reduction; an azo-based radical polymerization initiator; and a hydrophobicity organic solvent dispersion liquid formed of silica fine particles whose surface is modified with an acryl group-containing silane coupling agent.
摘要翻译：要解决的问题：为了提供一种可用于化学镀预处理的组合物，即使在塑料薄膜的光滑表面上也可以通过简单的方法形成具有高粘合性的金属膜，并且提供使用该方法的化学镀方法组成。解决方案：用于形成膜的化学镀预处理组合物包含：包含多官能丙烯酸化合物的单体组分; 可通过还原产生金属微粒的金属化合物; 偶氮系自由基聚合引发剂; 和由表面用含丙烯酰基的硅烷偶联剂改性的二氧化硅微粒形成的疏水性有机溶剂分散液。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2014001290A Method of producing polystyrene particles having positive zeta potential 审中-公开
标题翻译：生产具有正极ZETA潜能的聚苯乙烯颗粒的方法
公开(公告)号：JP2014001290A
公开(公告)日：2014-01-09
申请号：JP2012136569
申请日：2012-06-18
申请人： Hiroshima Univ , 国立大学法人広島大学 , Fuso Chemical Co Ltd , 扶桑化学工業株式会社
发明人： ASEP BAYU DANI NANDIYANTO , OGI TAKASHI , OKUYAMA KIKUO , NAKANAGA AKIRA
IPC分类号： C08F4/00 , C08F12/00
摘要： PROBLEM TO BE SOLVED: To provide a production method for producing polystyrene particles having a positive zeta potential, which can be suitably used in manufacturing hollow inorganic oxide fine particles with suppressed formation of surface holes.SOLUTION: The method of producing polystyrene particles having a positive zeta potential includes polymerization reaction of styrene monomers in a solution containing a cationic initiator, the styrene monomers, and a solvent. The cationic initiator is at least one kind selected from the group consisting of benzoyl peroxide, 2,2'-azobis(isobutyramidine)dihydrochloride, 4,4'-azobis-4-cyanovaleric acid, azobisisobutyronitrile, and 2,2'-azobis(2-methylpropioamide)dihydrochloride.
摘要翻译：要解决的问题：提供一种生产具有正ζ电位的聚苯乙烯颗粒的制造方法，其可以适当地用于制造中空无机氧化物细颗粒，从而抑制形成表面孔。解决方案：制备具有阳性的聚苯乙烯颗粒的方法 ζ电位包括苯乙烯单体在含有阳离子引发剂，苯乙烯单体和溶剂的溶液中的聚合反应。阳离子引发剂是选自过氧化苯甲酰，2,2'-偶氮双（异yr脒）二盐酸盐，4,4'-偶氮双-4-氰基戊酸，偶氮二异丁腈和2,2'-偶氮双（ 2- methylpropioamide）二盐酸盐。

3. 发明专利

JP2005314197A High purity silica sol dispersed in hydrophobic organic solvent and its manufacturing method 有权
标题翻译：在疏水有机溶剂中分散的高纯二氧化硅溶液及其制造方法
公开(公告)号：JP2005314197A
公开(公告)日：2005-11-10
申请号：JP2004151139
申请日：2004-05-21
申请人： Fuso Chemical Co Ltd , 扶桑化学工業株式会社
发明人： KIDA HIROYUKI , YANAGISAWA TAKAO , KUNITOKI HIDEYUKI , NAKANAGA AKIRA
IPC分类号： C01B33/145
摘要： PROBLEM TO BE SOLVED: To provide a high purity silica sol dispersed in a hydrophobic organic solvent stably dispersed in a hydrophobic organic solvent at a high concentration as a raw material for an electronic material, a film material, a polishing agent for an organic surface and the like and its manufacturing method.
SOLUTION: The high purity silica sol dispersed in the hydrophobic organic solvent wherein fine silica particles are dispersed in the hydrophobic organic solvent is characterized by having a particle diameter of the silica fine particles of 500 nm or less, containing metallic impurities of 1.0 ppm or less, and being stable for a long term even if containing the fine silica particles of more than 20 wt.%.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供分散在稳定分散在高浓度的疏水性有机溶剂中的疏水性有机溶剂中的高纯度二氧化硅溶胶作为电子材料的原料，薄膜材料，用于有机表面等及其制造方法。解决方案：分散在疏水性有机溶剂中的高纯二氧化硅溶胶，其中二氧化硅微粒分散在疏水性有机溶剂中的特征在于，其二氧化硅微粒的粒径为500nm以下，含有金属杂质1.0 ppm以下，即使含有20重量％以上的二氧化硅微粒子，长期稳定。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2004091220A Method for manufacturing high purity silica sol dispersed in hydrophilic organic solvent, high purity silica sol dispersed in hydrophilic organic solvent obtained by the method, method for manufacturing high purity silica sol dispersed in organic solvent, and high purity silica sol dispersed in organic solvent obtained by the method 有权
标题翻译：用于制造在有机溶剂中分散的高纯度二氧化硅溶液的方法，用于制造在有机溶剂中分散的高纯度二氧化硅溶液的方法，以及在有机溶剂中分散的高纯度二氧化硅溶液中分离的有机溶剂中分离的高纯度有机溶剂中的高纯度二氧化硅溶胶方法
公开(公告)号：JP2004091220A
公开(公告)日：2004-03-25
申请号：JP2002251019
申请日：2002-08-29
申请人： Fuso Chemical Co Ltd , 扶桑化学工業株式会社
发明人： KUNITOKI HIDEYUKI , NAKANAGA AKIRA , SAKAI MASATOSHI
IPC分类号： C01B33/145
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing high purity silica sol dispersed in a hydrophilic organic solvent, the sol to be used as a raw material for an electronic material, a film material, a polishing material of an organic surface, or the like, requiring high purity, and to prepare a high purity silica sol dispersed in the hydrophilic organic solvent obtained by the method, to provide a method for manufacturing high purity silica sol dispersed in an organic solvent, and to prepare high purity silica sol dispersed in the organic solvent obtained by the method.
SOLUTION: The method for manufacturing the high purity silica sol dispersed in the hydrophilic organic solvent includes: (a) a first process of hydrolyzing alkoxisilanes in an alcohol aqueous solution; (b) a second process of concentrating the silica sol solution obtained by the hydrolysis; (c) a third process of adding a silane coupling agent for coupling treatment and then controlling the pH of the silica sol solution to neutral; and (d) a fourth process of substituting the hydrophilic organic solvent for the water content in the silica solution.
COPYRIGHT: (C)2004,JPO
摘要翻译：待解决的问题：为了提供分散在亲水性有机溶剂中的高纯度二氧化硅溶胶的制造方法，可以使用作为电子材料原料的膜，薄膜材料，有机表面的研磨材料等，需要高纯度，并制备分散在通过该方法获得的亲水性有机溶剂中的高纯度二氧化硅溶胶，以提供分散在有机溶剂中的制备高纯度二氧化硅溶胶的方法，并制备高纯度二氧化硅溶胶分散在通过该方法获得的有机溶剂中。解决方案：分散在亲水性有机溶剂中的制备高纯度二氧化硅溶胶的方法包括：（a）在醇水溶液中水解烷氧基硅烷的第一种方法; （b）浓缩通过水解获得的二氧化硅溶胶溶液的第二种方法; （c）添加用于偶联处理的硅烷偶联剂，然后将二氧化硅溶胶溶液的pH控制为中性的第三种方法; 和（d）用亲水性有机溶剂代替二氧化硅溶液中含水量的第四种方法。版权所有（C）2004，JPO

5. 发明专利

JP2014094867A Method of producing hollow silica particle 审中-公开
标题翻译：生产中空二氧化硅颗粒的方法
公开(公告)号：JP2014094867A
公开(公告)日：2014-05-22
申请号：JP2012248245
申请日：2012-11-12
申请人： Hiroshima Univ , 国立大学法人広島大学 , Fuso Chemical Co Ltd , 扶桑化学工業株式会社
发明人： ASEP BAYU DANI NANDIYANTO , OGI TAKASHI , OKUYAMA KIKUO , NAKANAGA AKIRA
IPC分类号： C01B33/18
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a silica particle which enables producing a hollow silica particle easily and controlling the particle sizes of the hollow silica particles obtained and the thickness of silica in ranges suitable for high-functional materials.SOLUTION: A method of producing a hollow silica particle includes a step (1) of adding polystyrene particles having a positive zeta potential, tetraalkoxysilane and a basic amino acid to a solvent and stirring to prepare a solution, thereby forming core/shell particles with a polystyrene particle as the core and the silica coated on the polystyrene particle as the shell in the solution, and a step (2) of removing the polystyrene particle by decomposing thermally the polystyrene particle serving as the core of the core/shell particle.
摘要翻译：要解决的问题：提供一种能够容易地制造中空二氧化硅颗粒并控制所获得的中空二氧化硅颗粒的颗粒尺寸和二氧化硅的厚度的二氧化硅颗粒的制造方法，其范围适用于高功能材料。解决方案：A 制备中空二氧化硅颗粒的方法包括将具有正ζ电位的聚苯乙烯颗粒，四烷氧基硅烷和碱性氨基酸添加到溶剂中并搅拌以制备溶液的步骤（1），从而形成具有聚苯乙烯颗粒的核/壳颗粒作为所述芯体和所述二氧化硅被涂覆在所述溶液中的所述聚苯乙烯粒子上;以及步骤（2），通过使用作为所述核/壳粒子的核心的聚苯乙烯粒子进行热分解来除去所述聚苯乙烯粒子。

6. 发明专利

JP2013239522A Semiconductor diode comprising semiconductor layer containing polysilsesquioxane 审中-公开
标题翻译：包含聚硅氧烷的半导体层的半导体二极管
公开(公告)号：JP2013239522A
公开(公告)日：2013-11-28
申请号：JP2012110612
申请日：2012-05-14
申请人： Osaka Municipal Technical Research Institute , 地方独立行政法人大阪市立工業研究所 , Fuso Chemical Co Ltd , 扶桑化学工業株式会社
发明人： WATASE SEIJI , MATSUKAWA KOYO , WATANABE MITSURU , NAKANAGA AKIRA
IPC分类号： H01L29/861 , H01L21/208 , H01L29/47 , H01L29/868 , H01L29/872 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor diode comprising a semiconductor layer containing polysilsesquioxane, which can remove or relieve difficulties in semiconductor diodes using conventional inorganic or organic material.SOLUTION: The semiconductor diode comprises a semiconductor layer that contains semiconducting polysilsesquioxane represented by the specified general formula (1), where: R are identical or different and each represent hydrogen, an alkyl group or Si; Ra and Rb are identical or different and each represent an organic group; and x and y each represent an arbitrary integer, with x+y equal to the polymerization degree n.
摘要翻译：要解决的问题：提供一种包含聚倍半硅氧烷的半导体层的半导体二极管，其可以消除或减轻使用常规无机或有机材料的半导体二极管的困难。解决方案：半导体二极管包括半导体层，其包含由指定的通式（1），其中：R相同或不同，各自表示氢，烷基或Si; Ra和Rb相同或不同，各自表示有机基团; 并且x和y各自表示任意整数，x + y等于聚合度n。

7. 发明专利

JP2003165718A NON-POROUS SPHERICAL SILICA AND METHOD FOR PRODUCING THE SAME 审中-公开
公开(公告)号：JP2003165718A
公开(公告)日：2003-06-10
申请号：JP2001360595
申请日：2001-11-27
申请人： FUSO CHEMICAL CO LTD
发明人： NAKANAGA AKIRA , KUNITOKI HIDEYUKI , SAKAI MASATOSHI
IPC分类号： C01B33/148
摘要： PROBLEM TO BE SOLVED: To provide a non-porous spherical silica and a method for producing the same having high purity and a substantially same particle size, in which silica fine particles are substantially monodispersed without forming aggregates. SOLUTION: The method for producing the non-porous spherical silica comprises subjecting to surface modification by a surface-modifying agent of a silica fine particle dispersion obtained by hydrolyzing a hydrolyzable silicon compound, and then drying and burning at a temperature of 650-1,100°C before shredding. The non-porous spherical silica has silica fine particles that are substantially monodispersed without forming aggregates and a purity of 99.9% or more and a number average particle size of 0.05-50 μm, and satisfies a relational expression of [S×d 2 /g) as measured by a BET method, and a denotes a number average particles size (μm)). COPYRIGHT: (C)2003,JPO

8. 发明专利

JP2003267722A NONPOROUS SPHERICAL SILICA AND METHOD OF MANUFACTURING IT 审中-公开
公开(公告)号：JP2003267722A
公开(公告)日：2003-09-25
申请号：JP2002067585
申请日：2002-03-12
申请人： FUSO CHEMICAL CO LTD
发明人： NAKANAGA AKIRA , SAKAI MASATOSHI , SEIJI HARUO
IPC分类号： C01B33/18
摘要： PROBLEM TO BE SOLVED: To provide a nonporous spherical silica having a certain particle size distribution, where the maximum particle diameter can be optionally set to a value within a certain range and a nonporous spherical silica having a particle diameter over the said value is not substantially included, and a method of manufacturing the same. SOLUTION: A spherical silica gel formed by a reaction of a hydrolyzable silicon compound with water is separated, dried, sieved by a sieve with ≥250 meshes, and finally fired to give a nonporous spherical silica. In the presence of an organic solvent incompatible with water, a surfactant, and a catalyst, a water-in-oil type emulsion is formed and a hydrolyzable silicon compound and water are reacted to form the silica gel. The resulting silica gel is separated, dried, sieved by a sieve with ≥250 meshes, and finally fired to give a nonporous spherical silica. COPYRIGHT: (C)2003,JPO

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