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    • 5. 发明授权
    • Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film
    • 半导体器件制造方法包括材料氧化膜的多级化学气相沉积
    • US06939760B2
    • 2005-09-06
    • US10609476
    • 2003-07-01
    • Hirofumi FujiokaKenichi KoyanagiHiroyuki Kitamura
    • Hirofumi FujiokaKenichi KoyanagiHiroyuki Kitamura
    • C23C16/44C23C16/40C23C16/455G11C7/00H01L21/02H01L21/205H01L21/316H01L21/8242H01L27/108
    • H01L21/0228C23C16/405C23C16/45553H01L21/02181H01L21/02183H01L21/02189H01L21/31637H01L27/10852H01L28/40
    • There is provided a method for manufacturing a semiconductor device including a capacitor having a lower electrode, an upper electrode and a capacitive insulating film between the lower electrode and the upper electrode on a semiconductor substrate, wherein the capacitive insulating film is formed on the lower electrode over the semiconductor substrate using a chemical vapor deposition method, the method including: a lower electrode forming step of forming the lower electrode on the semiconductor, a dual-stage deposition step including a first stage for introducing a material gas containing a specified metal into a reactor in which the semiconductor substrate is placed and a second stage for subsequently introducing an oxidizing gas into the reactor, and wherein a metal oxide film as an oxide of the specified metal is formed on the lower electrode over the semiconductor substrate, by repeating the dual-stage deposition step two or more times, thereby forming the capacitive insulating film; and an upper electrode forming step of forming the upper electrode on the capacitive insulating film. Thus, it is possible to obtain the capacitive insulating film having good step coverage and a good film quality, without reducing throughput.
    • 提供一种制造半导体器件的方法,该半导体器件包括在半导体衬底上的下电极和上电极之间具有下电极,上电极和电容绝缘膜的电容器,其中电容绝缘膜形成在下电极 在半导体基板上使用化学气相沉积法,该方法包括:在半导体上形成下电极的下电极形成步骤,包括用于将含有特定金属的材料气体引入到第一级的第一级的双级沉积步骤 其中放置半导体衬底的反应器和用于随后将氧化气体引入反应器的第二阶段,并且其中在半导体衬底上的下电极上形成作为特定金属的氧化物的金属氧化物膜, 阶段沉积步骤两次或更多次,从而形成电容绝缘f ; 以及在电容绝缘膜上形成上电极的上电极形成步骤。 因此,可以获得具有良好的台阶覆盖率和良好的膜质量的电容绝缘膜,而不降低生产量。