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1. 发明申请

US20090004540A1 Fuel Cell and Laminate 审中-公开
标题翻译：燃料电池和层压板
公开(公告)号：US20090004540A1
公开(公告)日：2009-01-01
申请号：US12160123
申请日：2007-01-16
申请人： Fumishige Shizuku , Seiji Sano , Takashi Kajiwara , Hiromichi Sato , Yutaka Hotta , Yoshifumi Ohta
发明人： Fumishige Shizuku , Seiji Sano , Takashi Kajiwara , Hiromichi Sato , Yutaka Hotta , Yoshifumi Ohta
IPC分类号： H01M2/08
CPC分类号： H01M8/0273 , H01M8/0267 , H01M8/0271 , H01M8/0276 , H01M8/0284 , H01M8/241 , H01M8/2457 , H01M8/2483 , H01M2008/1095
摘要： In a seal gasket-integrated MEA (45) in which a frame (450) having a sealing part (459) is integrally formed around a membrane-electrode assembly (MEA section 451), a high-rigidity member (458) having higher rigidity than the frame (450) is provide around a frame (450) having relatively low rigidity.
摘要翻译：在其中具有密封部分（459）的框架（450）围绕膜 - 电极组件（MEA部分451）一体形成的密封垫片集成的MEA（45）中，具有较高刚性的高刚性构件（458）比框架（450）围绕具有相对较低刚度的框架（450）提供。

2. 发明授权

US09024311B2 Thin film transistor, method for manufacturing same, active matrix substrate, display panel and display device 有权
标题翻译：薄膜晶体管，制造方法，有源矩阵基板，显示面板和显示装置
公开(公告)号：US09024311B2
公开(公告)日：2015-05-05
申请号：US13379670
申请日：2010-04-06
申请人： Takeshi Hara , Hirohiko Nishiki , Yoshimasa Chikama , Kazuo Nakagawa , Yoshifumi Ohta , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Miyajima , Michiko Takei , Yoshiyuki Harumoto , Hinae Mizuno
发明人： Takeshi Hara , Hirohiko Nishiki , Yoshimasa Chikama , Kazuo Nakagawa , Yoshifumi Ohta , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Miyajima , Yuuji Mizuno , Michiko Takei , Yoshiyuki Harumoto
IPC分类号： H01L29/786 , H01L21/336 , H01L27/12
CPC分类号： H01L27/1288 , H01L27/1225 , H01L29/7869
摘要： The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.
摘要翻译：本发明提供了一种薄膜晶体管，其包括用于电连接信号电极（6a）和漏电极（7a）的氧化物半导体层（4），所述氧化物半导体层由氧化物半导体制成; 以及由选自Ti，Mo，W，Nb，Ta，Cr，氮化物中的至少一种及其合金制成的阻挡层（6b），阻挡层（6b）与信号电极（6a）和氧化物半导体层（4），并且将信号电极（6a）与氧化物半导体层（4）分离。由于这种结构，薄膜晶体管可以在第一电极和沟道层之间形成并保持欧姆接触，从而成为具有良好性能的薄膜晶体管。

3. 发明授权

US08698152B2 Display panel and thin film transistor substrate 有权
标题翻译：显示面板和薄膜晶体管基板
公开(公告)号：US08698152B2
公开(公告)日：2014-04-15
申请号：US13695837
申请日：2011-02-14
申请人： Yoshiyuki Harumoto , Yoshifumi Ohta , Yoshimasa Chikama , Tokuo Yoshida , Masahiko Suzuki , Okifumi Nakagawa , Yoshinobu Miyamoto , Tetsuya Yamashita , Hinae Mizuno
发明人： Yoshiyuki Harumoto , Yoshifumi Ohta , Yuuji Mizuno , Yoshimasa Chikama , Tokuo Yoshida , Masahiko Suzuki , Okifumi Nakagawa , Yoshinobu Miyamoto , Tetsuya Yamashita
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/12
CPC分类号： H01L27/1214 , G02F1/1368 , G02F2201/086 , H01L27/1225 , H01L27/1255 , H01L29/78633
摘要： A display panel (50a) includes a TFT substrate (20a) in which a plurality of TFTs (5a) are provided, a counter substrate (30a) provided to face the TFT substrate (20a), and a display medium layer (40) provided between the TFT substrate (20a) and the counter substrate (30a), a plurality of pixels being provided so that each of the plurality of pixels is associated with a corresponding one of the TFTs (5a), wherein an oxide semiconductor layer (13) is provided in each of the TFTs (5a) as a channel, and an ultraviolet light absorbing layer (22) having a light transmitting property is provided in each of the pixels (P) so as to overlap the oxide semiconductor layer (13).
摘要翻译：显示面板（50a）包括其中设置有多个TFT（5a）的TFT基板（20a），与TFT基板（20a）相对设置的对置基板（30a）和设置在显示介质层（40）在TFT基板（20a）和对置基板（30a）之间，设置多个像素，使得多个像素中的每一个与相应的一个TFT（5a）相关联，其中氧化物半导体层（13）设置在每个TFT（5a）中作为沟道，并且在每个像素（P）中提供具有透光性的紫外光吸收层（22），以与氧化物半导体层（13）重叠。

4. 发明授权

US08592811B2 Active matrix substrate and display panel 有权
标题翻译：有源矩阵基板和显示面板
公开(公告)号：US08592811B2
公开(公告)日：2013-11-26
申请号：US13697106
申请日：2011-02-14
申请人： Masahiko Suzuki , Yoshimasa Chikama , Yoshifumi Ohta , Tokuo Yoshida , Okifumi Nakagawa , Yoshiyuki Harumoto , Yoshinobu Miyamoto , Tetsuya Yamashita , Hinae Mizuno
发明人： Masahiko Suzuki , Yoshimasa Chikama , Yuuji Mizuno , Yoshifumi Ohta , Tokuo Yoshida , Okifumi Nakagawa , Yoshiyuki Harumoto , Yoshinobu Miyamoto , Tetsuya Yamashita
IPC分类号： H01L29/10 , H01L29/12 , H01L27/12 , H01L27/088 , H01L29/06 , H01L23/48 , H01L23/52 , H01L29/40 , G02F1/136
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/1214 , H01L27/1225 , H01L27/1244
摘要： An active matrix substrate (20a) includes a plurality of pixel electrodes (18a) arranged in a matrix, and a plurality of TFTs (5) each connected to a corresponding one of the pixel electrodes (18a), and each including a gate electrode (11a) provided on an insulating substrate (10a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (16a) provided on the gate insulating film (12a) and having a channel region (C) overlapping the gate electrode (11a), and a source electrode (15aa) and a drain electrode (15b) of copper or copper alloy provided on the gate insulating film (12a) and separated from each other by the channel region (C) of the semiconductor layer (16a). The semiconductor layer (16a) is formed of an oxide semiconductor and covers the source electrode (15aa) and the drain electrode (15b).
摘要翻译：有源矩阵基板（20a）包括以矩阵形式布置的多个像素电极（18a）和多个TFT（5），每个TFT（5）分别连接到相应的一个像素电极（18a），并且各自包括栅电极设置在绝缘基板（10a）上的11a），覆盖栅极（11a）的栅极绝缘膜（12a），设置在栅极绝缘膜（12a）上并具有沟道区域（C）的半导体层栅极电极（11a）以及设置在栅极绝缘膜（12a）上的铜或铜合金的源电极（15aa）和漏电极（15b），并通过半导体的沟道区域（C）彼此分离层（16a）。半导体层（16a）由氧化物半导体形成，并覆盖源电极（15aa）和漏电极（15b）。

5. 发明授权

US4401546A Ferromagnetic high speed sputtering apparatus 失效
标题翻译：铁磁高速溅射装置
公开(公告)号：US4401546A
公开(公告)日：1983-08-30
申请号：US361629
申请日：1982-03-25
申请人： Kyuzo Nakamura , Yoshifumi Ohta , Taiki Yamada
发明人： Kyuzo Nakamura , Yoshifumi Ohta , Taiki Yamada
IPC分类号： C23C14/34 , H01J37/34 , C23C15/00
CPC分类号： H01J37/3423 , C23C14/3407 , C23C14/3414 , H01J37/3408 , H01J37/3426
摘要： A ferromagnetic, high-speed sputtering apparatus including an evacuable chamber, a substrate in the chamber, a target of ferromagnetic substance in the chamber facing the substrate, and magnetic field developing means in the chamber on the side of the target opposite the substrate. The target serves as a cathode. The target includes at least two separate segments of ferromagnetic substance which are spaced apart one from another by a gap so that a leakage magnetic field may be produced on the surface of the target facing the substrate. The gap may be less than about 3 mm. Each of the segments can include a ridge portion on the surface facing the substrate. Each ridge portion can have at least one apex and at least one slant surface.
摘要翻译：一种铁磁性高速溅射装置，包括可抽空室，腔室中的基板，朝向基板的室内的铁磁物质的靶，以及位于与基板相对的靶的侧面的腔室中的磁场显影装置。目标作为阴极。靶包括铁磁物质的至少两个分开的片段，它们彼此间隔开一个间隔，使得可以在面向衬底的靶的表面上产生泄漏磁场。间隙可以小于约3mm。每个段可以包括在面向衬底的表面上的脊部分。每个脊部分可以具有至少一个顶点和至少一个倾斜表面。

6. 发明申请

US20120218485A1 ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE 有权
标题翻译：有源矩阵基板和包括其的液晶显示面板以及制造有源矩阵基板的方法
公开(公告)号：US20120218485A1
公开(公告)日：2012-08-30
申请号：US13501534
申请日：2010-07-26
申请人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Hinae Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
发明人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Hinae Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
IPC分类号： G02F1/136 , H01L33/08 , H01L29/786
CPC分类号： H01L27/1255 , G02F1/136213 , G02F2201/40 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines (11b) extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (5), one for each of the pixels, a protective film (16a) covering the TFTs (5), a plurality of pixel electrodes (18a) arranged in a matrix on the protective film (16a) and connected to the respective corresponding TFTs (5), and a plurality of auxiliary capacitors (6), one for each of the pixels. Each of the auxiliary capacitors (6) includes the corresponding capacitor line (11b), the corresponding pixel electrode (18a), and the protective film (16a) between the corresponding capacitor line (11b) and the corresponding pixel electrode (18a).
摘要翻译：有源矩阵基板包括以矩阵形式布置的多个像素，多个电容线（11b），其中像素彼此排列并且彼此平行的方向中的一个方向延伸;多个TFT（5），一个用于每个像素，覆盖TFT（5）的保护膜（16a），在保护膜（16a）上以矩阵布置并连接到相应的TFT（5）的多个像素电极（18a）和多个辅助电容器（6），每个像素一个。每个辅助电容器（6）包括相应的电容器线（11b），对应的像素电极（18a）和相应的电容器线（11b）和相应的像素电极（18a）之间的保护膜（16a）。

7. 发明申请

US20120199891A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120199891A1
公开(公告)日：2012-08-09
申请号：US13499960
申请日：2010-10-04
申请人： Masahiko Suzuki , Hirohiko Nishiki , Yoshimasa Chikama , Yoshifumi Ohta , Tetsuya Aita , Okifumi Nakagawa , Takeshi Hara
发明人： Masahiko Suzuki , Hirohiko Nishiki , Yoshimasa Chikama , Yoshifumi Ohta , Tetsuya Aita , Okifumi Nakagawa , Takeshi Hara
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , G02F1/1368 , H01L29/66969 , H01L29/78606
摘要： A semiconductor device includes: a gate electrode (3) arranged on a substrate (1); a gate insulating layer (5) deposited over the gate electrode (3); an island of an oxide semiconductor layer (7) formed on the gate insulating layer (5) and including a channel region (7c) and first and second contact regions (7s, 7d) located on right- and left-hand sides of the channel region (7c); a source electrode (11) electrically connected to the first contact region (7s); a drain electrode (13) electrically connected to the second contact region (7d); and a protective layer (9) which is arranged on, and in contact with, the oxide semiconductor layer (7). The protective layer (9) covers the channel region (7c) on the surface of the oxide semiconductor layer (7), the sidewalls (7e) thereof located in a channel width direction with respect to the channel region (7c), and other portions (7f) thereof between the channel region (7c) and the sidewalls (7e). As a result, the hysteresis characteristic of a TFT that uses an oxide semiconductor can be improved and its reliability can be increased.
摘要翻译：半导体器件包括：布置在衬底（1）上的栅电极（3）; 沉积在栅电极（3）上的栅极绝缘层（5）; 形成在所述栅极绝缘层（5）上并且包括沟道区（7c）的氧化物半导体层（7）的岛和位于所述沟道的右侧和左侧的第一和第二接触区（7s，7d）区域（7c）; 电连接到第一接触区域（7s）的源电极（11）; 电连接到第二接触区域（7d）的漏电极（13）; 以及设置在所述氧化物半导体层（7）上并与所述氧化物半导体层（7）接触的保护层（9）。保护层（9）覆盖氧化物半导体层（7）的表面上的沟道区域（7c），其侧壁（7e）相对于沟道区域（7c）位于沟道宽度方向，其它部分（7f）之间的沟道区域（7f）。结果，可以提高使用氧化物半导体的TFT的滞后特性，并且可以提高其可靠性。

8. 发明申请

US20120091452A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE 有权
标题翻译：氧化物半导体，薄膜晶体管阵列基板及其制造方法及显示装置
公开(公告)号：US20120091452A1
公开(公告)日：2012-04-19
申请号：US13377824
申请日：2010-03-10
申请人： Yoshifumi Ohta , Go Mori , Hirohiko Nishiki , Yoshimasa Chikama , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Takeshi Hara
发明人： Yoshifumi Ohta , Go Mori , Hirohiko Nishiki , Yoshimasa Chikama , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Takeshi Hara
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/22 , G02F1/1368 , G02F2202/10 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.
摘要翻译：本发明提供一种能够实现具有稳定晶体管特性的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管及其制造方法，以及配备有该薄膜晶体管的显示装置。本发明的氧化物半导体是薄膜晶体管的氧化物半导体。氧化物半导体包括铟，镓，锌和氧作为构成原子，并且氧化物半导体的氧含量为化学计量条件的87％至95％，以原子单位计为100％。

9. 发明授权

US09177974B2 Active matrix substrate and liquid crystal display panel including the same, and method for manufacturing active matrix substrate with gate insulating film not provided where auxiliary capacitor is provided 有权
标题翻译：有源矩阵基板和包括该基板的有源矩阵基板和液晶显示面板的制造方法以及不提供辅助电容器的栅极绝缘膜制造有源矩阵基板的方法
公开(公告)号：US09177974B2
公开(公告)日：2015-11-03
申请号：US13501534
申请日：2010-07-26
申请人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Hinae Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
发明人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuiji Mizuno , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Okifumi Nakagawa , Yoshiyuki Harumoto
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/136 , H01L27/12 , G02F1/1362
CPC分类号： H01L27/1255 , G02F1/136213 , G02F2201/40 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines (11b) extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (5), one for each of the pixels, a protective film (16a) covering the TFTs (5), a plurality of pixel electrodes (18a) arranged in a matrix on the protective film (16a) and connected to the respective corresponding TFTs (5), and a plurality of auxiliary capacitors (6), one for each of the pixels. Each of the auxiliary capacitors (6) includes the corresponding capacitor line (11b), the corresponding pixel electrode (18a), and the protective film (16a) between the corresponding capacitor line (11b) and the corresponding pixel electrode (18a).
摘要翻译：有源矩阵基板包括以矩阵形式布置的多个像素，多个电容线（11b），其中像素彼此排列并且彼此平行的方向中的一个方向延伸;多个TFT（5），一个用于每个像素，覆盖TFT（5）的保护膜（16a），在保护膜（16a）上以矩阵布置并连接到相应的TFT（5）的多个像素电极（18a）和多个辅助电容器（6），每个像素一个。每个辅助电容器（6）包括相应的电容器线（11b），对应的像素电极（18a）和相应的电容器线（11b）和相应的像素电极（18a）之间的保护膜（16a）。

10. 发明授权

US08906739B2 Thin film transistor substrate and method for manufacturing same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08906739B2
公开(公告)日：2014-12-09
申请号：US13582773
申请日：2011-02-09
申请人： Yoshifumi Ohta , Yoshimasa Chikama , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Harumoto
发明人： Yoshifumi Ohta , Yoshimasa Chikama , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Harumoto
IPC分类号： H01L21/336 , H01L29/786 , H01L29/66 , H01L29/49 , H01L29/45 , H01L21/02 , H01L21/477
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02617 , H01L21/477 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A method includes: a step of forming a gate electrode (14) on a substrate (10a); a step of forming a gate insulating film (15) to cover the gate electrode (14), and then forming an In-Ga-Zn-O-based oxide semiconductor layer (16) in which a ratio of In:Ga:Zn in atomic % is 1:1:1 or 4:5:1 on the gate insulating film (15) to overlap the gate electrode (14); a step of forming a source electrode (19a) and a drain electrode (19b) on the oxide semiconductor layer (16) to overlap the gate electrode (14) and to face each other; and a step of performing an annealing process in an atmosphere containing steam (S) on the substrate (10a) provided with the source electrode (19a) and the drain electrode (19b).
摘要翻译：一种方法包括：在衬底（10a）上形成栅极（14）的步骤; 形成覆盖栅电极的栅极绝缘膜（15）的步骤，然后形成In-Ga-Zn-O系氧化物半导体层（16），其中In：Ga：Zn的比率在栅极绝缘膜（15）上的原子％为1：1：1或4：5：1以与栅电极（14）重叠; 在所述氧化物半导体层（16）上形成与所述栅电极（14）重叠并且彼此面对的源电极（19a）和漏电极（19b）的步骤; 以及在设置有源电极（19a）和漏电极（19b）的基板（10a）上的含有蒸汽（S）的气氛中进行退火处理的工序。

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