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1. 发明授权

US06542830B1 Process control system 有权
标题翻译：过程控制系统
公开(公告)号：US06542830B1
公开(公告)日：2003-04-01
申请号：US09142546
申请日：1998-09-10
申请人： Fumio Mizuno , Seiji Isogai , Kenji Watanabe , Yasuhiro Yoshitake , Terushige Asakawa , Yuichi Ohyama , Hidekuni Sugimoto , Seiji Ishikawa , Masataka Shiba , Jun Nakazato , Makoto Ariga , Tetsuji Yokouchi , Toshimitsu Hamada , Ikuo Suzuki , Masami Ikota , Mari Nozoe , Isao Miyazaki , Yoshiharu Shigyo
发明人： Fumio Mizuno , Seiji Isogai , Kenji Watanabe , Yasuhiro Yoshitake , Terushige Asakawa , Yuichi Ohyama , Hidekuni Sugimoto , Seiji Ishikawa , Masataka Shiba , Jun Nakazato , Makoto Ariga , Tetsuji Yokouchi , Toshimitsu Hamada , Ikuo Suzuki , Masami Ikota , Mari Nozoe , Isao Miyazaki , Yoshiharu Shigyo
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G01N21/9501 , G01R31/2894 , G01R33/06 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.
摘要翻译：根据本发明的处理管理系统包括用于检查晶片上的缺陷的检查装置，通过通信网络连接的检查装置，从这些检查装置获得的检查信息和图像信息被收集以构建数据库和图像文件，其中缺陷的定义通过基于检查信息和从检查装置获得的图像信息来表征缺陷的元件的组合来给出。通过给出缺陷的定义，可以细分和知道缺陷的特征。因此，可以研究缺陷的原因。

2. 发明授权

US06757621B2 Process management system 失效
标题翻译：流程管理系统
公开(公告)号：US06757621B2
公开(公告)日：2004-06-29
申请号：US10342871
申请日：2003-01-16
申请人： Fumio Mizuno , Seiji Isogai , Kenji Watanabe , Yasuhiro Yoshitake , Terushige Asakawa , Yuichi Ohyama , Hidekuni Sugimoto , Seiji Ishikawa , Masataka Shiba , Jun Nakazato , Makoto Ariga , Tetsuji Yokouchi , Toshimitsu Hamada , Ikuo Suzuki , Masami Ikota , Mari Nozoe , Isao Miyazaki , Yoshiharu Shigyo
发明人： Fumio Mizuno , Seiji Isogai , Kenji Watanabe , Yasuhiro Yoshitake , Terushige Asakawa , Yuichi Ohyama , Hidekuni Sugimoto , Seiji Ishikawa , Masataka Shiba , Jun Nakazato , Makoto Ariga , Tetsuji Yokouchi , Toshimitsu Hamada , Ikuo Suzuki , Masami Ikota , Mari Nozoe , Isao Miyazaki , Yoshiharu Shigyo
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G01N21/9501 , G01R31/2894 , G01R33/06 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.
摘要翻译：根据本发明的处理管理系统包括用于检查晶片上的缺陷的检查装置，通过通信网络连接的检查装置，从这些检查装置获得的检查信息和图像信息被收集以构建数据库和图像文件，其中缺陷的定义通过基于检查信息和从检查装置获得的图像信息来表征缺陷的元件的组合来给出。通过给出缺陷的定义，可以细分和知道缺陷的特征。因此，可以研究缺陷的原因。

3. 发明授权

US5324953A Reduced-projection exposure system with chromatic aberration correction system including diffractive lens such as holographic lens 失效
$Reduced-projection exposure system with chromatic aberration correction system including diffractive lens such as holographic lens$
标题翻译：具有色差校正系统的减少投影曝光系统，包括全息透镜等衍射透镜
公开(公告)号：US5324953A
公开(公告)日：1994-06-28
申请号：US12775
申请日：1993-02-03
申请人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Yasuhiko Nakayama
发明人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Yasuhiko Nakayama
IPC分类号： G02B5/32 , G02B27/00 , G03F7/23 , G03F9/00 , H01L21/027 , H01L21/30 , G06K7/015
CPC分类号： G03F9/70 , G02B27/0037 , G02B27/4211 , G02B27/4222 , G02B5/32
摘要： A novel exposure system includes a reduced-projection lens optimized for a predetermined single exposure wavelength and a chromatic aberration correction system for TTL (Through The Lens) alignment with broadband light. The correction system includes a holographic lens which dispersion has a negative number in contrast to a conventional glass lens which has a positive dispersion number. By employing a holographic lens, the total optical length of an alignment system can be made short enough to avoid the necessity of installing a mirror therein, thus realizing a highly accurate alignment system.
摘要翻译：一种新颖的曝光系统包括针对预定的单一曝光波长优化的缩小投影透镜和用于与宽带光进行TTL（透镜））对准的色差校正系统。校正系统包括与具有正色散数的常规玻璃透镜相反的色散具有负数的全息透镜。通过采用全息透镜，可以使对准系统的总光学长度足够短以避免在其中安装反射镜，从而实现高精度的对准系统。

4. 发明授权

US06456951B1 Method and apparatus for processing inspection data 有权
标题翻译：检验数据处理方法和装置
公开(公告)号：US06456951B1
公开(公告)日：2002-09-24
申请号：US09553944
申请日：2000-04-21
申请人： Shunji Maeda , Yasuhiro Yoshitake , Kenji Oka , Masataka Shiba , Atsushi Shimoda
发明人： Shunji Maeda , Yasuhiro Yoshitake , Kenji Oka , Masataka Shiba , Atsushi Shimoda
IPC分类号： G06F1132
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention is related to an inspection data processing method for processing inspection data composed of coordinates data and characteristic quantity data about a defect generated on a subject of inspection detected with a visual inspection apparatus. The inspection data processing method comprises the following steps: a preparation step of storing a first fatality judgment data group corresponding to the kinds of areas on the subject of inspection and a second fatality judgment data group corresponding to categories of defects beforehand; a first fatality judgment step of judging a first fatality level of a defect corresponding to the kind of an area where the defect exists; a category giving step of giving category to the defect in the inspection data; and a second fatality judgment step of judging a second fatality of the defect based on second fatality judgment data selected according to the category which are given based on the first fatality level of defects judged in the first fatality judgment step.
摘要翻译：本发明涉及一种用于处理检查数据的检查数据处理方法，该检查数据由关于在用目视检查装置检测到的检查对象上产生的缺陷的坐标数据和特征量数据组成。检查数据处理方法包括以下步骤：预先存储与检查对象的区域的种类对应的第一死亡判定数据组和对应于缺陷类别的第二死亡判定数据组的准备步骤; 判断与存在缺陷的区域的种类相对应的缺陷的第一死亡水平的第一死亡判定步骤; 类别给出检查数据中的缺陷类别的步骤; 以及第二死亡判定步骤，基于根据在第一死亡判定步骤中判断的缺陷的第一死亡水平给出的根据类别选择的第二死亡判定数据来判断缺陷的第二死亡。

5. 发明授权

US4993837A Method and apparatus for pattern detection 失效
标题翻译：模式检测方法和装置
公开(公告)号：US4993837A
公开(公告)日：1991-02-19
申请号：US301962
申请日：1989-01-25
申请人： Yoshitada Oshida , Yasuhiro Yoshitake , Naoto Nakashima , Masataka Shiba
发明人： Yoshitada Oshida , Yasuhiro Yoshitake , Naoto Nakashima , Masataka Shiba
IPC分类号： G01B11/00 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
CPC分类号： G03F9/70
摘要： A method and a system for pattern detection are disclosed in which a laser beam high in directivity is emitted from a laser beam source, the laser beam emitted from the laser beam source is irradiated on an uneven pattern to be detected on an object, the light component of a frequency corresponding to the cut-off frequency of an objective lens is removed from the light reflected from the object when an image of the pattern on the object is formed through an objective lens, the optical image thus formed is received by a photoelectric converting device for producing a signal waveform representing the pattern free of a signal of the frequency corresponding to the cut-off frequency, and the pattern is detected from a signal produced from the photoelectric converting device.
摘要翻译：公开了一种用于图案检测的方法和系统，其中从激光束源发射高方向性的激光束，从激光束源发射的激光束照射在待检测物体上的不均匀图案上，光当通过物镜形成物体上的图案的图像时，从物体反射的光中除去与物镜的截止频率相对应的频率的分量，由此形成的光学图像由光电用于产生表示没有与截止频率相对应的频率的信号的模式的信号波形的转换装置，并且根据从光电转换装置产生的信号检测图案。

6. 发明授权

US06556955B2 Method of determining lethality of defects in circuit pattern inspection, method of selecting defects to be reviewed, and inspection system of circuit patterns involved with the methods 有权
公开(公告)号：US06556955B2
公开(公告)日：2003-04-29
申请号：US10012380
申请日：2001-12-12
申请人： Yasuhiro Yoshitake , Masataka Shiba , Atsushi Shimoda
发明人： Yasuhiro Yoshitake , Masataka Shiba , Atsushi Shimoda
IPC分类号： G06F1116
CPC分类号： H01L22/20 , G01N21/95607 , H01L2924/0002 , H01L2924/00
摘要： A method of reviewing defects on a substrate. The method includes inputting information of defects on a substrate detected by a detection apparatus, identifying cluster of defects detected on the substrate by using the inputted information, selecting defects to be reviewed from the cluster identified, reviewing the selected defects, and classifying the reviewed defects.

7. 发明授权

US06334097B1 Method of determining lethality of defects in circuit pattern inspection method of selecting defects to be reviewed and inspection system of circuit patterns involved with the methods 有权
标题翻译：确定电路图案检查缺陷检测方法的选择方法及其检查方法
公开(公告)号：US06334097B1
公开(公告)日：2001-12-25
申请号：US09225513
申请日：1999-01-06
申请人： Yasuhiro Yoshitake , Masataka Shiba , Atsushi Shimoda
发明人： Yasuhiro Yoshitake , Masataka Shiba , Atsushi Shimoda
IPC分类号： G06F1132
CPC分类号： H01L22/20 , G01N21/95607 , H01L2924/0002 , H01L2924/00
摘要： From the coordinate data of defects detected on the circuit patterns, the areas where the defects belong are identified. The sizes of the defects detected are compared with the data to determine the lethality to thereby determine the lethality of the defects. Further, the severity of the defects is calculated from the sizes of the defects to thereby select the review object in the descending order of the severity. Thereby, when inspecting the circuit patterns on a semiconductor wafer or the like, the lethality of the defects can automatically be determined even though the review is not carried out, enhancing the efficiency of the inspection. To perform the review with efficiency, the defects to be reviewed are automatically selected, while the quality of the inspection itself is maintained.
摘要翻译：根据在电路图案上检测到的缺陷的坐标数据，识别缺陷所在的区域。将检测到的缺陷的大小与数据进行比较以确定致死率，从而确定缺陷的致死率。此外，根据缺陷的大小计算缺陷的严重性，从而以严重性的降序选择检查对象。因此，当检查半导体晶片等上的电路图案时，缺陷的致死性可以即使不进行审查，自动确定，提高检查效率。为了有效地进行审查，将自动选择要检查的缺陷，同时保持检查质量。

8. 发明授权

US4819033A Illumination apparatus for exposure 失效
标题翻译：曝光照明装置
公开(公告)号：US4819033A
公开(公告)日：1989-04-04
申请号：US113514
申请日：1987-10-28
申请人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Naoto Nakashima
发明人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Naoto Nakashima
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , H01S3/101 , H01S3/106 , G03B27/42 , G03B27/72
CPC分类号： G03F7/70558 , G03F7/2006 , G03F7/70041 , G03F7/70058
摘要： An illumination apparatus is disclosed which is suitable for use in a projection/exposure system for projecting an image of a circuit pattern of a reticle on a semiconductor wafer through a projection lens. The illumination apparatus includes an excimer laser for emitting a pulsed laser beam, an optical system for illuminating the reticle with a plurality of laser pulses emitted from the excimer laser so that laser pulses having passed through the reticle impinge on the semiconductor wafer in different directions through the projection lens, and a light intensity control device for controlling the light intensity of each of the laser pulses so that the laser pulses equally contribute to the reaction of a light sensitive material which is provided on the semiconductor wafer, with light.
摘要翻译：公开了一种适用于投影/曝光系统的照明装置，用于通过投影透镜在半导体晶片上投射标线片的电路图案的图像。照明装置包括用于发射脉冲激光束的准分子激光器，用于从准分子激光器发射的多个激光脉冲照射标线片的光学系统，使得已经穿过掩模版的激光脉冲以不同方向穿过半导体晶片投影透镜和用于控制每个激光脉冲的光强度的光强度控制装置，使得激光脉冲同样有助于设置在半导体晶片上的光敏材料与光的反应。

9. 发明授权

US06281024B1 Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device 失效
标题翻译：半导体装置检查分析方法及其装置及半导体装置的制造方法
公开(公告)号：US06281024B1
公开(公告)日：2001-08-28
申请号：US09322149
申请日：1999-05-28
申请人： Yasuhiro Yoshitake , Kenji Watanabe , Yoshimasa Fukushima , Minori Noguchi
发明人： Yasuhiro Yoshitake , Kenji Watanabe , Yoshimasa Fukushima , Minori Noguchi
IPC分类号： H01L2100
CPC分类号： H01L21/67253
摘要： A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.
摘要翻译：检测和/或分析其中检测半导体器件制造线中处理的半导体晶片中的粒子的半导体器件的方法和系统。从检测到的颗粒中选择颗粒，并蚀刻所选择的颗粒以暴露所选择的颗粒的横截面。所选择的粒子的横截面被暴露，其元素被分析，并且在分析之后，半导体晶片在半导体器件制造线中继续被处理。为了蚀刻，产生具有与所选粒子相交的边缘的图案数据，并且通过根据图案数据的光图案使被感光材料涂覆的半导体晶片曝光，使得边缘与所选择的粒子相交。此后，进行蚀刻以暴露所选粒子的横截面并进行分析。

10. 发明授权

US08982332B2 Distance measuring device and distance measuring method 有权
标题翻译：距离测量装置和距离测量方法
公开(公告)号：US08982332B2
公开(公告)日：2015-03-17
申请号：US13518727
申请日：2011-01-28
申请人： Takehiro Tachizaki , Masahiro Watanabe , Tatsuo Hariyama , Yasuhiro Yoshitake , Tetsuya Matsui , Hirokazu Matsumoto , Kiyoshi Takamasu
发明人： Takehiro Tachizaki , Masahiro Watanabe , Tatsuo Hariyama , Yasuhiro Yoshitake , Tetsuya Matsui , Hirokazu Matsumoto , Kiyoshi Takamasu
IPC分类号： G01C3/08 , G01S17/36
CPC分类号： G01S17/36 , G01B9/02003 , G01B9/02007 , G01B9/02008 , G01B9/0207 , G01S7/4815 , G01S7/4911 , G01S17/42
摘要： Disclosed is a distance measuring device using an optical comb. In order for the absolute distance to an object to be measured which has a surface with low reflection ratio or a scattering surface and is approximately 10 m apart, to be easily measured with accuracy of 0.1 mm or more using an optical and contactless method, the distance measuring device which measures the distance to the object to be measured is configured such that the distance to the object to be measured is measured by comparing the phase of the beat signal between a light source and a plurality of CW lasers which are reflected or scattered by the object with the phase of the beat signal between the light source and a plurality of CW lasers prior to being irradiated onto the object.
摘要翻译：公开了使用光梳的距离测量装置。为了使具有低反射率或散射面的表面的测量对象的绝对距离相差10微米，使用光学和非接触方法可以容易地测量精度为0.1mm以上，测量到被测量物体的距离的距离测量装置被配置为通过比较反射或散射的光源和多个CW激光器之间的拍频信号的相位来测量到被测量物体的距离在被照射到物体上之前，通过光源和多个CW激光器之间的拍频信号的相位的对象。

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