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    • 3. 发明授权
    • Digital communication system
    • 数字通讯系统
    • US4807252A
    • 1989-02-21
    • US46787
    • 1987-05-07
    • Fumio IkegamiSusumu YoshidaTsutomu TakeuchiSirikiat Ariyavisitakul
    • Fumio IkegamiSusumu YoshidaTsutomu TakeuchiSirikiat Ariyavisitakul
    • H04L27/18H04L27/20H04L27/233
    • H04L27/2085H04L27/2331
    • The present invention provides a digital communication system in which one time slot is divided into a first half section and a second half section and the carrier phase difference .theta. between each neighboring first half section is set to either (.pi., 0) with respect to a binary information symbol (1,0) or (0, .pi./2, .pi., 3/2.pi.) with respect to a quaternary information symbol (11, 01, 00, 10). In addition, the phase difference .psi. between the first half and the second half of any time slot is a constant value .psi..sub.0 (for example, .pi.rad) irrespective of the symbol, or .psi..sub.i determined with respect to a symbol (for example, +.pi./2 with respect to a symbol 1 or -.pi./2 with respect to a symbol 0). Therefore, an arbitrary complementary characteristic can be obtained when differentially demodulated in a multipath fading channel, irrespective of the amplitude characteristic of a demodulation signal.
    • 本发明提供了一种数字通信系统,其中一个时隙被分成第一半部分和第二半部分,并且每个相邻的前半部分之间的载波相位差θ相对于一个时隙被设置为(pi,0) 二进制信息符号(1,0)或(0,pi / 2,pi,3/2 pi)相对于四元信息符号(11,01,00,10)。 此外,任何时隙的前半部分和后半部分之间的相位差压力值是与符号相关的常数值psi 0(例如,pi rad),或者相对于符号确定的psi i(例如, + pi / 2相对于符号1或-π/ 2相对于符号0)。 因此,无论解调信号的振幅特性如何,都可以在多路径衰落信道中进行差分解调时获得任意的互补特性。
    • 8. 发明授权
    • Magnetic sensor formed of magnetoresistance effect elements
    • 磁传感器由磁阻效应元件形成
    • US07589528B2
    • 2009-09-15
    • US11682841
    • 2007-03-06
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • G01R33/02
    • B82Y25/00B82Y40/00G01R33/09G01R33/093H01F41/302Y10T29/49002Y10T29/49037Y10T428/32
    • On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
    • 在单个芯片上形成有多个磁阻效应元件,该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层,以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后,去除磁场。结果,通过磁场施加磁性层的剩余磁化,所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层,由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。