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1. 发明申请

US20070054398A1 Human salivary gland-origin stem cell 审中-公开
标题翻译：人唾液腺起源干细胞
公开(公告)号：US20070054398A1
公开(公告)日：2007-03-08
申请号：US10546286
申请日：2004-02-20
申请人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
发明人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
IPC分类号： C12N5/08
CPC分类号： C12N5/0672 , A61K35/12 , C12N5/0633 , C12N5/0676 , C12N5/0678 , C12N2501/11 , C12N2501/115 , C12N2501/119 , C12N2501/16 , C12N2501/235 , C12N2501/335 , C12N2506/098
摘要： A novel human stem cell which can be differentiated to cells constituting a plurality of human organs including human liver is disclosed. The human stem cell according to the present invention is originated from human salivary gland, which is CD49f-positive, and which can be differentiated to (1) a nestin-positive and albumin-positive cell, (2) an insulin-positive cell and (3) a glucagon-positive cell by culture in vitro.
摘要翻译：公开了一种可以分化成包括人肝脏在内的多个人体器官的细胞的新型人类干细胞。本发明人干细胞源自人唾液腺，其为CD49f阳性，可分化为（1）巢蛋白阳性和白蛋白阳性细胞，（2）胰岛素阳性细胞和（3）体外培养胰高血糖素阳性细胞。

2. 发明授权

US07659121B2 Human salivary gland-origin stem cell 失效
标题翻译：人唾液腺起源干细胞
公开(公告)号：US07659121B2
公开(公告)日：2010-02-09
申请号：US11902018
申请日：2007-09-18
申请人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
发明人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
IPC分类号： C12N5/00 , C12N15/00
CPC分类号： C12N5/0672 , A61K35/12 , C12N5/0633 , C12N5/0676 , C12N5/0678 , C12N2501/11 , C12N2501/115 , C12N2501/119 , C12N2501/16 , C12N2501/235 , C12N2501/335 , C12N2506/098
摘要： A novel human stem cell which can be differentiated to cells constituting a plurality of human organs including human liver is disclosed. The human stem cell according to the present invention is originated from human salivary gland, which is CD49f-positive, and which can be differentiated to (1) a nestin-positive and albumin-positive cell, (2) an insulin-positive cell and (3) a glucagon-positive cell by culture in vitro.
摘要翻译：公开了一种可以分化成包括人肝脏在内的多个人体器官的细胞的新型人类干细胞。本发明人干细胞源自人唾液腺，其为CD49f阳性，可分化为（1）巢蛋白阳性和白蛋白阳性细胞，（2）胰岛素阳性细胞和（3）体外培养胰高血糖素阳性细胞。

3. 发明申请

US20090068734A1 Human salivary gland-origin stem cell 失效
标题翻译：人唾液腺起源干细胞
公开(公告)号：US20090068734A1
公开(公告)日：2009-03-12
申请号：US11902018
申请日：2007-09-18
申请人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
发明人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
IPC分类号： C12N5/08
CPC分类号： C12N5/0672 , A61K35/12 , C12N5/0633 , C12N5/0676 , C12N5/0678 , C12N2501/11 , C12N2501/115 , C12N2501/119 , C12N2501/16 , C12N2501/235 , C12N2501/335 , C12N2506/098
摘要： A novel human stem cell which can be differentiated to cells constituting a plurality of human organs including human liver is disclosed. The human stem cell according to the present invention is originated from human salivary gland, which is CD49f-positive, and which can be differentiated to (1) a nestin-positive and albumin-positive cell, (2) an insulin-positive cell and (3) a glucagon-positive cell by culture in vitro.
摘要翻译：公开了一种可以分化成包括人肝脏在内的多个人体器官的细胞的新型人类干细胞。本发明人干细胞源自人唾液腺，其为CD49f阳性，可分化为（1）巢蛋白阳性和白蛋白阳性细胞，（2）胰岛素阳性细胞和（3）体外培养胰高血糖素阳性细胞。

4. 发明申请

US20070154463A1 Stem cell originated from salivary gland duct epithelium and use of the same 审中-公开
标题翻译：干细胞起源于唾液腺管上皮细胞和使用相同
公开(公告)号：US20070154463A1
公开(公告)日：2007-07-05
申请号：US11713705
申请日：2007-03-05
申请人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
发明人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
IPC分类号： C12N5/08 , A61K35/407
CPC分类号： C12N5/0633 , A61K35/12 , C12N2501/11 , C12N2501/33 , C12N2501/39
摘要： A stem cell which can be differentiated to a hepatic cell, a pancreas cell or to a salivary gland cell is disclosed. The stem cell according to the present invention is originated from salivary gland duct epithelium, which can be differentiated to an alpha-fetoprotein-positive cell, an albumin-positive cell, an amylase-positive cell, an insulin-positive cell and a glucagon-positive cell by culture in vitro. By transplanting the stem cells according to the present invention, organs such as liver can be regenerated.
摘要翻译：公开了可分化成肝细胞，胰腺细胞或唾液腺细胞的干细胞。根据本发明的干细胞源自唾液腺管上皮，其可分化为甲胎蛋白阳性细胞，白蛋白阳性细胞，淀粉酶阳性细胞，胰岛素阳性细胞和胰高血糖素 - 体外培养阳性细胞。通过移植根据本发明的干细胞，可以再生诸如肝脏的器官。

5. 发明申请

US20050084964A1 Stem cells originating in salivary duet epithelial cells and use thereof 审中-公开
标题翻译：源自唾液二重上皮细胞的干细胞及其用途
公开(公告)号：US20050084964A1
公开(公告)日：2005-04-21
申请号：US10495450
申请日：2002-11-15
申请人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
发明人： Fumio Endo , Kenji Okumura , Kimitoshi Nakamura
IPC分类号： A61K35/12 , A61P1/16 , A61P1/18 , A61P43/00 , C12N5/071 , C12N5/074 , C12N5/08 , A61K45/00
CPC分类号： C12N5/0633 , A61K35/12 , C12N2501/11 , C12N2501/33 , C12N2501/39
摘要： A stem cell which can be differentiated to a hepatic cell, a pancreas cell or to a salivary gland cell is disclosed. The stem cell according to the present invention is originated from salivary gland duct epithelium, which can be differentiated to an alpha-fetoprotein-positive cell, an albumin-positive cell, an amylase-positive cell, an insulin-positive cell and a glucagon-positive cell by culture in vitro. By transplanting the stem cells according to the present invention, organs such as liver can be regenerated.
摘要翻译：公开了可分化成肝细胞，胰腺细胞或唾液腺细胞的干细胞。根据本发明的干细胞源自唾液腺管上皮，其可分化为甲胎蛋白阳性细胞，白蛋白阳性细胞，淀粉酶阳性细胞，胰岛素阳性细胞和胰高血糖素 - 体外培养阳性细胞。通过移植根据本发明的干细胞，可以再生诸如肝脏的器官。

6. 发明授权

US5399199A Apparatus for gas source molecular beam epitaxy 失效
标题翻译：气源分子束外延装置
公开(公告)号：US5399199A
公开(公告)日：1995-03-21
申请号：US44614
申请日：1993-04-09
申请人： Hiromi Kiyama , Kenji Okumura , Hidehiko Oku
发明人： Hiromi Kiyama , Kenji Okumura , Hidehiko Oku
IPC分类号： C30B23/08 , C23C16/44 , C23C16/48 , C30B25/02 , C30B25/10 , C30B25/14 , H01L21/203 , C23C16/00
CPC分类号： C30B25/14 , C23C16/44 , C23C16/481 , C30B25/02 , C30B25/10 , C30B29/04
摘要： This invention relates to an apparatus wherein a vacuum chamber is divided into two spaces, the substrate heating space and the crystal growth space, so that the degree of vacuum in the substrate heating space is set lower than the pressure for the Si growth and the degree of vacuum in the crystal space is set corresponding to the pressure for Si growth to thereby grow Si based semiconductor with excellent reproducibility over a long period. Moreover, heat efficiency toward the substrate is heightened by enclosing the upside and the circumference of the heating means with the heat shielding body to cut energy cost.
摘要翻译：本发明涉及一种真空室被分成两个空间，即基板加热空间和晶体生长空间的装置，使得基板加热空间中的真空度被设定为低于Si生长的压力和程度晶体空间中的真空度对应于Si生长的压力而设定，从而长时间以高的重现性生长Si基半导体。此外，通过用加热屏蔽体封闭加热装置的上侧和周围来降低能量成本来提高朝向基板的热效率。

7. 发明授权

US5252131A Apparatus for gas source molecular beam epitaxy 失效
标题翻译：气源分子束外延装置
公开(公告)号：US5252131A
公开(公告)日：1993-10-12
申请号：US864764
申请日：1992-04-07
申请人： Hiromi Kiyama , Kenji Okumura , Hidehiko Oku
发明人： Hiromi Kiyama , Kenji Okumura , Hidehiko Oku
IPC分类号： C30B23/08 , C23C16/44 , C23C16/48 , C30B25/02 , C30B25/10 , C30B25/14 , H01L21/203 , C23C14/00
CPC分类号： C30B25/14 , C23C16/44 , C23C16/481 , C30B25/02 , C30B25/10 , C30B29/04
摘要： This invention relates to an apparatus wherein a vacuum chamber is divided into two spaces, the substrate heating space and the crystal growth space, so that the degree of vacuum in the substrate heating space is set lower than the pressure for the Si growth and the degree of vacuum in the crystal space is set corresponding to the pressure for Si growth to thereby grow Si based semiconductor with excellent reproducibility over a long period. Moreover, heat efficiency toward the substrate is heightened by enclosing the upside and the circumference of the heating means with the heat shielding body to cut energy cost.

8. 发明授权

US4979465A Apparatus for producing semiconductors 失效
标题翻译：半导体制造装置
公开(公告)号：US4979465A
公开(公告)日：1990-12-25
申请号：US457140
申请日：1989-12-26
申请人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
发明人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45591 , C30B25/14
摘要： The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

9. 发明授权

US06431667B1 Structure for mounting and dismounting an equipment unit 有权
标题翻译：用于安装和拆卸设备单元的结构
公开(公告)号：US06431667B1
公开(公告)日：2002-08-13
申请号：US09444289
申请日：1999-11-22
申请人： Kenji Okumura
发明人： Kenji Okumura
IPC分类号： E05B6546
CPC分类号： G06F1/184 , G06F1/187
摘要： In a structure for mounting and dismounting an equipment unit from an apparatus body including a plate-like frame formed with a slot at a preselected end and a bore contiguous with the slot for receiving the equipment unit via the slot, the equipment unit includes a front panel and a pair of mounting members. The mounting members are positioned at opposite sides of the front panel, and each contacts, when the equipment unit is received in the apparatus body, the inner periphery of the frame at one end and is exposed to the outside of apparatus body at the other end. The mounting members each are rotatable in a direction in which the equipment unit is inserted into the apparatus body.
摘要翻译：在用于将设备单元从设备本体安装和拆卸的结构中，所述设备主体包括在预选端形成有槽的板状框架和与所述槽相邻的孔，用于经由所述槽接收所述设备单元，所述设备单元包括前部面板和一对安装构件。安装构件位于前面板的相对侧，并且当设备单元被容纳在设备主体中时，每个接触件在一端处在框架的内周边并且在另一端暴露于设备主体的外部。安装构件各自可以在设备单元插入设备主体的方向上旋转。

10. 发明授权

US5118642A Method for producing semiconductors 失效
标题翻译：半导体制造方法
公开(公告)号：US5118642A
公开(公告)日：1992-06-02
申请号：US645441
申请日：1991-01-24
申请人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
发明人： Akira Yoshino , Kenji Okumura , Yoshinori Ohmori , Toshiharu Ohnishi
IPC分类号： C30B25/14
CPC分类号： C30B25/14 , Y10S117/902 , Y10S148/056
摘要： A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.
摘要翻译：将反应气体供给到分散室，该分散室设置在反应室下方，并且都设置在真空室内。反应物气体被分散，然后通过多个连通孔进入反应室。第二反应气体被供给到下分散室。分散后，该第二气体通过管道通过第一分散室进料并进入第一反应气体周围的反应室。所述第一反应气体从所述进料管的端部开口向下吹出，并沿着所述套环部分平行分散并均匀地分散在所述第一反应气体分散室中，并且在所述状态下，通过所述连通孔引入所述反应室。

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