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1. 发明授权

US08901640B2 Semiconductor element and semiconductor device 有权
标题翻译：半导体元件和半导体器件
公开(公告)号：US08901640B2
公开(公告)日：2014-12-02
申请号：US12944310
申请日：2010-11-11
申请人： Fujio Masuoka , Tomohiko Kudo
发明人： Fujio Masuoka , Tomohiko Kudo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/78 , H01L21/8234 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L29/7827 , H01L21/823431 , H01L29/0657 , H01L29/42356 , H01L29/42364 , H01L29/42372 , H01L29/42392 , H01L29/66666 , H01L29/78642
摘要： The object of the invention is to provide a semiconductor device realizing high-speed operation of surrounding gate transistors (SGTs), which are three-dimensional semiconductors, by increasing the ON current of the SGTs. This object is achieved by a semiconductor element being provided in which a source, a drain and a gate are positioned in layers on a substrate, the semiconductor element being provided with: a silicon column; an insulating body surrounding the side surface of the silicon column; a gate surrounding the insulating body; a source region positioned above or below the silicon column; and a drain region positioned below or above the silicon column; wherein the contact surface of the silicon column with the source region is smaller than the contact surface of the silicon column with the drain region.
摘要翻译：本发明的目的是通过增加SGT的导通电流来提供实现作为三维半导体的周围栅极晶体管（SGT）的高速操作的半导体器件。该目的通过提供一种半导体元件来实现，其中源极，漏极和栅极分层地定位在衬底上，半导体元件设置有硅柱; 围绕所述硅柱的侧表面的绝缘体; 围绕绝缘体的门; 位于硅柱上方或下方的源区; 以及位于硅柱下方或上方的漏极区域; 其中所述硅柱与所述源极区域的接触表面小于所述硅柱与所述漏极区的接触表面。

2. 发明授权

US08395208B2 Semiconductor device and method of producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08395208B2
公开(公告)日：2013-03-12
申请号：US13478359
申请日：2012-05-23
申请人： Fujio Masuoka , Shintaro Arai , Hiroki Nakamura , Tomohiko Kudo
发明人： Fujio Masuoka , Shintaro Arai , Hiroki Nakamura , Tomohiko Kudo
IPC分类号： H01L29/94 , H01L29/76 , H01L31/062 , H01L31/119 , H01L31/113
CPC分类号： H01L29/78642 , H01L29/42392 , H01L29/66772
摘要： It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor. The object is achieved by a semiconductor device production method which comprises the steps of: forming a pillar-shaped first-conductive-type semiconductor layer; forming a second-conductive-type semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate; forming a sidewall-shaped dielectric film on a sidewall of the gate; and forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer and on the second-conductive-type semiconductor layer formed underneath the pillar-shaped first-conductive-type semiconductor layer.
摘要翻译：本发明的目的是提供一种能够获得用于降低栅极的电阻，期望的栅极长度，期望的源极和漏极配置以及柱状半导体的期望直径的结构的SGT制造方法。该目的通过一种半导体器件制造方法来实现，该方法包括以下步骤：形成柱状的第一导电型半导体层; 在所述柱状第一导电型半导体层的下方形成第二导电型半导体层; 在柱状第一导电型半导体层周围形成栅极电介质膜和栅电极; 在所述柱状第一导电型半导体层的侧壁的上部区域上形成与所述栅极的顶部接触的侧壁状的电介质膜; 在所述浇口的侧壁上形成侧壁状的电介质膜; 以及在柱状第一导电型半导体层的上部和形成在柱状的第一导电型半导体层下方的第二导电型半导体层上形成第二导电型半导体层。

3. 发明授权

US08241976B2 Semiconductor surrounding gate transistor device and production method therefor 有权
标题翻译：半导体周边栅晶体管器件及其制作方法
公开(公告)号：US08241976B2
公开(公告)日：2012-08-14
申请号：US12704000
申请日：2010-02-11
申请人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
发明人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
IPC分类号： H01L21/8232
CPC分类号： H01L29/78642 , H01L22/26
摘要： The method includes the steps of: forming a planar semiconductor layer on an oxide film formed on a substrate and then forming a pillar-shaped first-conductive-type semiconductor layer on the planar semiconductor layer; forming a second-conductive-type semiconductor layer in a portion of the planar semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode made of a metal, around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate electrode; forming a sidewall-shaped dielectric film on a sidewall of the gate electrode; forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer.
摘要翻译：该方法包括以下步骤：在形成在基板上的氧化膜上形成平面半导体层，然后在平面半导体层上形成柱状的第一导电型半导体层; 在所述柱状第一导电型半导体层的下方的所述平面状半导体层的一部分中形成第二导电型半导体层; 在柱状的第一导电型半导体层周围形成栅极电介质膜和由金属制成的栅电极; 在所述柱状第一导电型半导体层的侧壁的上部区域上形成与所述栅电极的顶部接触的侧壁状的电介质膜; 在所述栅电极的侧壁上形成侧壁状电介质膜; 在柱状第一导电型半导体层的上部形成第二导电型半导体层。

4. 发明授权

US08158468B2 Production method for surrounding gate transistor semiconductor device 有权
标题翻译：围绕栅极晶体管半导体器件的制造方法
公开(公告)号：US08158468B2
公开(公告)日：2012-04-17
申请号：US12703991
申请日：2010-02-11
申请人： Fujio Masuoka , Hiroki Nakamura , Tomohiko Kudo , Shintaro Arai
发明人： Fujio Masuoka , Hiroki Nakamura , Tomohiko Kudo , Shintaro Arai
IPC分类号： H01L21/8232 , H01L29/786
CPC分类号： H01L29/458 , H01L21/84 , H01L27/1203 , H01L29/42392 , H01L29/4908 , H01L29/66666 , H01L29/78618 , H01L29/78642
摘要： Disclosed is a semiconductor device production method, which comprises the steps of: forming a pillar-shaped first-conductive-type semiconductor layer on a planar semiconductor layer; forming a second-conductive-type semiconductor layer in a portion of the planar semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode having a laminated structure of a metal film and an amorphous silicon or polysilicon film, around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate electrode; forming first and second sidewall-shaped dielectric films on a sidewall of the gate electrode; forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer; forming a metal-semiconductor compound on the second-conductive-type semiconductor layer formed in the portion of the planar semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a metal-semiconductor compound on the second-conductive-type semiconductor layer formed in the upper portion of the pillar-shaped first-conductive-type semiconductor layer; forming a metal-semiconductor compound on the gate electrode; forming a contact on the second-conductive-type semiconductor layer formed in the portion of the planar semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; and forming a contact on the second-conductive-type semiconductor layer formed in the upper portion of the pillar-shaped first-conductive-type semiconductor layer.
摘要翻译：公开了一种半导体器件制造方法，其包括以下步骤：在平面半导体层上形成柱状的第一导电型半导体层; 在所述柱状第一导电型半导体层的下方的所述平面状半导体层的一部分中形成第二导电型半导体层; 在所述柱状的第一导电型半导体层周围形成具有金属膜和非晶硅或多晶硅膜的叠层结构的栅极电介质膜和栅电极; 在所述柱状第一导电型半导体层的侧壁的上部区域上形成与所述栅电极的顶部接触的侧壁状的电介质膜; 在所述栅电极的侧壁上形成第一和第二侧壁状电介质膜; 在柱状第一导电型半导体层的上部形成第二导电型半导体层; 在形成在柱状第一导电型半导体层下方的平面状半导体层的部分的第二导电型半导体层上形成金属 - 半导体化合物; 在形成在柱状第一导电型半导体层的上部的第二导电型半导体层上形成金属 - 半导体化合物; 在栅电极上形成金属 - 半导体化合物; 在形成在柱状第一导电型半导体层下方的平面状半导体层的部分的第二导电型半导体层上形成接触; 并且在形成在柱状第一导电型半导体层的上部的第二导电型半导体层上形成接触。

5. 发明授权

US08080458B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08080458B2
公开(公告)日：2011-12-20
申请号：US12761735
申请日：2010-04-16
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , Navab Singh , Kavitha Devi Buddharaju , Shen Nansheng , Rukmani Devi Sayanthan
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , Navab Singh , Kavitha Devi Buddharaju , Shen Nansheng , Rukmani Devi Sayanthan
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L29/42356 , H01L29/42392 , H01L29/458 , H01L29/66666 , H01L29/78642
摘要： A method of manufacturing a semiconductor device includes the steps of forming a first columnar semiconductor layer on a substrate forming a first flat semiconductor layer forming a first semiconductor layer of a second conductive type, and forming a first insulating film. The method further includes the steps of forming a gate insulating film and a gate electrode, forming a second semiconductor layer of the second conductive type, forming a semiconductor layer of a first conductive type and forming a metal-semiconductor compound. The first insulating film has a thickness larger than that of the gate insulating film formed around the first columnar silicon layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在形成第二导电类型的第一半导体层的第一平坦半导体层的基板上形成第一柱状半导体层，形成第一绝缘膜。该方法还包括形成栅绝缘膜和栅电极，形成第二导电类型的第二半导体层的步骤，形成第一导电类型的半导体层并形成金属半导体化合物。第一绝缘膜的厚度大于围绕第一柱状硅层形成的栅极绝缘膜的厚度。

6. 发明申请

US20100187601A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100187601A1
公开(公告)日：2010-07-29
申请号：US12699626
申请日：2010-02-03
申请人： Fujio Masuoka , Tomohiko Kudo
发明人： Fujio Masuoka , Tomohiko Kudo
IPC分类号： H01L29/78
CPC分类号： H01L29/7827 , H01L29/0657 , H01L29/41741 , H01L29/42356 , H01L29/42372 , H01L29/456
摘要： A hermetic compressor includes a closed vessel for storing lubricating oil, an electric-driving element, and a compressing element driven by the electric-driving element. The compressing element includes a cylinder block forming a compression chamber, a piton that reciprocates inside the compression chamber, and an oiling device for supplying the lubricating oil to an outer circumference of the piston. A first oil groove is concavely formed on the outer circumference of the piston, and a second oil groove is concavely formed on a side opposite to the compression chamber relative to the first oil groove. The second oil groove has a spatial volume same or greater than that of the first oil groove. An expanded clearance portion is provided such that a clearance between the piston and the cylindrical hole portion broadens from a top dead point to a bottom dead point.
摘要翻译：封闭式压缩机包括用于存储润滑油的密闭容器，电驱动元件和由电驱动元件驱动的压缩元件。压缩元件包括形成压缩室的气缸体，在压缩室内往复运动的立柱，以及用于将润滑油供给到活塞的外周的供油装置。第一油槽凹入地形成在活塞的外周上，并且第二油槽相对于第一油槽在与压缩室相对的一侧凹入地形成。第二油槽具有与第一油槽相同或更大的空间体积。设置有扩大的间隙部分，使得活塞和圆柱形孔部之间的间隙从上死点扩大到下死点。

7. 发明授权

US08178399B1 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08178399B1
公开(公告)日：2012-05-15
申请号：US13354579
申请日：2012-01-20
申请人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
发明人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/8238
CPC分类号： H01L29/78642 , H01L29/42392 , H01L29/66666
摘要： An SGT production method includes forming a pillar-shaped first-conductive-type semiconductor layer and forming a second-conductive-type semiconductor layer underneath the first-conductive-type semiconductor layer. A dummy gate dielectric film and a dummy gate electrode are formed around the first-conductive-type semiconductor layer and a first dielectric film is formed on an upper region of a sidewall of the first-conductive-type semiconductor layer in contact with a top of the gate electrode. A first dielectric film is formed on a sidewall of the gate electrode and a second-conductive-type semiconductor layer is formed in an upper portion of the first-conductive-type semiconductor layer. A second-conductive-type semiconductor layer is formed in an upper portion of the first-conductive-type semiconductor layer and a metal-semiconductor compound is formed on each of the second-conductive-type semiconductor layers. The dummy gate dielectric film and the dummy gate electrode are removed and a high-k gate dielectric film and a metal gate electrode are formed.
摘要翻译： SGT制造方法包括形成柱状的第一导电型半导体层，在第一导电型半导体层的下方形成第二导电型半导体层。在第一导电型半导体层周围形成虚拟栅极电介质膜和虚拟栅电极，并且第一电介质膜形成在第一导电型半导体层的与顶部接触的第一导电型半导体层的侧壁的上部区域栅电极。第一电介质膜形成在栅电极的侧壁上，第二导电型半导体层形成在第一导电型半导体层的上部。第二导电型半导体层形成在第一导电型半导体层的上部，并且在每个第二导电型半导体层上形成金属半导体化合物。除去虚拟栅极电介质膜和虚拟栅电极，形成高k栅极电介质膜和金属栅电极。

8. 发明申请

US20110115011A1 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体元件和半导体器件
公开(公告)号：US20110115011A1
公开(公告)日：2011-05-19
申请号：US12944310
申请日：2010-11-11
申请人： Fujio Masuoka , Tomohiko Kudo
发明人： Fujio Masuoka , Tomohiko Kudo
IPC分类号： H01L27/088 , H01L29/78
CPC分类号： H01L29/7827 , H01L21/823431 , H01L29/0657 , H01L29/42356 , H01L29/42364 , H01L29/42372 , H01L29/42392 , H01L29/66666 , H01L29/78642
摘要： The object of the invention is to provide a semiconductor device realizing high-speed operation of surrounding gate transistors (SGTs), which are three-dimensional semiconductors, by increasing the ON current of the SGTs. This object is achieved by a semiconductor element being provided in which a source, a drain and a gate are positioned in layers on a substrate, the semiconductor element being provided with: a silicon column; an insulating body surrounding the side surface of the silicon column; a gate surrounding the insulating body; a source region positioned above or below the silicon column; and a drain region positioned below or above the silicon column; wherein the contact surface of the silicon column with the source region is smaller than the contact surface of the silicon column with the drain region.
摘要翻译：本发明的目的是提供通过增加SGT的导通电流来实现作为三维半导体的周围栅极晶体管（SGT）的高速操作的半导体器件。该目的通过提供一种半导体元件来实现，其中源极，漏极和栅极分层地定位在衬底上，半导体元件设置有硅柱; 围绕所述硅柱的侧表面的绝缘体; 围绕绝缘体的门; 位于硅柱上方或下方的源区; 以及位于硅柱下方或上方的漏极区域; 其中所述硅柱与所述源极区域的接触表面小于所述硅柱与所述漏极区的接触表面。

9. 发明授权

US08163605B2 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08163605B2
公开(公告)日：2012-04-24
申请号：US12704004
申请日：2010-02-11
申请人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
发明人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/8238
CPC分类号： H01L29/78642 , H01L29/42392 , H01L29/66666
摘要： It is intended to provide an SGT production method capable of obtaining a structure for reducing a resistance of a source, drain and gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor to be obtained. The method comprises the steps of: forming a pillar-shaped first-conductive-type semiconductor layer; forming a second-conductive-type semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a dummy gate dielectric film and a dummy gate electrode around the pillar-shaped first-conductive-type semiconductor layer; forming a first dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate electrode, through a gate dielectric film; forming a first dielectric film on a sidewall of the gate electrode; forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer; forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer; forming a metal-semiconductor compound on each of the second-conductive-type semiconductor layers formed in the upper portion of and underneath the pillar-shaped first-conductive-type semiconductor layer; removing the dummy gate dielectric film and the dummy gate electrode and forming a high-k gate dielectric film and a metal gate electrode.
摘要翻译：旨在提供一种能够获得用于降低源极，漏极和栅极的电阻，期望的栅极长度，期望的源极和漏极配置以及要获得的柱状半导体的期望直径的结构的SGT制造方法。该方法包括以下步骤：形成柱状第一导电型半导体层; 在所述柱状第一导电型半导体层的下方形成第二导电型半导体层; 在柱状第一导电型半导体层周围形成虚拟栅极电介质膜和虚拟栅电极; 在所述柱状第一导电型半导体层的侧壁的上部区域上形成与所述栅极电极的顶部接触的第一电介质膜，通过栅极电介质膜形成; 在所述栅电极的侧壁上形成第一电介质膜; 在柱状第一导电型半导体层的上部形成第二导电型半导体层; 在柱状第一导电型半导体层的上部形成第二导电型半导体层; 在形成在柱状第一导电型半导体层的上部和下方的每个第二导电型半导体层上形成金属 - 半导体化合物; 去除伪栅极电介质膜和伪栅电极并形成高k栅极电介质膜和金属栅电极。

10. 发明申请

US20110303973A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD 有权
标题翻译：半导体器件和生产方法
公开(公告)号：US20110303973A1
公开(公告)日：2011-12-15
申请号：US13116506
申请日：2011-05-26
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42392 , H01L21/26586 , H01L21/823814 , H01L21/823828 , H01L21/823871 , H01L21/823885 , H01L27/088 , H01L27/092 , H01L29/42384 , H01L29/4908 , H01L29/4958 , H01L29/66666 , H01L29/66772 , H01L29/78618 , H01L29/78642 , H01L29/78696
摘要： The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film.
摘要翻译：根据本发明的半导体器件是nMOS SGT，并且由第一n +型硅层，含有金属的第一栅电极和第二n +型硅层构成，所述第二n +型硅层布置在垂直定位在第一n +型硅层上的第一柱状硅层的表面上第一平面硅层。此外，第一绝缘膜位于第一栅电极和第一平面硅层之间，第二绝缘膜位于第一栅电极的顶表面上。此外，含有第一栅电极的金属被第一n +型硅层，第二n +型硅层，第一绝缘膜和第二绝缘膜包围。

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