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1. 发明授权

US07374973B2 Manufacturing method of semiconductor device and manufacturing method of lead frame 失效
标题翻译：半导体器件的制造方法和引线框架的制造方法
公开(公告)号：US07374973B2
公开(公告)日：2008-05-20
申请号：US11181929
申请日：2005-07-15
申请人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
发明人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
IPC分类号： H01L21/00
CPC分类号： H01L21/56 , H01L21/4821 , H01L23/3107 , H01L23/49558 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
摘要翻译：旨在提高半导体器件的可靠性。通过加热引线框架，在用带子制备引线框架之后，直到进行树脂模制，在160-300℃（优选180-300℃）的温度下，总共超过2分钟具有氧的气氛，粘合剂树脂中的交联密度变高，低分子化合物挥发并跳出外部，因此，由于低分子化合物不会残留在粘合剂的树脂中，所以可以防止铜迁移的产生。

2. 发明申请

US20060199302A1 Semiconductor device and a manufacturing method of the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060199302A1
公开(公告)日：2006-09-07
申请号：US11367297
申请日：2006-03-06
申请人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Yoshitaka Takezawa , Junpei Kusukawa
发明人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Yoshitaka Takezawa , Junpei Kusukawa
IPC分类号： H01L21/00
CPC分类号： H01L23/49503 , H01L23/293 , H01L23/3107 , H01L23/49506 , H01L23/49548 , H01L23/49558 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/50 , H01L24/73 , H01L24/86 , H01L2224/05554 , H01L2224/32014 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device is manufactured by adhering a fixing tape to plural leads of a lead frame comprising a copper alloy, mounting a semiconductor chip on a tab of the lead frame, electrically connecting the leads to electrodes a of the semiconductor chip via bonding wires, forming a sealing resin portion that seals the semiconductor chip, the tab, the bonding wires, the leads and the fixing tape, and cutting the lead frame. A binder layer of the fixing tape includes at least % by weight of an amine-curable epoxy resin as its main component, and does not include a phenol resin. The binder layer of the fixing tape further includes no more than % by weight of acrylonitrile butadiene rubber. By using this material for the binder layer of the fixing tape, migration of the copper in the leads is suppressed even when a degradation test with strict environmental degradation conditions is conducted.
摘要翻译：半导体器件通过将固定带粘附到包括铜合金的引线框架的多个引线上，将引线框架的突片上安装半导体芯片，通过接合线将引线电连接到半导体芯片的电极a，形成密封半导体芯片，突片，接合线，引线和固定带的密封树脂部分，以及切割引线框架。固定带的粘合剂层至少包含以胺可固化的环氧树脂为主要成分的重量百分比，不包括酚醛树脂。定影带的粘合剂层还包括不超过重量％的丙烯腈丁二烯橡胶。通过将该材料用于固定带的粘合剂层，即使进行严格的环境退化条件的劣化试验，也能抑制引线中铜的迁移。

3. 发明申请

US20060014321A1 Manufacturing method of semiconductor device and manufacturing method of lead frame 失效
标题翻译：半导体器件的制造方法及引线框架的制造方法
公开(公告)号：US20060014321A1
公开(公告)日：2006-01-19
申请号：US11181929
申请日：2005-07-15
申请人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
发明人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
IPC分类号： H01L21/50
CPC分类号： H01L21/56 , H01L21/4821 , H01L23/3107 , H01L23/49558 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
摘要翻译：旨在提高半导体器件的可靠性。通过加热引线框架，在用带子制备引线框架之后，直到进行树脂模制，在160-300℃（优选180-300℃）的温度下，总共超过2分钟具有氧的气氛，粘合剂树脂中的交联密度变高，低分子化合物挥发并跳出外部，因此，由于低分子化合物不会残留在粘合剂的树脂中，所以可以防止铜迁移的产生。

4. 发明授权

US07989267B2 Manufacturing method of semiconductor device and manufacturing method of lead frame 有权
标题翻译：半导体器件的制造方法和引线框架的制造方法
公开(公告)号：US07989267B2
公开(公告)日：2011-08-02
申请号：US12104154
申请日：2008-04-16
申请人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
发明人： Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
IPC分类号： H01L21/00
CPC分类号： H01L21/56 , H01L21/4821 , H01L23/3107 , H01L23/49558 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
摘要翻译：旨在提高半导体器件的可靠性。通过加热引线框架，在用带子制备引线框架之后，直到进行树脂模制，在160-300℃（优选180-300℃）的温度下，总共超过2分钟具有氧的气氛，粘合剂树脂中的交联密度变高，低分子化合物挥发并跳出外部，因此，由于低分子化合物不会残留在粘合剂的树脂中，所以可以防止铜迁移的产生。

5. 发明申请

US20080199987A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF LEAD FRAME 有权
标题翻译：半导体器件的制造方法和引线框架的制造方法
公开(公告)号：US20080199987A1
公开(公告)日：2008-08-21
申请号：US12104154
申请日：2008-04-16
申请人： Fujio ITO , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
发明人： Fujio ITO , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
IPC分类号： H01L21/56
CPC分类号： H01L21/56 , H01L21/4821 , H01L23/3107 , H01L23/49558 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
摘要翻译：旨在提高半导体器件的可靠性。通过加热引线框架，在用带子制备引线框架之后，直到进行树脂模制，在160-300℃（优选180-300℃）的温度下，总共超过2分钟具有氧的气氛，粘合剂树脂中的交联密度变高，低分子化合物挥发并跳出外部，因此，由于低分子化合物不会残留在粘合剂的树脂中，所以可以防止铜迁移的产生。

6. 发明授权

US06791182B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06791182B2
公开(公告)日：2004-09-14
申请号：US10103799
申请日：2002-03-25
申请人： Junpei Kusukawa , Ryozo Takeuchi , Toshiaki Ishii , Hiromichi Suzuki , Fujio Ito , Takafumi Nishita , Akihiko Kameoka , Masaru Yamada
发明人： Junpei Kusukawa , Ryozo Takeuchi , Toshiaki Ishii , Hiromichi Suzuki , Fujio Ito , Takafumi Nishita , Akihiko Kameoka , Masaru Yamada
IPC分类号： H01L2310
CPC分类号： H01L23/564 , H01L23/3128 , H01L23/4334 , H01L23/49582 , H01L23/49816 , H01L23/49866 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.
摘要翻译：引线框架1的内部引线1a的至少一部分被用金属细线连接的电镀覆盖，至少引线框架1与粘合剂层2连接的整个部分被至少一种金属或它们与金属细线不同的连接用电镀的合金。金属或合金选自金，铂，铱，铑，钯，钌，铟，锡，钼，钨，镓，锌，铬，铌，钽，钛和锆。因此，可以防止由于离子迁移而产生诸如泄漏和短路的缺陷。

7. 发明授权

US09326425B2 Power module 有权
标题翻译：电源模块
公开(公告)号：US09326425B2
公开(公告)日：2016-04-26
申请号：US13996640
申请日：2011-12-07
申请人： Tokihito Suwa , Yujiro Kaneko , Masashi Yura , Nobutake Tsuyuno , Toshiaki Ishii , Junpei Kusukawa
发明人： Tokihito Suwa , Yujiro Kaneko , Masashi Yura , Nobutake Tsuyuno , Toshiaki Ishii , Junpei Kusukawa
IPC分类号： H05K7/02 , H05K7/20 , H01L23/433 , H01L25/16 , H02M7/00 , H01L23/473 , H01L25/18 , H01L23/36 , H01L25/11 , H01L23/367
CPC分类号： H05K7/20509 , H01L23/36 , H01L23/3677 , H01L23/4334 , H01L23/473 , H01L25/072 , H01L25/115 , H01L25/16 , H01L25/18 , H01L2224/32245 , H01L2224/40137 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , H05K7/209 , H05K7/20927 , H01L2924/00
摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×∈r, where a relative permittivity of the insulating member is ∈r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.
摘要翻译：本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间，散发功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×∈r的关系，其中绝缘构件的相对介电常数为∈r，a 伴随功率半导体器件的ON / OFF开关操作的导体板和散热板之间产生的浪涌电压为Vt（V）。功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

8. 发明授权

US08723306B2 Power semiconductor unit, power module, power semiconductor unit manufacturing method, and power module manufacturing method 有权
标题翻译：功率半导体单元，功率模块，功率半导体单元制造方法和功率模块制造方法
公开(公告)号：US08723306B2
公开(公告)日：2014-05-13
申请号：US13811722
申请日：2011-07-25
申请人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa
发明人： Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa
IPC分类号： H01L23/495
CPC分类号： H01L23/49568 , B60L1/003 , B60L3/003 , B60L7/14 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/12 , B60L2240/36 , B60L2240/525 , H01L21/56 , H01L21/565 , H01L23/473 , H01L23/49575 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/06181 , H01L2224/291 , H01L2224/32245 , H01L2224/33 , H01L2224/37011 , H01L2224/4007 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1203 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15151 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H02M7/003 , H05K7/20927 , Y02T10/6217 , Y02T10/645 , Y02T10/7077 , Y02T10/7241 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.
摘要翻译：电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的区域项目。在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角为每一个。

9. 发明授权

US09137888B2 Power distribution mounting component and inverter apparatus using same 有权
标题翻译：配电安装部件及使用该装置的逆变器装置
公开(公告)号：US09137888B2
公开(公告)日：2015-09-15
申请号：US13575554
申请日：2011-01-24
申请人： Junpei Kusukawa , Hironori Matsumoto
发明人： Junpei Kusukawa , Hironori Matsumoto
IPC分类号： H05K1/00 , H05K1/09 , H05K1/02 , H02G5/00 , H02M7/00
CPC分类号： H05K1/0265 , H02G5/005 , H02M7/003
摘要： The present invention is a power distribution mounting component operable at high voltages. More specifically, the power distribution mounting component includes: an insulating layer; current-carrying first conductor layers sandwiching the insulating layer; and a second conductor layer (thinner than the first conductor layers) interposed between the insulating layer and at least one of the first conductor layers. Each the second conductor layer between the insulating layer and the overlying current-carrying first conductor layer is sufficiently thinner than the first conductor layer and is therefore formed in close adhesion to the insulating layer, thereby increasing the partial discharge inception voltage of the power distribution mounting component and therefore its insulation reliability.
摘要翻译：本发明是一种在高电压下工作的配电安装部件。更具体地，配电安装部件包括：绝缘层; 夹持绝缘层的载流第一导体层; 以及介于所述绝缘层和所述第一导体层中的至少一个之间的第二导体层（比所述第一导体层更薄）。绝缘层和上覆载流的第一导体层之间的第二导体层的每一个都比第一导体层充分薄，因此与绝缘层紧密地形成，从而增加配电安装的局部放电起始电压因此其绝缘可靠性。

10. 发明申请

US20130279230A1 Power Module 有权
标题翻译：电源模块
公开(公告)号：US20130279230A1
公开(公告)日：2013-10-24
申请号：US13996640
申请日：2011-12-07
申请人： Tokihito Suwa , Yujiro Kaneko , Masashi Yura , Nobutake Tsuyuno , Toshiaki Ishii , Junpei Kusukawa
发明人： Tokihito Suwa , Yujiro Kaneko , Masashi Yura , Nobutake Tsuyuno , Toshiaki Ishii , Junpei Kusukawa
IPC分类号： H02M7/00 , H05K7/20
CPC分类号： H05K7/20509 , H01L23/36 , H01L23/3677 , H01L23/4334 , H01L23/473 , H01L25/072 , H01L25/115 , H01L25/16 , H01L25/18 , H01L2224/32245 , H01L2224/40137 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , H05K7/209 , H05K7/20927 , H01L2924/00
摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×εr, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.
摘要翻译：本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间，消耗功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×ε的关系，其中绝缘部件的相对介电常数为Er，浪涌电压在导体板和散热板之间产生的功率半导体器件的ON / OFF开关操作是Vt（V）。功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

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