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1. 发明专利

JP2010054634A Negative resist composition and pattern forming method 审中-公开
标题翻译：负极组合物和图案形成方法
公开(公告)号：JP2010054634A
公开(公告)日：2010-03-11
申请号：JP2008217354
申请日：2008-08-26
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HOSHINO WATARU , NISHIKAWA NAOYUKI , TARUYA SHINJI , YOSHITOME MASAHIRO
IPC分类号： G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a negative resist composition which exhibits good sensitivity and good pattern shape and ensures little residue and little residual film in an unexposed portion, and a pattern forming method using the same. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound having a radical-polymerizable group and an alkali-soluble group, and (C) a photoradical generator. The pattern forming method using the same is also provided. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种显示出良好的灵敏度和良好的图案形状并且确保在未曝光部分中几乎没有残留物和少量残留膜的负性抗蚀剂组合物，以及使用其的图案形成方法。解决方案：负型抗蚀剂组合物含有（A）碱溶性树脂，（B）具有自由基聚合性基团和碱溶性基团的化合物，（C）光自由基发生剂。还提供了使用该图案形成方法的图案形成方法。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009251392A Negative resist composition and pattern forming method 审中-公开
标题翻译：负极组合物和图案形成方法
公开(公告)号：JP2009251392A
公开(公告)日：2009-10-29
申请号：JP2008100758
申请日：2008-04-08
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TARUYA SHINJI , HOSHINO WATARU , YOSHITOME MASAHIRO
IPC分类号： G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a negative resist composition less liable to cause a film thickness loss and pattern collapse and a pattern forming method. SOLUTION: The negative resist composition comprises: (A) an alkali-soluble resin; (B) a crosslinking agent which crosslinks an alkali-soluble resin under the action of an acid; (C1) a compound which allows a crosslinking reaction to proceed upon irradiation with actinic rays or radiation; (C2) a photoradical generator; and (D) a compound having a radical polymerizable group. The pattern forming method is also provided. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供不容易引起膜厚度损失和图案崩溃的负型抗蚀剂组合物和图案形成方法。解决方案：负型抗蚀剂组合物包含：（A）碱溶性树脂; （B）在酸的作用下交联碱溶性树脂的交联剂; （C1）允许在用光化射线或辐射照射时进行交联反应的化合物; （C2）光电发生器; 和（D）具有自由基聚合性基团的化合物。还提供了图案形成方法。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009098606A Negative resist composition and pattern forming method using the same 审中-公开
标题翻译：负极性组合物和使用其的图案形成方法
公开(公告)号：JP2009098606A
公开(公告)日：2009-05-07
申请号：JP2008093998
申请日：2008-03-31
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HOSHINO WATARU , TARUYA SHINJI , TSUCHIMURA TOMOTAKA , YOSHITOME MASAHIRO
IPC分类号： G03F7/032 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution, and to provide a pattern forming method using the composition. SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a radical polymerizable group, and (C) a photoradical generator. The pattern forming method using the composition is also provided. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了解决使用远紫外线的微照片制造的性能改进技术，特别是193nm波长的ArF准分子激光器的问题，特别是提供一种负型抗蚀剂组合物，即使在精细图案形成中，避免图案塌陷并显示出良好的分辨率，并提供使用该组合物的图案形成方法。解决方案：负型抗蚀剂组合物包括（A）碱溶性树脂，（B）具有自由基聚合性基团的化合物和（C）光自由基发生剂。还提供了使用该组合物的图案形成方法。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008281980A Pattern forming method, and resist composition, developing solution for negative development and rising solution for negative development to be used in the same 有权
标题翻译：图案形成方法和耐性组合物，用于负面发展的发展解决方案和上述解决方案，用于在其中使用的负面发展
公开(公告)号：JP2008281980A
公开(公告)日：2008-11-20
申请号：JP2007227976
申请日：2007-09-03
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： WADA KENJI , TSUBAKI HIDEAKI , TARUYA SHINJI , HOSHINO WATARU , MIZUTANI KAZUYOSHI
IPC分类号： G03F7/30 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a resin composition to be used in the method and a developing solution to be used in the method. SOLUTION: The pattern forming method includes: (1) coating a resist composition that decreases the solubility in a negative developing solution upon irradiation with actinic rays or radiation; (2) exposing; and (3) developing with a negative developing solution. There are also provided the resist composition to be used in the method and the developing solution and a rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶，热敏头和或其他光制造方法中使用的方法中使用的树脂组合物和用于该方法的显影液。图案形成方法包括：（1）在光化射线或辐射照射时，涂覆抗蚀剂组合物，其降低在显影液中的溶解度; （2）曝光; 和（3）用负显影液显影。还提供了在该方法和显影液中使用的抗蚀剂组合物和用于该方法的冲洗溶液。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2012078501A Alignment layer, optical film, polarizing plate and liquid crystal display device 审中-公开
标题翻译：对准层，光学膜，极化板和液晶显示装置
公开(公告)号：JP2012078501A
公开(公告)日：2012-04-19
申请号：JP2010222638
申请日：2010-09-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HOSHINO WATARU , MURAMATSU AYAKO
IPC分类号： G02B5/30 , B32B7/02 , G02F1/13363
CPC分类号： G02B5/3016 , G02F2413/105
摘要： PROBLEM TO BE SOLVED: To provide an alignment layer having reduced irregularity like interference fringes.SOLUTION: The alignment layer comprises a composition containing: a first polymer having a repeating unit having at least one hydrophilic group selected from a carboxyl group and its salt, sulfonic acid group and its salt, amino group and its salt, phosphoric acid group and its salt, phosphonic acid group and its salt, phosphinic acid group and its salt, hydroxyl group, amide group and sulfonamide group; and a second polymer having a repeating unit having an aromatic group. The mass proportion (r1) of the first polymer is higher than the mass proportion (r2) of the second polymer.
摘要翻译：要解决的问题：提供具有减小的不规则性的对准层，如干涉条纹。解决方案：取向层包括一种组合物，其含有：具有至少一个选自羧基及其盐的亲水基团的重复单元的第一聚合物，磺酸基及其盐，氨基及其盐，磷酸基团及其盐，膦酸基及其盐，次膦酸基及其盐，羟基，酰胺基和磺酰胺基; 和具有具有芳基的重复单元的第二聚合物。第一聚合物的质量比（r1）高于第二聚合物的质量比例（r2）。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2009258506A Negative resist composition and resist pattern-forming method 审中-公开
标题翻译：负极组合物和电阻形成方法
公开(公告)号：JP2009258506A
公开(公告)日：2009-11-05
申请号：JP2008109335
申请日：2008-04-18
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HOSHINO WATARU , YOSHITOME MASAHIRO , TARUYA SHINJI
IPC分类号： G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a negative resist composition which ensures an adequate bridge margin (that is, substantially avoids the occurrence of the defect that patterns connect with each other).
SOLUTION: The negative resist composition contains (A) a resin whose solubility in an alkali developer decreases by the action of an acid, (B) a cationic polymerizable compound, (C) a cationic photopolymerization initiator, and (D) a compound which generates an acid upon irradiation with actinic rays or radiation. A pattern-forming method using the composition is also provided.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种确保足够的桥接裕度的负的抗蚀剂组合物（即，基本上避免了图案彼此连接的缺陷的发生）。解决方案：负型抗蚀剂组合物含有（A）通过酸的作用使碱显影剂的溶解度降低的树脂，（B）阳离子聚合性化合物，（C）阳离子性光聚合引发剂，（D）化合物，其在用光化射线或辐射照射时产生酸。还提供了使用该组合物的图案形成方法。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009237378A Negative resist composition and method for forming pattern using the same 有权
标题翻译：负极性组合物和使用其形成图案的方法
公开(公告)号：JP2009237378A
公开(公告)日：2009-10-15
申请号：JP2008084981
申请日：2008-03-27
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HOSHINO WATARU , TARUYA SHINJI , YOSHITOME MASAHIRO
IPC分类号： G03F7/038 , C08F220/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a negative resist composition exhibiting excellent sensitivity, pattern profile and defocus latitude, and to provide a method for forming a pattern. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin having a repeating unit (a1), containing an alkali-soluble group in organic groups having a sulfonamide structure, organic groups having sulfonimide structure, organic groups having a dicarbonylmethylene structure and organic groups having a naphthol structure, and (a2) a repeating unit having an epoxy structure; (B) a compound having two or more epoxy structures in the molecule; and (C) a photo-acid generator. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供显示出优异的灵敏度，图案形状和散焦纬度的负光刻胶组合物，并提供形成图案的方法。＆lt; P＆gt;解决方案：负光刻胶组合物含有（A）具有重复单元（a1）的碱溶性树脂，其具有磺酰胺结构的有机基团中含有碱溶性基团，具有磺酰亚胺结构的有机基团，具有磺酰亚胺结构的有机基团二羰基亚甲基结构和具有萘酚结构的有机基团，和（a2）具有环氧结构的重复单元; （B）分子中具有两个以上环氧结构的化合物; 和（C）光酸产生剂。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009098602A Negative resist composition and a method of forming a resist pattern 审中-公开
标题翻译：负极组合和电阻形成方法
公开(公告)号：JP2009098602A
公开(公告)日：2009-05-07
申请号：JP2008074733
申请日：2008-03-21
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HOSHINO WATARU , YOSHITOME MASAHIRO
IPC分类号： G03F7/027 , G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution. SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a conjugated diene structure, and (C) a photo-cationic polymerization initiator. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了解决使用远紫外线的微照片制造的性能改进技术，特别是193nm波长的ArF准分子激光器的问题，特别是提供一种负型抗蚀剂组合物，即使在精细图案形成中，避免图案崩溃，表现出良好的分辨率。解决方案：负型抗蚀剂组合物包括（A）碱溶性树脂，（B）具有共轭二烯结构的化合物和（C）光阳离子聚合引发剂。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008281974A Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method 有权
标题翻译：图案形成方法，用于图案形成方法的抗蚀组合物，用于图案形成方法的阴极开发解决方案和用于图案形成方法的负面开发的冲洗解决方案
公开(公告)号：JP2008281974A
公开(公告)日：2008-11-20
申请号：JP2007197838
申请日：2007-07-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TSUBAKI HIDEAKI , TARUYA SHINJI , MIZUTANI KAZUYOSHI , WADA KENJI , HOSHINO WATARU
IPC分类号： G03F7/30 , C08F20/28 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for stably forming a high-accuracy fine pattern to be used in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, a resist composition to be used in the method, a developing solution to be used in the method and a rinsing solution to be used in the method. SOLUTION: The pattern forming method includes: (α) coating a resist composition including a resin that includes a specific repeating unit, and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (β) exposing; and (γ) developing with a negative developing solution. There are also provided the resist composition to be used in the method, the developing solution to be used in the method and the rinsing solution to be used in the method. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于稳定地形成用于诸如IC的半导体的制造过程中的高精度精细图案的方法，在制造液晶，热敏头和或其他光加工方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。解决方案：图案形成方法包括：（α）涂覆包含特定重复单元的树脂的抗蚀剂组合物，并且通过酸的作用，增加极性并降低在显影液中的溶解度; （β）曝光; 和（γ）用负显影液显影。还提供了该方法中使用的抗蚀剂组合物，该方法中使用的显影液和该方法中使用的漂洗溶液。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008197480A Resist composition and pattern forming method using the same 有权
标题翻译：使用它的耐蚀组合物和图案形成方法
公开(公告)号：JP2008197480A
公开(公告)日：2008-08-28
申请号：JP2007033742
申请日：2007-02-14
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MAKINO MASAOMI , HOSHINO WATARU , MIZUTANI KAZUYOSHI
IPC分类号： G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which satisfies high sensitivity and good density distribution dependency at the same time, and also ensures good line width roughness and a good dissolution contrast, and a pattern forming method using the same. SOLUTION: The resist composition includes: (A) a resin containing a repeating unit having a specific secondary benzyl structure; and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation. The pattern forming method using the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT

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