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    • 1. 发明授权
      US08877657B2 Process for producing semiconductive layers 有权
    • Process for producing semiconductive layers
    • 生产半导体层的工艺
    • US08877657B2
    • 2014-11-04
    • US13266935
    • 2010-04-26
    • Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
    • Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
    • H01L21/31 , H01L29/786 , C23C18/12 , H01L21/02 , H01L29/66
    • C23C18/1216 , C23C18/1245 , H01L21/02381 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/66742 , H01L29/66969 , H01L29/7869
    • The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.
    • 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液： 由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲 衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C） 在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电 中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到 已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法​​，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 2. 发明申请
      US20120043537A1 PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS 有权
    • PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS
    • 生产半导体层的工艺
    • US20120043537A1
    • 2012-02-23
    • US13266935
    • 2010-04-26
    • Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
    • Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
    • H01L29/22 , H01L21/16 , C01B21/00
    • C23C18/1216 , C23C18/1245 , H01L21/02381 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/66742 , H01L29/66969 , H01L29/7869
    • The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.
    • 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液： 由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲 衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C） 在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电 中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到 已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法​​，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 3. 发明申请
      US20120086002A1 THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS 有权
    • THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS
    • 用于改进间断接触点和用于填充半导体金属氧化物颗粒层中的相互作用的热可塑前体化合物
    • US20120086002A1
    • 2012-04-12
    • US13378765
    • 2010-06-15
    • Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
    • Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
    • H01L29/22 , H01L21/20
    • H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02601 , H01L21/02628
    • The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:(A) applying a porous layer of at least one semiconductive metal oxide to a substrate,(B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and(C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide,wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.
    • 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B） 用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理 步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自 由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物 氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 4. 发明授权
      US09129801B2 Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers 有权
    • Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers
    • 用于改善晶间接触部位并填充半导体金属氧化物颗粒层间隙的热不稳定前体化合物
    • US09129801B2
    • 2015-09-08
    • US13378765
    • 2010-06-15
    • Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
    • Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
    • H01L21/00 , H01L21/16 , H01L21/02 , H01L29/10 , H01L29/12
    • H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02601 , H01L21/02628
    • The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) applying a porous layer of at least one semiconductive metal oxide to a substrate, (B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and (C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.
    • 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B） 用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理 步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自 由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物 氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 9. 发明申请
      US20130200336A1 METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE 有权
    • METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE
    • 用于生产有机半导体器件的方法
    • US20130200336A1
    • 2013-08-08
    • US13365673
    • 2012-02-03
    • Subramanian VAIDYANATHAN , Marcel Kastler , Bertha Tan , Mi Zhou
    • Subramanian VAIDYANATHAN , Marcel Kastler , Bertha Tan , Mi Zhou
    • H01L51/30 , H01L51/40
    • C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/146 , C08G2261/312 , C08G2261/3223 , C08G2261/3229 , C08G2261/3246 , C08G2261/3327 , C08G2261/334 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/51 , C08G2261/92 , H01L51/0036 , H01L51/0043 , H01L51/0558
    • A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.
    • 公开了一种用于制造具有至少一种有机半导体材料（122）和至少两个电极（114）的有机半导体器件（110）的方法，所述至少两个电极（114）适于支持通过有机半导体材料（122）传输的电荷载流子。 有机半导体材料（122）本身具有双极性半导体性质。 所述方法包括产生至少一个中间层（120）的至少一个步骤，所述中间层至少部分地介于有机半导体材料（122）和有机半导体器件（110）的至少一个电极（114）之间。 中间层（120）包含至少一种具有通式HS-R的硫醇化合物，其中R是有机残基。 硫醇化合物具有指向远离硫醇化合物的SH基团的电偶极矩。 电偶极矩与4-苯基苯硫酚中的电偶极矩至少相同。 通过中间层（120），电极（114）之间的双极电荷载流子传输被抑制以有利于单极电荷载流子传输。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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