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1. 发明授权

US11505847B2 Method and apparatus for Ga-recovery 有权
公开(公告)号：US11505847B2
公开(公告)日：2022-11-22
申请号：US16309473
申请日：2017-06-13
申请人： Freiberger Compound Materials GMBH , Helmholtz-Zentrum Dresden-Rossendorf E.V. , Technische Universität Bergakademie Freiberg
发明人： Thomas Reinhold , Stefan Eichler , Berndt Weinert , Oliver Zeidler , Michael Stelter
IPC分类号： C22B58/00 , C22B3/44 , C22B7/00 , C22B3/42
摘要： The present invention encompasses a method of selectively separating Ga from wastewaters with the aid of a dialysis method. This exploits the particular complexation behaviour of Ga, which forms an unstable tetrahalo complex. This forms only in the case of a sufficiently high halide concentration. Since the halide concentration becomes lower across the membrane, the Ga-tetrahalo complex breaks down in the membrane, as a result of which the Ga is retained. Other metals such as In and Fe do not show this behaviour, and therefore the tetrahalo complexes of these metals can pass through the membrane and hence can be selectively separated off.

2. 发明申请

US20190161826A1 METHOD AND APPARATUS FOR GA-RECOVERY 审中-公开
公开(公告)号：US20190161826A1
公开(公告)日：2019-05-30
申请号：US16309473
申请日：2017-06-13
申请人： Freiberger Compound Materials GMBH , Helmholtz-Zentrum Dresden-Rossendorf E.V. , Technische Universität Bergakademie Freiberg
发明人： Thomas Reinhold , Stefan Eichler , Berndt Weinert , Oliver Zeidler , Michael Stelter
IPC分类号： C22B58/00 , C22B7/00 , C22B3/42 , C22B3/44
摘要： The present invention encompasses a method of selectively separating Ga from wastewaters with the aid of a dialysis method. This exploits the particular complexation behaviour of Ga, which forms an unstable tetrahalo complex. This forms only in the case of a sufficiently high halide concentration. Since the halide concentration becomes lower across the membrane, the Ga-tetrahalo complex breaks down in the membrane, as a result of which the Ga is retained. Other metals such as In and Fe do not show this behaviour, and therefore the tetrahalo complexes of these metals can pass through the membrane and hence can be selectively separated off.

3. 发明授权

US11965266B2 Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations 有权
公开(公告)号：US11965266B2
公开(公告)日：2024-04-23
申请号：US17059772
申请日：2020-06-03
申请人： Freiberger Compound Materials GmbH
发明人： Stefan Eichler , Michael Rosch , Dmitry Suptel , Ulrich Kretzer , Berndt Weinert
IPC分类号： B32B3/00 , C30B11/00 , C30B29/40 , C30B29/42
CPC分类号： C30B11/002 , C30B11/003 , C30B29/40 , C30B29/42
摘要： A device (1′, 1″, 1′″) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2′, 2″, 2′″) for receiving the melt (16) having a first section (4′, 4″) including a first cross-sectional area and a second section (6′) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8′) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt. The first section (4′, 4″) of the crucible (2′, 2″, 2′″) has a central axis (M), and the second section (6′) is arranged being offset (v) with regard to the central axis (M) of the first section (4′, 4″).

4. 发明授权

US11170989B2 Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity 有权
公开(公告)号：US11170989B2
公开(公告)日：2021-11-09
申请号：US15886091
申请日：2018-02-01
申请人： FREIBERGER COMPOUND MATERIALS GMBH
发明人： Wolfram Fliegel , Christoph Klement , Christa Willnauer , Max Scheffer-Czygan , André Kleinwechter , Stefan Eichler , Berndt Weinert , Michael Mäder
IPC分类号： C30B29/42 , H01L21/02 , G01N21/21 , H01L29/20 , G01N21/17
摘要： The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization.

5. 发明授权

US10662549B2 Growth of A-B crystals without crystal lattice curvature 有权
公开(公告)号：US10662549B2
公开(公告)日：2020-05-26
申请号：US15559446
申请日：2016-03-18
申请人： FREIBERGER COMPOUND MATERIALS GMBH
发明人： Berndt Weinert , Frank Habel , Gunnar Leibiger
IPC分类号： C30B25/02 , C30B25/08 , C30B29/40 , C30B25/18
摘要： The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant. Therein, the compound semiconductor crystal is deposited at a surface of the substrate, while a liquid phase can form on the growing crystal.Further, auxiliary substances may be added, which can also be contained in the liquid phase, but is only incorporated in low amounts into the compound semiconductor crystal.Herein, 3D- and 2D-growth modes can be controlled in a targeted manner.The addition of auxiliary substances and the presence of a liquid phase favour these means.The product is a single crystal of the respective III-V-, IV-IV- or II-VI-compound semiconductor crystal, which, compared to respectively conventional compound semiconductor crystals has a lower concentration of inclusions or precipitates and nevertheless has no or only a very low curvature.

6. 发明授权

US10460924B2 Process for producing a gallium arsenide substrate which includes marangoni drying 有权
公开(公告)号：US10460924B2
公开(公告)日：2019-10-29
申请号：US14767603
申请日：2014-02-12
申请人： FREIBERGER COMPOUND MATERIALS GMBH
发明人： Wolfram Fliegel , Christoph Klement , Christa Willnauer , Max Scheffer-Czygan , André Kleinwechter , Stefan Eichler , Berndt Weinert , Michael Mäder
IPC分类号： C30B33/10 , H01L21/02 , G01N21/21 , H01L29/20 , G01N21/17
摘要： The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.

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