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1. 发明申请

US20090006015A1 Method and apparatus for measuring current density in conductive materials 审中-公开
标题翻译：用于测量导电材料中电流密度的方法和装置
公开(公告)号：US20090006015A1
公开(公告)日：2009-01-01
申请号：US11824650
申请日：2007-06-29
申请人： Frederick M. Mueller , Holger Grube , Geoffrey W. Brown , Marilyn E. Hawley , J. Yates Coulter
发明人： Frederick M. Mueller , Holger Grube , Geoffrey W. Brown , Marilyn E. Hawley , J. Yates Coulter
IPC分类号： G01R19/08 , G01R33/09
CPC分类号： G01R33/09 , G01R15/20 , G01R19/08
摘要： The present invention relates to an apparatus and method for measuring a current density in a conductive material. The apparatus and method use an algorithm and an extension to the Fourier transform approach that allows transport currents to be treated accurately. Due to its speed, the resulting algorithm is ideally suited for high-resolution and high-throughput magnetic imaging of superconducting tape in real time.
摘要翻译：本发明涉及一种用于测量导电材料中的电流密度的装置和方法。该装置和方法使用允许精确处理传输电流的傅里叶变换方法的算法和扩展。由于其速度，所得到的算法实际上适用于超导磁带的高分辨率和高吞吐量磁性成像。

2. 发明申请

US20080220279A1 HIGHLY CHARGED ION MODIFIED OXIDE DEVICE AND METHOD OF MAKING SAME 有权
标题翻译：高充电离子改性氧化物装置及其制备方法
公开(公告)号：US20080220279A1
公开(公告)日：2008-09-11
申请号：US12036729
申请日：2008-02-25
申请人： Joshua M. POMEROY , Holger Grube , Andrew Perrella , Fern Slew
发明人： Joshua M. POMEROY , Holger Grube , Andrew Perrella , Fern Slew
IPC分类号： H01F1/00 , B05D3/06
CPC分类号： H01L29/82 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3254 , H01F41/307 , H01L28/40 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1143 , Y10T428/12056 , Y10T428/12465 , Y10T428/12535 , Y10T428/12611 , Y10T428/1266 , Y10T428/12667 , Y10T428/12771 , Y10T428/12986 , Y10T428/12993 , Y10T428/24273 , Y10T428/249967 , Y10T428/24997 , Y10T428/31
摘要： A highly charged ion modified device is provided that includes a first metal layer or layers deposited on a substrate and an insulator layer, deposited on the first metal layer, including a plurality of holes therein produced by irradiation thereof with highly charged ions. The metal of a further metal layer, deposited on the insulator layer, fills the plurality of holes in the insulator layer.
摘要翻译：提供了一种高度带电的离子改性装置，其包括沉积在基底上的第一金属层或沉积在第一金属层上的绝缘体层，其中包括通过高电荷离子照射而产生的多个孔。沉积在绝缘体层上的另一金属层的金属填充绝缘体层中的多个孔。

3. 发明授权

US07914915B2 Highly charged ion modified oxide device and method of making same 有权
标题翻译：高电荷离子改性氧化物装置及其制造方法
公开(公告)号：US07914915B2
公开(公告)日：2011-03-29
申请号：US12036729
申请日：2008-02-25
申请人： Joshua M. Pomeroy , Holger Grube , Andrew Perrella , Fern Slew, legal representative
发明人： Joshua M. Pomeroy , Holger Grube , Andrew Perrella
IPC分类号： G11B5/39 , B32B15/04 , B32B3/26 , B32B3/30
CPC分类号： H01L29/82 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3254 , H01F41/307 , H01L28/40 , H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1143 , Y10T428/12056 , Y10T428/12465 , Y10T428/12535 , Y10T428/12611 , Y10T428/1266 , Y10T428/12667 , Y10T428/12771 , Y10T428/12986 , Y10T428/12993 , Y10T428/24273 , Y10T428/249967 , Y10T428/24997 , Y10T428/31
摘要： A highly charged ion modified device is provided that includes a first metal layer or layers deposited on a substrate and an insulator layer, deposited on the first metal layer, including a plurality of holes therein produced by irradiation thereof with highly charged ions. The metal of a further metal layer, deposited on the insulator layer, fills the plurality of holes in the insulator layer.
摘要翻译：提供了一种高度带电的离子改性装置，其包括沉积在基底上的第一金属层或沉积在第一金属层上的绝缘体层，其中包括通过高电荷离子照射而产生的多个孔。沉积在绝缘体层上的另一金属层的金属填充绝缘体层中的多个孔。

4. 发明授权

US07134342B1 Magnetic infrasound sensor 有权
标题翻译：磁次声传感器
公开(公告)号：US07134342B1
公开(公告)日：2006-11-14
申请号：US10932654
申请日：2004-08-31
申请人： Fred M. Mueller , Lawrence Bronisz , Holger Grube , David C. Nelson , Jonathan L. Mace
发明人： Fred M. Mueller , Lawrence Bronisz , Holger Grube , David C. Nelson , Jonathan L. Mace
IPC分类号： G01P15/105 , G01P15/08
CPC分类号： G01V1/181
摘要： A magnetic infrasound sensor is produced by constraining a permanent magnet inside a magnetic potential well above the surface of superconducting material. The magnetic infrasound sensor measures the position or movement of the permanent magnet within the magnetic potential well, and interprets the measurements. Infrasound sources can be located and characterized by combining the measurements from one or more infrasound sensors. The magnetic infrasound sensor can be tuned to match infrasound source types, resulting in better signal-to-noise ratio. The present invention can operate in frequency modulation mode to improve sensitivity and signal-to-noise ratio. In an alternate construction, the superconductor can be levitated over a magnet or magnets. The system can also be driven, so that time resolved perturbations are sensed, resulting in a frequency modulation version with improved sensitivity and signal-to-noise ratio.
摘要翻译：通过在超导材料表面上方的磁势阱内约束永磁体来产生磁次声传感器。磁次声传感器测量永磁体在磁势阱内的位置或运动，并解释测量结果。次声源可以通过组合来自一个或多个次声传感器的测量结果来定位和表征。可以调节磁次声传感器以匹配次声源类型，从而获得更好的信噪比。本发明可以在频率调制模式下工作，以提高灵敏度和信噪比。在替代结构中，超导体可以悬浮在磁体或磁体上。该系统也可以被驱动，从而感测时间分辨的扰动，导致具有改善的灵敏度和信噪比的频率调制版本。

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