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1. 发明申请

US20050145863A1 Oxygen-doped al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
公开(公告)号：US20050145863A1
公开(公告)日：2005-07-07
申请号：US11059207
申请日：2005-02-16
申请人： Fred Kish , Sheila Hurtt , Charles Joyner , Richard Schneider
发明人： Fred Kish , Sheila Hurtt , Charles Joyner , Richard Schneider
IPC分类号： H01L29/165 , H01L29/22 , H01L29/40 , H01L31/0304 , H01L31/109 , H01L31/153 , H01L33/14 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

2. 发明申请

US20080044128A1 TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs 审中-公开
标题翻译：发射机光电集成电路（TxPIC）和使用TxPIC的光传输网络系统
公开(公告)号：US20080044128A1
公开(公告)日：2008-02-21
申请号：US11765403
申请日：2007-06-19
申请人： Fred Kish , David Welch , Mark Missey , Radhakrishnan Nagarajan , Atul Mathur , Frank Peters , Richard Schneider , Charles Joyner , Andrew Dentai , Damien Lambert , Masaki Kato , Sheila Hurtt , Randal Salvatore , Mehrdad Ziari , Vincent Dominic
发明人： Fred Kish , David Welch , Mark Missey , Radhakrishnan Nagarajan , Atul Mathur , Frank Peters , Richard Schneider , Charles Joyner , Andrew Dentai , Damien Lambert , Masaki Kato , Sheila Hurtt , Randal Salvatore , Mehrdad Ziari , Vincent Dominic
IPC分类号： G02B6/12
CPC分类号： G02B6/12033 , G02B6/12004 , G02B6/12019 , H04J14/02
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

3. 发明申请

US20050151144A1 Oxygen-doped al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含电流阻挡层
公开(公告)号：US20050151144A1
公开(公告)日：2005-07-14
申请号：US11059201
申请日：2005-02-16
申请人： Fred Kish , Sheila Hurtt , Charles Joyner , Richard Schneider
发明人： Fred Kish , Sheila Hurtt , Charles Joyner , Richard Schneider
IPC分类号： H01L29/165 , H01L29/22 , H01L29/40 , H01L31/0304 , H01L31/109 , H01L31/153 , H01L33/14 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group Ill-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

4. 发明授权

US07208770B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US07208770B2
公开(公告)日：2007-04-24
申请号：US11059207
申请日：2005-02-16
申请人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

5. 发明授权

US07122846B2 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) 有权
标题翻译：在光子集成电路（PIC）中的有源半导体器件中的氧掺杂的含Al电流阻挡层
公开(公告)号：US07122846B2
公开(公告)日：2006-10-17
申请号：US11059201
申请日：2005-02-16
申请人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
发明人： Fred A. Kish, Jr. , Sheila Hurtt , Charles H. Joyner , Richard P. Schneider
IPC分类号： H01L29/221 , H01L29/22
CPC分类号： B82Y20/00 , H01L31/03046 , H01L31/109 , H01L33/145 , H01S5/026 , H01S5/2072 , H01S5/221 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3072 , H01S5/34306 , Y02E10/544
摘要： In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.
摘要翻译：在具有至少一个有源半导体器件（例如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件）的光子集成电路（PIC）中，多个半导体层其中一层是活性区的基底。通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

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