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1. 发明授权

US08520424B2 Composition of memory cell with resistance-switching layers 有权
标题翻译：具有电阻切换层的存储单元的组成
公开(公告)号：US08520424B2
公开(公告)日：2013-08-27
申请号：US13157204
申请日：2011-06-09
申请人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S. Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
发明人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S. Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

2. 发明申请

US20110310655A1 Composition Of Memory Cell With Resistance-Switching Layers 有权
标题翻译：具有电阻切换层的存储单元的组成
公开(公告)号：US20110310655A1
公开(公告)日：2011-12-22
申请号：US13157204
申请日：2011-06-09
申请人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
发明人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

3. 发明申请

US20110227026A1 NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：具有金属氧化物切换元件的非挥发性储存及其制造方法
公开(公告)号：US20110227026A1
公开(公告)日：2011-09-22
申请号：US12942575
申请日：2010-11-09
申请人： Deepak C. Sekar , Franz Kreupl , Raghuveer Makala , Peter Rabkin , Chu-Chen Fu , Tong Zhang
发明人： Deepak C. Sekar , Franz Kreupl , Raghuveer Makala , Peter Rabkin , Chu-Chen Fu , Tong Zhang
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air brake. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide. Sub-plantation may be used to create a titanium region between two metal oxide regions.
摘要翻译：本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。可逆电阻率开关元件可以通过在顶部电极上沉积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。一个实施例包括在金属氧化物和顶部电极之间具有双层覆盖层的可逆电阻率开关元件。制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而不用空气制动。一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。亚种植园可用于在两个金属氧化物区域之间产生钛区域。

4. 发明申请

US20130148404A1 ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：具有多个记忆状态的基于抗病毒剂的记忆细胞及其形成方法
公开(公告)号：US20130148404A1
公开(公告)日：2013-06-13
申请号：US13314580
申请日：2011-12-08
申请人： Abhijit Bandyopadhyay , Roy E. Scheuerlein , Peter Rabkin
发明人： Abhijit Bandyopadhyay , Roy E. Scheuerlein , Peter Rabkin
IPC分类号： G11C17/00 , H01L29/92
CPC分类号： H01L28/40 , G11C11/5692 , G11C17/165 , G11C17/18 , H01L23/5252 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/10 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： In some aspects, a memory cell is provided that includes a steering element and a metal-insulator-metal (“MIM”) stack coupled in series with the steering element. The MIM stack includes a first dielectric material layer and a second dielectric material layer disposed on the first dielectric material layer, without a metal or other conductive layer disposed between the first dielectric material layer and the second dielectric material layer. Numerous other aspects are provided.
摘要翻译：在一些方面，提供了一种存储单元，其包括转向元件和与转向元件串联耦合的金属 - 绝缘体金属（“MIM”）堆叠。 MIM堆叠包括第一介电材料层和设置在第一介电材料层上的第二电介质材料层，而没有金属或其它导电层设置在第一介电材料层和第二电介质材料层之间。提供了许多其他方面。

5. 发明授权

US08435831B2 Non-volatile storage with metal oxide switching element and methods for fabricating the same 有权
公开(公告)号：US08435831B2
公开(公告)日：2013-05-07
申请号：US12942575
申请日：2010-11-09
申请人： Deepak C. Sekar , Franz Kreupl , Raghuveer Makala , Peter Rabkin
发明人： Deepak C. Sekar , Franz Kreupl , Raghuveer Makala , Peter Rabkin
IPC分类号： H01L21/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

6. 发明授权

US08462580B2 Memory system with reversible resistivity-switching using pulses of alternatrie polarity 有权
标题翻译：具有可逆电阻率切换的存储系统，使用交替极性的脉冲
公开(公告)号：US08462580B2
公开(公告)日：2013-06-11
申请号：US12948375
申请日：2010-11-17
申请人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
发明人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
IPC分类号： G11C7/12 , G11C8/08 , G11C7/22 , G11C11/36 , G11C11/34
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2013/0092 , G11C2213/72
摘要： A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.
摘要翻译：存储器系统包括多个非易失性存储元件，每个非易失性存储元件包括与可逆电阻切换材料串联的二极管（或其他转向装置）。存储器系统中的一个或多个电路通过将一个或多个非易失性存储元件的可逆电阻切换材料改变为第一电阻状态而对非易失性存储元件进行编程。存储系统还可以将一个或多个非易失性存储元件的可逆电阻切换材料从第一电阻状态改变到第二电阻状态，通过将一对或多对相反极性的电压条件（例如，脉冲）施加到相应的二极管（或其他转向装置）使得电流在二极管（或其他转向装置）中流动，而不会在击穿情况下操作二极管（或其他转向装置）。

7. 发明申请

US20120120711A1 MEMORY SYSTEM WITH REVERSIBLE RESISTIVITY-SWITCHING USING PULSES OF ALTERNATRIE POLARITY 有权
公开(公告)号：US20120120711A1
公开(公告)日：2012-05-17
申请号：US12948388
申请日：2010-11-17
申请人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
发明人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
IPC分类号： G11C11/21 , G11C7/12
CPC分类号： G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2013/0092
摘要： A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.

8. 发明申请

US20120120710A1 MEMORY SYSTEM WITH REVERSIBLE RESISTIVITY-SWITCHING USING PULSES OF ALTERNATRIE POLARITY 有权
标题翻译：具有可逆电阻切换的存储器系统使用ALTERNATRI极性脉冲
公开(公告)号：US20120120710A1
公开(公告)日：2012-05-17
申请号：US12948375
申请日：2010-11-17
申请人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
发明人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2013/0092 , G11C2213/72
摘要： A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.
摘要翻译：存储器系统包括多个非易失性存储元件，每个非易失性存储元件包括与可逆电阻切换材料串联的二极管（或其他转向装置）。存储器系统中的一个或多个电路通过将一个或多个非易失性存储元件的可逆电阻切换材料改变为第一电阻状态而对非易失性存储元件进行编程。存储系统还可以将一个或多个非易失性存储元件的可逆电阻切换材料从第一电阻状态改变到第二电阻状态，通过将一对或多对相反极性的电压条件（例如，脉冲）施加到相应的二极管（或其他转向装置）使得电流在二极管（或其他转向装置）中流动，而不会在击穿情况下操作二极管（或其他转向装置）。

9. 发明授权

US08355271B2 Memory system with reversible resistivity-switching using pulses of alternate polarity 有权
标题翻译：具有可逆电阻率切换的存储系统，使用交替极性的脉冲
公开(公告)号：US08355271B2
公开(公告)日：2013-01-15
申请号：US12948388
申请日：2010-11-17
申请人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
发明人： Peter Rabkin , George Samachisa , Roy E. Scheuerlein
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2013/0092
摘要： A memory system includes a plurality of non-volatile storage elements that each comprise a diode (or other steering device) in series with reversible resistance-switching material. One or more circuits in the memory system program the non-volatile storage elements by changing the reversible resistance-switching material of one or more non-volatile storage elements to a first resistance state. The memory system can also change the reversible resistance-switching material of one or more of the non-volatile storage elements from the first resistance state to a second resistance state by applying one or more pairs of opposite polarity voltage conditions (e.g., pulses) to the respective diodes (or other steering devices) such that current flows in the diodes (or other steering devices) without operating the diodes (or other steering devices) in breakdown condition.
摘要翻译：存储器系统包括多个非易失性存储元件，每个非易失性存储元件包括与可逆电阻切换材料串联的二极管（或其他转向装置）。存储器系统中的一个或多个电路通过将一个或多个非易失性存储元件的可逆电阻切换材料改变为第一电阻状态而对非易失性存储元件进行编程。存储系统还可以将一个或多个非易失性存储元件的可逆电阻切换材料从第一电阻状态改变到第二电阻状态，通过将一对或多对相反极性的电压条件（例如，脉冲）施加到相应的二极管（或其他转向装置）使得电流在二极管（或其他转向装置）中流动，而不会在击穿情况下操作二极管（或其他转向装置）。

10. 发明授权

US07250341B2 Flash memory device having poly spacers 失效
标题翻译：具有聚间隔物的闪存器件
公开(公告)号：US07250341B2
公开(公告)日：2007-07-31
申请号：US11100123
申请日：2005-04-05
申请人： Hsingya Arthur Wang , Kai-Cheng Chou , Peter Rabkin
发明人： Hsingya Arthur Wang , Kai-Cheng Chou , Peter Rabkin
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/115 , H01L27/11521
摘要： A non-volatile memory device includes a substrate having a first active region and a second active region. A first floating gate is provided over the first active region and having an edge, the first floating gate being made of a conductive material. A first spacer is connected to the edge of the first floating gate and being made of the same conductive material as that of the first floating gate. A control gate is provided proximate to the floating gate.
摘要翻译：非易失性存储器件包括具有第一有源区和第二有源区的衬底。第一浮动栅极设置在第一有源区上并具有边缘，第一浮栅由导电材料制成。第一间隔件连接到第一浮栅的边缘并由与第一浮栅相同的导电材料制成。控制门靠近浮动栅极设置。

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