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1. 发明申请

US20050205424A1 Apparatus and process for sensing fluoro species in semiconductor processing systems 有权
公开(公告)号：US20050205424A1
公开(公告)日：2005-09-22
申请号：US11057734
申请日：2005-02-14
申请人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , MacKenzie King , Ing-Shin Chen , Jeffrey Roeder
发明人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , MacKenzie King , Ing-Shin Chen , Jeffrey Roeder
IPC分类号： G01N33/00 , G01N27/26
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

2. 发明申请

US20050067304A1 Electrode assembly for analysis of metal electroplating solution, comprising self-cleaning mechanism, plating optimization mechanism, and/or voltage limiting mechanism 审中-公开
标题翻译：用于分析金属电镀液的电极组件，包括自清洁机构，电镀优化机构和/或电压限制机构
公开(公告)号：US20050067304A1
公开(公告)日：2005-03-31
申请号：US10672433
申请日：2003-09-26
申请人： MacKenzie King , Weihua Wang , Jianwen Han , Jeffrey Roeder , Steven Lurcott , Michele Stawasz
发明人： MacKenzie King , Weihua Wang , Jianwen Han , Jeffrey Roeder , Steven Lurcott , Michele Stawasz
IPC分类号： C25D21/12 , G01N20060101 , G01N27/26
CPC分类号： C25D21/12
摘要： The present invention relates to an electrode assembly useful for analyzing metal electroplating solutions. Such electrode assembly comprises a measuring electrode, preferably a rotating disc electrode or a microelectrode, and at least one of an in situ cleaning mechanism, a nucleation and metal growth optimization mechanism, and a voltage limiting mechanism. The present invention also relates to usage of such electrode assembly for in situ cleaning of the measuring electrode, nucleation and metal growth optimization, or voltage limitation.
摘要翻译：本发明涉及一种用于分析金属电镀溶液的电极组件。这种电极组件包括测量电极，优选旋转圆盘电极或微电极，以及原位清洁机构，成核和金属生长优化机构中的至少一个以及电压限制机构。本发明还涉及这种电极组件用于测量电极的原位清洗，成核和金属生长优化或电压限制的用途。

3. 发明申请

US20070181852A1 PASSIVATIVE CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER FILM PLANARIZATION 审中-公开
标题翻译：铜膜平面化学钝化机理抛光组合物
公开(公告)号：US20070181852A1
公开(公告)日：2007-08-09
申请号：US11733410
申请日：2007-04-10
申请人： Jun Liu , Peter Wrschka , David Bernhard , MacKenzie King , Michael Darsillo , Karl Boggs
发明人： Jun Liu , Peter Wrschka , David Bernhard , MacKenzie King , Michael Darsillo , Karl Boggs
IPC分类号： C09K13/00 , H01L21/302 , H01L21/461 , C03C25/68
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
摘要翻译：含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂组合。这样的CMP组合物有利地没有BTA，并且可用于抛光半导体衬底上的铜元素的表面，即使在存在大量铜离子的情况下也不会发生抛光铜的凹陷或其它不利平面化缺陷，例如，在CMP处理期间在铜/ CMP组合物界面处的本体CMP组合物中的Cu 2+ 2 +。

4. 发明申请

US20050241948A1 Methods and apparatuses for monitoring organic additives in electrochemical deposition solutions 有权
标题翻译：用于监测电化学沉积溶液中有机添加剂的方法和装置
公开(公告)号：US20050241948A1
公开(公告)日：2005-11-03
申请号：US10836546
申请日：2004-04-30
申请人： Jianwen Han , MacKenzie King , Weihua Wang , Glenn Tom , Jay Jung
发明人： Jianwen Han , MacKenzie King , Weihua Wang , Glenn Tom , Jay Jung
IPC分类号： C25D3/38 , C25D5/18 , C25D21/12 , C25D21/14 , G01N27/26 , G01N27/42
CPC分类号： C25D5/18 , C25D1/00 , C25D3/38 , C25D21/12 , C25D21/14 , G01N27/42 , H05K3/188 , H05K2203/163
摘要： The present invention relates in general to real-time analysis of electrochemical deposition (ECD) metal plating solutions, for the purpose of reducing plating defects and achieving high quality metal deposition. The present invention provides various new electrochemical analytical cell designs for reducing cross-contamination and increasing analytical signal strength. The present invention also provides improved plating protocols for increasing potential signal strength and reducing the time required for each measurement cycle. Further, the present invention provides new methods and algorithms for simultaneously determining concentrations of suppressor, accelerator, and leveler in a sample ECD solution within three experimental runs. A particularly preferred embodiment of the present invention provides a method for simultaneously determining concentrations of all three organic additives within a single experimental run by using a single analytical cell, while interactions between such additives are properly accounted for.
摘要翻译：本发明一般涉及电化学沉积（ECD）金属电镀溶液的实时分析，以减少电镀缺陷并实现高质量的金属沉积。本发明提供用于减少交叉污染和增加分析信号强度的各种新的电化学分析池设计。本发明还提供改进的电镀方案，用于增加潜在的信号强度并减少每个测量周期所需的时间。此外，本发明提供了用于在三个实验运行中同时测定样品ECD溶液中的抑制剂，促进剂和矫味剂的浓度的新方法和算法。本发明的一个特别优选的实施方案提供了一种通过使用单一分析电池同时测定单个实验运行中所有三种有机添加剂的浓度的方法，同时适当地考虑了这些添加剂之间的相互作用。

5. 发明申请

US20050270535A1 Methods and apparatuses for analyzing solder plating solutions 审中-公开
标题翻译：焊接电镀液分析方法和装置
公开(公告)号：US20050270535A1
公开(公告)日：2005-12-08
申请号：US11135311
申请日：2005-05-23
申请人： Peter Robertson , MacKenzie King , Monica Hilgarth , Cory Schomburg , Yuriy Tolmachev , Uwe Schoenrogge
发明人： Peter Robertson , MacKenzie King , Monica Hilgarth , Cory Schomburg , Yuriy Tolmachev , Uwe Schoenrogge
IPC分类号： C25D21/12 , G01N31/16 , G01N21/00
CPC分类号： C25D21/12 , G01N31/164
摘要： The present invention relates to methods and apparatus for determining concentrations of various inorganic or organic components in solder plating solutions, which include titration or parallel titration methods, direct potentiometry methods, calibration methods, and/or UV-Vis absorption analysis.
摘要翻译：本发明涉及用于确定焊料电镀溶液中各种无机或有机组分的浓度的方法和装置，包括滴定或平行滴定法，直接电位法，校准方法和/或UV-Vis吸收分析。

6. 发明申请

US20050109624A1 On-wafer electrochemical deposition plating metrology process and apparatus 审中-公开
标题翻译：片上电化学沉积电镀计量过程及仪器
公开(公告)号：US20050109624A1
公开(公告)日：2005-05-26
申请号：US10722174
申请日：2003-11-25
申请人： MacKenzie King , Jianwen Han
发明人： MacKenzie King , Jianwen Han
IPC分类号： C25D5/00 , C25D21/12
CPC分类号： C25D21/12 , C25D7/123
摘要： Electrochemical deposition (ECD) processes and systems used in the fabrication of products such as semiconductor devices, and more specifically an on-wafer process and apparatus of such type, in which the workpiece being plated is utilized as an electrode element in the monitoring operation, thereby substantially simplying the analytical monitoring metrology of ECD operation. The invention is usefully employed in copper electrodeposition involving control of organic additives concentrations in the copper plating bath, to achieve highly efficient copper metalizing of wafer substrates.
摘要翻译：在诸如半导体器件的产品的制造中使用的电化学沉积（ECD）工艺和系统，更具体地是在该监视操作中将被镀工件用作电极元件的这种类型的在晶片工艺和装置，从而大大简化了ECD操作的分析监测计量。本发明有效地用于铜电沉积中，涉及控制镀铜浴中的有机添加剂浓度，以实现晶片衬底的高效铜金属化。

7. 发明授权

US07300601B2 Passivative chemical mechanical polishing composition for copper film planarization 有权
标题翻译：钝化化学机械抛光组合物用于铜膜平面化
公开(公告)号：US07300601B2
公开(公告)日：2007-11-27
申请号：US10315641
申请日：2002-12-10
申请人： Jun Liu , Peter Wrschka , David Bernhard , MacKenzie King , Michael Darsillo , Karl Boggs
发明人： Jun Liu , Peter Wrschka , David Bernhard , MacKenzie King , Michael Darsillo , Karl Boggs
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , C23F11/141 , H01L21/3212
摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.
摘要翻译：含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂组合。这样的CMP组合物有利地没有BTA，并且可用于抛光半导体衬底上的铜元素的表面，即使在存在大量铜离子的情况下也不会发生抛光铜的凹陷或其它不利平面化缺陷，例如，在CMP处理期间在铜/ CMP组合物界面处的本体CMP组合物中的Cu 2+ 2 +。

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