专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4766472A Monolithic semiconductor structure of a laser and a field effect transistor 失效
标题翻译：激光和场效应晶体管的单片半导体结构
公开(公告)号：US4766472A
公开(公告)日：1988-08-23
申请号：US2407
申请日：1987-01-05
申请人： Francois Brillouet , Krishna Rao , Francois Alexandre
发明人： Francois Brillouet , Krishna Rao , Francois Alexandre
IPC分类号： H01L27/095 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/026 , H01L31/12 , H01L33/00 , H01S3/19
CPC分类号： H01S5/026 , H01L27/15 , H01S5/0208
摘要： A monolithic semiconductor structure of a laser and a field effect transistor applicable to telecommunications comprises, on a semiinsulating substrate, a semiconductor layer of Ga.sub.1-x Al.sub.x As, a N-doped semiconductor layer of Ga.sub.1-y Al.sub.y As, a semiconductor layer of Ga.sub.1-z Al.sub.z As, in which x and z vary from 0.2 to 0.7 and y from 0 to 0.15 and a GaAs semiconductor layer. In these four layers are formed one type P region and two type N regions, the type P region and one of the type N regions defining between them the active zone of the laser and the two type N regions defining between them the active zone of the transistor, respectively forming the transistor source and drain. The P region of the laser is equipped with an electrode and the transistor source and drain with ohmic contacts. A process for making the structure as also disclosed.
摘要翻译：可应用于通信的激光器和场效应晶体管的单片半导体结构在半绝缘衬底上包括Ga 1-x Al x As的半导体层，Ga 1-y Al y As的N掺杂半导体层，Ga 1-z Al zAs的半导体层，其中x和z从0.2变化到0.7，y从0到0.15以及GaAs半导体层。在这四个层中形成一个P型区域和两个N型区域，P型区域和N型区域中的一个在它们之间限定激光器的有效区域和两个N型区域之间限定它们的有效区域晶体管分别形成晶体管源极和漏极。激光器的P区域配备有电极，晶体管源极和漏极具有欧姆接触。还公开了制造结构的方法。

2. 发明申请

US20050056868A1 Semiconductor optical device on an indium phosphide substrate for long operating wavelengths 有权
标题翻译：磷化铟衬底上的半导体光学器件，用于长波长工作
公开(公告)号：US20050056868A1
公开(公告)日：2005-03-17
申请号：US10893140
申请日：2004-07-15
申请人： Jean-Louis Gentner , Francois Alexandre , Bruno Thedrez , Olivier Gauthier-Lafaye
发明人： Jean-Louis Gentner , Francois Alexandre , Bruno Thedrez , Olivier Gauthier-Lafaye
IPC分类号： H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01L29/768
CPC分类号： B82Y20/00 , H01S5/3201 , H01S5/3235 , H01S5/32366 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1-z-p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
摘要翻译：基于铟磷化物衬底或等效缓冲层的半导体光学器件，例如激光器或半导体光放大器（SOA）。器件的有源层基于常规的InGaAs（P）合金，但是另外包括N以便将工作波长增加到大于1.5μm，优选地增加到位于C波段或L波段中的波长。因此，活性层组合物可以表示为x1 = 0.48，y <= 1-z-p，z <= 0.05，p> = 0的In1-xGaxAsyNzPp。有源层可以包括量子阱或多量子阱，在这种情况下，其厚度优选小于晶格弛豫的临界厚度。在其它实施方案中，活性层是具有准体积性质的“块状”层。活性层可以有利地处于拉伸应力下，优选大约在1％和2.2％之间，以操纵轻质和重型孔带。有源层通常由诸如AlInAs或InGaAs（P）的合适的半导体合金制成的阻挡层限制。

3. 发明授权

US07109526B2 Semiconductor optical device on an indium phosphide substrate for long operating wavelengths 有权
标题翻译：磷化铟衬底上的半导体光学器件，用于长波长工作
公开(公告)号：US07109526B2
公开(公告)日：2006-09-19
申请号：US10893140
申请日：2004-07-15
申请人： Jean-Louis Gentner , Francois Alexandre , Bruno Thedrez , Olivier Gauthier-Lafaye
发明人： Jean-Louis Gentner , Francois Alexandre , Bruno Thedrez , Olivier Gauthier-Lafaye
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/3201 , H01S5/3235 , H01S5/32366 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1−z−p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
摘要翻译：基于铟磷化物衬底或等效缓冲层的半导体光学器件，例如激光器或半导体光放大器（SOA）。器件的有源层基于常规的InGaAs（P）合金，但是另外包括N以便将工作波长增加到大于1.5μm，优选地增加到位于C波段或L波段中的波长。因此，活性层组合物可以表示为：1-x Ga x N z N z， p = 0.48，y <= 1-zp，z <= 0.05，p> = 0。有源层可以包括量子阱或多量子阱，在这种情况下，其厚度优选小于晶格弛豫的临界厚度。在其它实施方案中，活性层是具有准体积性质的“块状”层。活性层可以有利地处于拉伸应力下，优选大约在1％和2.2％之间，以操纵轻质和重型孔带。有源层通常由诸如AlInAs或InGaAs（P）的合适的半导体合金制成的阻挡层限制。

4. 发明授权

US5412233A Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US5412233A
公开(公告)日：1995-05-02
申请号：US78585
申请日：1993-06-16
申请人： Chantal Dubon-Chevallier , Jean Dangla , Jean-Louis Benchimol , Francois Alexandre
发明人： Chantal Dubon-Chevallier , Jean Dangla , Jean-Louis Benchimol , Francois Alexandre
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L33/00
CPC分类号： H01L29/66318 , H01L29/7371
摘要： Process for producing a transistor, particularly a heterojunction bipolar transistor, of the type comprising the known stages consisting in producing layers forming the collector, base and emitter, as well as collector, base and emitter ohmic contacts. The emitter producing stage consists in depositing, on the base layer, two superposed layers making up the emitter, the first of which is a thin layer made up of a first material having a large energy gap, and the second made up of a second material also having a high energy gap. The base ohmic contact is deposited on the first layer of the emitter. The invention also relates to the transistors obtained.
摘要翻译：用于制造晶体管，特别是异质结双极晶体管的方法，其包括形成集电极，基极和发射极以及集电极，基极和发射极欧姆接触的产生层的已知阶段。发射极产生阶段包括在基底层上沉积构成发射极的两个重叠层，第一层是由具有大能隙的第一材料制成的薄层，第二层由第二材料构成也具有高能隙。基极欧姆接触沉积在发射极的第一层上。本发明还涉及所获得的晶体管。

5. 发明授权

US6022933A Process for the preparation of polyethylene 失效
标题翻译：制备聚乙烯的方法
公开(公告)号：US6022933A
公开(公告)日：2000-02-08
申请号：US911263
申请日：1997-08-14
申请人： Dale Andrew Wright , Theodore Randolph Engelmann , Antonios Nicholas , Francois Alexandre
发明人： Dale Andrew Wright , Theodore Randolph Engelmann , Antonios Nicholas , Francois Alexandre
IPC分类号： C08F2/34 , C08F4/69 , C08F10/02 , C08F210/02 , C08F210/16 , C08F4/78
CPC分类号： C08F10/02 , C08F210/16 , Y10S526/901 , Y10S526/905
摘要： A process for preparing high density polyethylene in the gas phase comprising contacting a mixture comprising ethylene and one or more alpha-olefins with the supported reaction product of a bis-hydrocarbylsilyl chromate and a hydrocarbylaluminum compound or a hydrocarbyl boron compound in a fluidized bed reactor having a recycle gas line, under particularly defined polymerization conditions, including, but not limited to, the following provisos:(i) oxygen and/or another catalyst poison is introduced into the reactor in the range of about 0.005 to about 0.5 part by volume of catalyst poison per million parts by volume of ethylene; and(ii) a relatively low boiling inert hydrocarbon is introduced into the recycle gas line in an amount sufficient to raise the dew point of the recycle gas, which is comprised of alpha-olefins and other reactor gases, and the recycle gas is partially condensed and recycled to the reactor where it promotes cooling by evaporation.
摘要翻译：一种在气相中制备高密度聚乙烯的方法，其包括将乙烯和一种或多种α-烯烃的混合物与双烃基甲硅烷基铬酸盐和烃基铝化合物或烃基硼化合物的负载反应产物在流化床反应器中接触，在特别限定的聚合条件下，包括但不限于以下条件：（i）将氧和/或另一种催化剂毒物引入反应器中，其量为约0.005至约0.5体积份每百万份乙烯的催化剂毒物; 和（ii）相对低沸点的惰性烃以足以提高由α-烯烃和其它反应器气体组成的再循环气体的露点的量引入循环气体管线中，并且循环气体被部分冷凝并再循环到反应器中，通过蒸发促进冷却。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式