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1. 发明申请

US20060110677A1 Photoresist composition for deep UV and process thereof 失效
公开(公告)号：US20060110677A1
公开(公告)日：2006-05-25
申请号：US10994745
申请日：2004-11-22
申请人： Francis Houlihan , Ralph Dammel , Andrew Romano , Munirathna Padmanaban , M. Rahman
发明人： Francis Houlihan , Ralph Dammel , Andrew Romano , Munirathna Padmanaban , M. Rahman
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.

2. 发明申请

US20070015084A1 Photoactive compounds 有权
标题翻译：光活性化合物
公开(公告)号：US20070015084A1
公开(公告)日：2007-01-18
申请号：US11355762
申请日：2006-02-16
申请人： M. Rahman , Francis Houlihan , Munirathna Padmanaban , SangHo Lee , Ralph Dammel , David Rentkiewicz , Clement Anyadiegwu
发明人： M. Rahman , Francis Houlihan , Munirathna Padmanaban , SangHo Lee , Ralph Dammel , David Rentkiewicz , Clement Anyadiegwu
IPC分类号： G03C1/00
CPC分类号： C07D333/46 , C07C25/18 , C07C309/05 , C07C309/17 , C07C381/12 , C07D333/76 , Y10S430/114
摘要： The present application relates to a compound of formula A-X-B, where (i) A-X-B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R500—SO3− or (ii) A-X-B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R500, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.
摘要翻译：本申请涉及式A-X-B化合物，其中（i）A-X-B形成离子化合物艾希Bi，其中A 1和B 2各自为有机鎓阳离子; 和Xi是下式的阴离子：（ii）AXB形成非离子化合物Ac-Xc-Bc 其中Ai，Bi，Q，R 500，Ac，Bc和Xc在本文中定义。这些化合物可用作光敏材料。

3. 发明授权

US5843319A Positive-working radiation-sensitive mixture 失效
标题翻译：正面工作的辐射敏感混合物
公开(公告)号：US5843319A
公开(公告)日：1998-12-01
申请号：US902072
申请日：1997-07-29
申请人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
发明人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
IPC分类号： G03F7/004 , G03F7/039 , B01D15/00 , B01J39/00 , C02F1/42
CPC分类号： G03F7/0045 , G03F7/039
摘要： A process for producing a solution of a basic or non-basic sulfonium compound (A) of formulae II-V: ##STR1## wherein R.sup.5, R.sup.6 and R.sup.7 each independently represent a C.sub.1 -C.sub.18 alkyl, aryl or heteroaryl group or an aryl group mono-, di- or tri-substituted with an alkyl, an alkylaryl, an aryl, a halogen, an alkoxy, a phenoxy, a thiophenol, a phenylsulfonyl or a phenylsulphenyl; Y represents (CH.sub.2).sub.n (wherein n is 0 or 1), O or S; R.sup.8 and R.sup.9 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; R.sup.10 and R.sup.11 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; n is 5 or 6; and X.sub.2.sup.- represents a basic anion having a pK.sub.B value of -3 to +5; comprising the steps of: (a) dissolving a sulfonium salt (B) in a metal-ion free polar or non-polar solvent to form a solution, said sulfonium salt (B) being selected from said formulae II-V, wherein R.sup.5 to R.sup.11, Y and n of said sulfonium salt (B) have the sane meaning as above and X.sub.2.sup.- represents a non-nucleophilic anion; (b) contacting said solution for a sufficient amount of time with a basic ion-exchange resin having a quaternary ammonium group to replace the anion of (B) with a hydroxide ion and to form a sulfonium hydroxide solution; (c) separating said sulfonium hydroxide solution from the resin; and optionally (d) adding an active hydrogen containing compound or its base-labile precursor to said sulfonium hydroxide solution to yield a solution of the sulfonium compound (A) wherein X.sub.2.sup.- represents a basic anion other than a hydroxy ion.
摘要翻译：制备式II-V的碱性或非碱性锍化合物（A）的溶液的方法：[SR5R6R7] + X2-Ⅱ其中R5，R6和R7各自独立地独立地表示C1-C18烷基，芳基或杂芳基或被烷基，烷基芳基，芳基，卤素，烷氧基，苯氧基，苯硫酚，苯基磺酰基或苯基磺酰基单 - ，二 - 或三 - 取代的芳基苯基磺酰基; Y表示（CH 2）n（其中n为0或1），O或S; R8和R9代表C1-C4烷基，烷氧基或卤素; R10和R11表示C1-C4烷基，烷氧基或卤素; n为5或6; X2-表示pKB值为-3〜+5的碱性阴离子; 包括以下步骤：（a）将锍盐（B）溶解在无金属离子的极性或非极性溶剂中以形成溶液，所述锍盐（B）选自所述式II-V，其中R5至所述锍盐（B）的R 11，Y和n具有如上所述的正义，X2-表示非亲核阴离子; （b）用具有季铵基团的碱性离子交换树脂将所述溶液接触足够的时间以用氢氧根离子代替（B）的阴离子并形成氢氧化锍溶液; （c）从树脂中分离出氢氧化锍溶液; 和任选地（d）在所述氢氧化锍溶液中加入含活性氢的化合物或其碱不稳定的前体，得到其中X2代表羟基离子以外的碱性阴离子的锍化合物（A）的溶液。

4. 发明授权

US5525453A Positive-working radiation-sensitive mixture 失效
标题翻译：正面工作的辐射敏感混合物
公开(公告)号：US5525453A
公开(公告)日：1996-06-11
申请号：US196810
申请日：1994-02-15
申请人： Klaus J. Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
发明人： Klaus J. Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
IPC分类号： G03F7/004 , G03F7/039 , G03F7/021
CPC分类号： G03F7/0045 , G03F7/039
摘要： A novel positive-working radiation-sensitive mixture having a high sensitivity to radiation in a short-wavelength UV region is provided which can be developed in an aqueous alkaline solution, has a stable acid latent image and is used for the production of a semiconductor. The mixture comprises, as indispensable components, a) a binder insoluble in water but soluble in an aqueous alkaline solution, b) a compound having at least one bond cleavable with an acid, c) a compound capable of producing an acid upon radiation, and d.sub.1) a basic ammonium compound or d.sub.2) a basic sulfonium compound.
摘要翻译：提供了一种在短波长UV区域对辐射具有高灵敏度的新型正性辐射敏感性混合物，其可以在碱性水溶液中显影，具有稳定的酸性潜像并用于制备半导体。该混合物作为不可缺少的组分包含a）不溶于水但可溶于碱性水溶液的粘合剂，b）具有至少一个可与酸分离的键的化合物，c）能够在辐射时产生酸的化合物，和 d1）碱性铵化合物或d2）碱性锍化合物。

5. 发明申请

US20060088788A1 Composition for coating over a photoresist pattern 有权
公开(公告)号：US20060088788A1
公开(公告)日：2006-04-27
申请号：US10973633
申请日：2004-10-26
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph Dammel
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph Dammel
IPC分类号： G03C5/00
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

6. 发明申请

US20070111138A1 Photoactive compounds 有权
标题翻译：光活性化合物
公开(公告)号：US20070111138A1
公开(公告)日：2007-05-17
申请号：US11355400
申请日：2006-02-16
申请人： M. Rahman , Munirathna Padmanaban
发明人： M. Rahman , Munirathna Padmanaban
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , C07C309/06 , C07C309/10 , C07C311/48 , C07C317/04 , C07C381/12 , C07C2603/74 , C08K5/375 , G03F7/0392 , G03F7/0395 , Y10S430/114 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： The present invention relates to novel photoacid generators.
摘要翻译：本发明涉及新型光致酸发生剂。

7. 发明申请

US20080035556A1 PROCESS FOR PRODUCING FILM FORMING RESINS FOR PHOTORESIST COMPOSITIONS 审中-公开
标题翻译：用于生产胶片组合物的薄膜形成树脂的方法
公开(公告)号：US20080035556A1
公开(公告)日：2008-02-14
申请号：US11873525
申请日：2007-10-17
申请人： Munirathna Padmanaban , M. Rahman
发明人： Munirathna Padmanaban , M. Rahman
IPC分类号： B01D69/12 , B01D71/16 , B01D71/40
CPC分类号： G03F7/0397 , B01D39/1623 , B01D39/18 , G03F7/16 , Y10T442/20 , Y10T442/2139 , Y10T442/2861 , Y10T442/2869
摘要： The present invention provides a method of reducing metals in solutions of film forming resins and a related filter sheet.
摘要翻译：本发明提供一种在成膜树脂和相关的过滤片的溶液中还原金属的方法。

8. 发明申请

US20060102554A1 Process for producing film forming resins for photoresist compositions 审中-公开
标题翻译：用于制造光致抗蚀剂组合物的成膜树脂的方法
公开(公告)号：US20060102554A1
公开(公告)日：2006-05-18
申请号：US10988246
申请日：2004-11-12
申请人： Munirathna Padmanaban , M. Rahman
发明人： Munirathna Padmanaban , M. Rahman
IPC分类号： B32B5/02 , B32B5/22 , B32B27/02 , B32B23/02 , B01D29/00 , B01D24/00 , B01D69/08 , B01D71/10 , B01D39/00 , B01D39/02
CPC分类号： G03F7/0397 , B01D39/1623 , B01D39/18 , G03F7/16 , Y10T442/20 , Y10T442/2139 , Y10T442/2861 , Y10T442/2869
摘要： The present invention provides a method of reducing metals in solutions of film forming resins and a related filter sheet.
摘要翻译：本发明提供一种在成膜树脂和相关的过滤片的溶液中还原金属的方法。

9. 发明申请

US20050271974A1 Photoactive compounds 审中-公开
标题翻译：光活性化合物
公开(公告)号：US20050271974A1
公开(公告)日：2005-12-08
申请号：US10863042
申请日：2004-06-08
申请人： M. Rahman , Woo-Kyu Kim , Munirathna Padmanaban , Sangho Lee
发明人： M. Rahman , Woo-Kyu Kim , Munirathna Padmanaban , Sangho Lee
IPC分类号： C07C381/12 , G03C1/492 , G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , C07C381/12 , G03F7/0046
摘要： The present invention relates to novel photoacid generators.
摘要翻译：本发明涉及新型光致酸发生剂。

10. 发明授权

US08900797B2 Developable bottom anti-reflective coating 有权
标题翻译：可开发的底部防反射涂层
公开(公告)号：US08900797B2
公开(公告)日：2014-12-02
申请号：US13627599
申请日：2012-09-26
申请人： Shigemasa Nakasugi , Shinji Miyazaki , Munirathna Padmanaban , Alberto D. Dioses
发明人： Shigemasa Nakasugi , Shinji Miyazaki , Munirathna Padmanaban , Alberto D. Dioses
IPC分类号： C07D251/38 , C07D213/69 , C07D213/70 , C07D239/60 , C07D251/30 , G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , C07D251/30 , C07D251/38 , G03F7/091
摘要： The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen-containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. The cross-linking agent of the formula (1) can be produced by reaction of a nitrogen-containing aromatic compound, a halogen compound having a vinyloxy group or N-methoxymethylamide group and a basic compound.
摘要翻译：本发明提供能够防止从底部抗反射涂层形成浮渣的交联剂，并且还提供了用于形成含有该试剂的底部防反射涂层的组合物。交联剂是具有至少一个乙烯基氧基或N-甲氧基甲基酰胺基的含氮芳香族化合物，该组合物含有交联剂。式（1）的交联剂可以通过含氮芳族化合物，具有乙烯氧基的卤素化合物或N-甲氧基甲基酰胺基和碱性化合物的反应来制备。

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