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1. 发明申请

US20060281306A1 Carbon nanotube interconnect contacts 审中-公开
标题翻译：碳纳米管互连触点
公开(公告)号：US20060281306A1
公开(公告)日：2006-12-14
申请号：US11148614
申请日：2005-06-08
申请人： Florian Gstrein , Adrien Lavoie , Valery Dubin , Juan Dominguez
发明人： Florian Gstrein , Adrien Lavoie , Valery Dubin , Juan Dominguez
IPC分类号： H01L21/44
CPC分类号： H01L23/53276 , H01L21/76877 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an interconnect on a semiconductor substrate comprises providing at least one carbon nanotube within a trench, etching at least one portion of the carbon nanotube to create an opening, conformally depositing a metal layer on the carbon nanotube through the opening, and forming a metallized contact at the opening that is substantially coupled to the carbon nanotube. The metal layer may be conformally deposited on the carbon nanotube using an atomic layer deposition process or an electroless plating process. Multiple metal layers may be deposited to substantially fill voids within the carbon nanotube. The electroless plating process may use a supercritical liquid as the medium for the plating solution. The wetting behavior of the carbon nanotube may be modified prior to the electroless plating process to increase the hydrophilicity of the carbon nanotube.
摘要翻译：一种用于在半导体衬底上形成互连的方法包括在沟槽内提供至少一个碳纳米管，蚀刻碳纳米管的至少一部分以形成开口，通过开口在碳纳米管上共形沉积金属层，并形成在开口处的金属化接触基本上与碳纳米管耦合。可以使用原子层沉积工艺或无电镀工艺将金属层共形沉积在碳纳米管上。可以沉积多个金属层以基本上填充碳纳米管内的空隙。化学镀处理可以使用超临界液体作为电镀溶液的介质。可以在化学镀处理之前改变碳纳米管的润湿性能，以增加碳纳米管的亲水性。

2. 发明申请

US20070155158A1 Carbon nanotube interconnect structures 有权
标题翻译：碳纳米管互连结构
公开(公告)号：US20070155158A1
公开(公告)日：2007-07-05
申请号：US11325774
申请日：2005-12-30
申请人： Florian Gstrein , Valery Dubin , Juan Dominguez , Adrien Lavoie
发明人： Florian Gstrein , Valery Dubin , Juan Dominguez , Adrien Lavoie
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76838 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/75 , H01L2924/00
摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.
摘要翻译：一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

3. 发明申请

US20070075427A1 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US20070075427A1
公开(公告)日：2007-04-05
申请号：US11240005
申请日：2005-09-30
申请人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
发明人： Adrien Lavoie , Valery Dubin , Juan Dominguez , Kevin O'Brien , Steven Johnston , John Peck , David Thompson , David Peters
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

4. 发明申请

US20070105375A1 Catalytic nucleation monolayer for metal seed layers 有权
标题翻译：催化成核单层金属种子层
公开(公告)号：US20070105375A1
公开(公告)日：2007-05-10
申请号：US11269402
申请日：2005-11-07
申请人： Adrien Lavoie , Arnel Fajardo , Valery Dubin
发明人： Adrien Lavoie , Arnel Fajardo , Valery Dubin
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76873 , H01L21/76876
摘要： A method of forming a copper interconnect on a substrate comprises providing a substrate that includes a dielectric layer and a trench etched into the dielectric layer, depositing a barrier layer within the trench, using a palladium immobilization process to form a metal catalyst layer on the barrier layer, activating the metal catalyst layer, and using a vapor deposition process to deposit a copper seed layer onto the metal catalyst layer. The vapor deposition process may include PVD, CVD, or ALD. An electroplating process or an electroless plating process may then be used to deposit a bulk copper layer onto the copper seed layer to fill the trench. A planarization process may follow to form the final interconnect structure.
摘要翻译：在衬底上形成铜互连的方法包括提供衬底，该衬底包括介电层和蚀刻到电介质层中的沟槽，使用钯固定法在阻挡层中沉积势垒层，以在阻挡层上形成金属催化剂层层，激活金属催化剂层，并使用气相沉积工艺将铜籽晶层沉积到金属催化剂层上。气相沉积工艺可以包括PVD，CVD或ALD。然后可以使用电镀工艺或无电电镀工艺将块状铜层沉积到铜种子层上以填充沟槽。可以进行平面化处理以形成最终的互连结构。

5. 发明申请

US20080194105A1 ORGANOMETALLIC PRECURSORS FOR SEED/BARRIER PROCESSES AND METHODS THEREOF 有权
标题翻译：种子/障碍物过程的有机前体及其方法
公开(公告)号：US20080194105A1
公开(公告)日：2008-08-14
申请号：US11675066
申请日：2007-02-14
申请人： Juan Dominguez , Adrien Lavoie , John Plombon , Joseph Han , Harsono Simka , David Thompson , John Peck
发明人： Juan Dominguez , Adrien Lavoie , John Plombon , Joseph Han , Harsono Simka , David Thompson , John Peck
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , H01L21/28562 , H01L21/76873 , H01L21/76874
摘要： Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.
摘要翻译：本文公开了在种子/屏障应用中沉积在底物上的有机金属前体和方法。在一些实施方案中，有机金属前体是含钌，含钽前体或其组合，并且可以通过原子层沉积，化学气相沉积和/或物理气相沉积来沉积。

6. 发明申请

US20070264816A1 Copper alloy layer for integrated circuit interconnects 审中-公开
标题翻译：铜合金层用于集成电路互连
公开(公告)号：US20070264816A1
公开(公告)日：2007-11-15
申请号：US11434450
申请日：2006-05-12
申请人： Adrien Lavoie , Juan Dominguez , John Plombon , Joseph Han , Harsono Simka
发明人： Adrien Lavoie , Juan Dominguez , John Plombon , Joseph Han , Harsono Simka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76846 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/76858 , H01L21/76877
摘要： A method for forming a metal interconnect comprises providing a dielectric layer on a substrate within a reaction chamber where the dielectric layer includes a trench, conformally depositing a barrier layer on the dielectric layer within the trench, conformally depositing a Cu—Al alloy layer on the barrier layer within the trench, depositing a copper layer to fill the trench, and planarizing the copper layer to form the metal interconnect. The Cu—Al alloy layer may be formed by sequential ALD or CVD deposition of an aluminum layer and a copper layer followed by an annealing process. Alternately, the Cu—Al alloy layer may be formed in-situ by co-pulsing the aluminum and copper precursors.
摘要翻译：一种用于形成金属互连的方法包括在反应室内的衬底上提供电介质层，其中电介质层包括沟槽，在沟槽内的电介质层上共形沉积阻挡层，在其上共形沉积Cu-Al合金层阻挡层，沉积铜层以填充沟槽，以及平坦化铜层以形成金属互连。 Cu-Al合金层可以通过铝层和铜层的连续ALD或CVD沉积，然后进行退火工艺来形成。或者，可以通过共同脉冲铝和铜前体原位形成Cu-Al合金层。

7. 发明授权

US07851360B2 Organometallic precursors for seed/barrier processes and methods thereof 有权
标题翻译：用于种子/屏障过程的有机金属前体及其方法
公开(公告)号：US07851360B2
公开(公告)日：2010-12-14
申请号：US11675066
申请日：2007-02-14
申请人： Juan Dominguez , Adrien Lavoie , John Plombon , Joseph Han , Harsono Simka , David Thompson , John Peck
发明人： Juan Dominguez , Adrien Lavoie , John Plombon , Joseph Han , Harsono Simka , David Thompson , John Peck
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , H01L21/28562 , H01L21/76873 , H01L21/76874
摘要： Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.
摘要翻译：本文公开了在种子/屏障应用中沉积在底物上的有机金属前体和方法。在一些实施方案中，有机金属前体是含钌，含钽前体或其组合，并且可以通过原子层沉积，化学气相沉积和/或物理气相沉积来沉积。

8. 发明申请

US20060223300A1 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 有权
标题翻译：用于金属膜在互连应用中的化学相沉积的有机金属前体
公开(公告)号：US20060223300A1
公开(公告)日：2006-10-05
申请号：US11096860
申请日：2005-03-31
申请人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
发明人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L21/76873
摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
摘要翻译：在此描述利用有机金属前体形成薄膜的化学相沉积方法。有机金属前体可以包括单个金属中心或多个金属中心。化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层。

9. 发明申请

US20070207611A1 Noble metal precursors for copper barrier and seed layer 审中-公开
标题翻译：铜屏障和种子层的贵金属前体
公开(公告)号：US20070207611A1
公开(公告)日：2007-09-06
申请号：US11367160
申请日：2006-03-03
申请人： Adrien Lavoie , Juan Dominguez , Aaron Budrevich
发明人： Adrien Lavoie , Juan Dominguez , Aaron Budrevich
IPC分类号： H01L21/44
CPC分类号： C23C28/00 , C23C28/322 , C23C28/34 , C23C28/36
摘要： A copper interconnect oh a semiconductor substrate comprises a dielectric layer having a trench, a noble metal layer on the dielectric layer within the trench, and a copper interconnect on the noble metal layer. The noble metal layer has a thickness that is between 3 Å and 100 Å and a density that is greater than or equal to 5 g/cm3. The copper interconnect may be formed by etching a trench into the dielectric layer, pulsing a noble metal containing precursor proximate to the semiconductor substrate, and pulsing a reactive gas proximate to the semiconductor substrate, wherein the reactive gas reacts with the precursor to form a noble metal layer on the dielectric layer. A copper layer may then be deposited atop the noble metal layer and planarized. The noble metal layer functions as a barrier to copper diffusion and provides a surface upon which the copper metal can nucleate.
摘要翻译：半导体衬底的铜互连包括具有沟槽的电介质层，沟槽内介电层上的贵金属层和贵金属层上的铜互连。贵金属层的厚度在3埃至100埃之间，密度大于或等于5克/平方厘米。铜互连可以通过将沟槽蚀刻到电介质层中，使靠近半导体衬底的含贵金属的前体脉冲，并且使靠近半导体衬底的反应性气体脉冲，其中反应气体与前体反应形成贵金属电介质层上的金属层。然后可以将铜层沉积在贵金属层上方并平坦化。贵金属层用作铜扩散的阻挡层，并提供铜金属可以在其上成核的表面。

10. 发明申请

US20070202678A1 Catalytically enhanced atomic layer deposition process 有权
标题翻译：催化增强原子层沉积过程
公开(公告)号：US20070202678A1
公开(公告)日：2007-08-30
申请号：US11365082
申请日：2006-02-28
申请人： John Plombon , Adrien Lavoie , Juan Dominguez , Joseph Han , Harsono Simka
发明人： John Plombon , Adrien Lavoie , Juan Dominguez , Joseph Han , Harsono Simka
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45534 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A method for carrying out a damascene process to form an interconnect comprises providing a semiconductor substrate having a trench etched into a dielectric layer, wherein the trench includes a barrier layer and an adhesion layer, depositing a copper seed layer onto the adhesion layer using an ALD process, depositing an iodine catalyst layer onto the copper seed layer using an ALD process, and depositing a copper layer onto the copper seed layer using an ALD process. The iodine catalyst layer causes the copper layer to fill the trench by way of a bottom-up fill mechanism. The trench fill is performed using a single ALD process, which minimizes the creation of voids and seams in the final copper interconnect.
摘要翻译：执行镶嵌工艺以形成互连的方法包括提供具有蚀刻到电介质层中的沟槽的半导体衬底，其中所述沟槽包括阻挡层和粘合层，使用ALD将铜籽晶层沉积到粘附层上工艺，使用ALD工艺将碘催化剂层沉积到铜籽晶层上，并使用ALD工艺将铜层沉积到铜籽晶层上。碘催化剂层使铜层通过自下而上的填充机制填充沟槽。使用单个ALD工艺来执行沟槽填充，其最小化最终铜互连中的空隙和接缝的产生。

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