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1. 发明授权

US10773725B1 Tire-road friction estimation and mapping 有权
公开(公告)号：US10773725B1
公开(公告)日：2020-09-15
申请号：US16108792
申请日：2018-08-22
申请人： Filip Ilievski , Matisse J. Milovich , Christopher M. Miller , Budhadipta Dan , Jack E. Graves , Evan C. Cull , Irene Perali , Mira S. Misra , Sheila P. Nabanja , Lucian Ion , James J. Reuther , Christy F. Cull
发明人： Filip Ilievski , Matisse J. Milovich , Christopher M. Miller , Budhadipta Dan , Jack E. Graves , Evan C. Cull , Irene Perali , Mira S. Misra , Sheila P. Nabanja , Lucian Ion , James J. Reuther , Christy F. Cull
IPC分类号： G08G1/00 , B60W40/068
摘要： A method includes determining temperature values for roadway areas ahead of a vehicle, determining lubricant state values for the roadway areas, and determining lubricant thickness values for the roadway areas. The method also includes determining a tire-road friction estimate for each of the roadway areas using the temperature values, the lubricant state values, and the lubricant thickness values, and defining a friction map that relates the tire-road friction estimates to the roadway areas. The method also includes determining a motion plan based at least in part on the friction map, and controlling the vehicle based on the motion plan.

2. 发明授权

US06900474B2 Light emitting devices with compact active regions 有权
公开(公告)号：US06900474B2
公开(公告)日：2005-05-31
申请号：US10632720
申请日：2003-07-31
申请人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
发明人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
IPC分类号： H01L33/10 , H01L33/20 , H01L33/40 , H01L51/52 , H01L33/00
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405 , H01L51/5265
摘要： A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.

3. 发明授权

US06833564B2 Indium gallium nitride separate confinement heterostructure light emitting devices 失效
标题翻译：氮化铟镓分离限制异质结构发光器件
公开(公告)号：US06833564B2
公开(公告)日：2004-12-21
申请号：US10033349
申请日：2001-11-02
申请人： Yu-Chen Shen , Mira S. Misra
发明人： Yu-Chen Shen , Mira S. Misra
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/02
摘要： A III-nitride light emitting device including a substrate, a first conductivity type layer overlying the substrate, a spacer layer overlying the first conductivity type layer, an active region overlying the spacer layer, a cap layer overlying the active region, and a second conductivity type layer overlying the cap layer is disclosed. The active region includes a quantum well layer and a barrier layer containing indium. The barrier layer may be doped with a dopant of first conductivity type and may have an indium composition between 1% and 15%. In some embodiments, the light emitting device includes an InGaN lower confinement layer formed between the first conductivity type layer and the active region. In some embodiments, the light emitting device includes an InGaN upper confinement layer formed between the second conductivity type layer and the active region. In some embodiments, the light emitting device includes an InGaN cap layer formed between the upper confinement layer and the active region.
摘要翻译：一种III族氮化物发光器件，包括衬底，覆盖衬底的第一导电类型层，覆盖第一导电类型层的间隔层，覆盖间隔层的有源区，覆盖有源区的覆盖层和第二导电性公开了覆盖盖层的类型层。有源区包括量子阱层和含有铟的势垒层。阻挡层可以掺杂有第一导电类型的掺杂剂，并且可以具有1％至15％的铟组成。在一些实施例中，发光器件包括形成在第一导电类型层和有源区之间的InGaN下约束层。在一些实施例中，发光器件包括形成在第二导电类型层和有源区之间的InGaN上约束层。在一些实施例中，发光器件包括形成在上约束层和有源区之间的InGaN帽层。

4. 发明授权

US07719018B2 Light emitting devices with compact active regions 有权
标题翻译：具有紧凑有源区域的发光器件
公开(公告)号：US07719018B2
公开(公告)日：2010-05-18
申请号：US11139325
申请日：2005-05-27
申请人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
发明人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405 , H01L51/5265
摘要： A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.
摘要翻译：发光器件包括第一导电类型的区域，第二导电类型的区域，有源区域和电极。有源区域设置在第一导电类型的区域和第二导电类型的区域之间，并且第二导电类型的区域设置在有源区域和电极之间。有源区具有小于或等于约0.25λn的总厚度，并且具有距离电极约0.6λn至0.75λn的部分，其中λn是由第二导电类型区域中的有源区发射的光的波长。在一些实施例中，有源区域包括多个簇，其中第一簇的一部分位于距离电极约0.6λn和0.75λn之间，第二簇的一部分位于离电极约1.2λn和1.35λn之间。

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