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    • 1. 发明授权
    • Method of anti-corrosive protection of silicon carbide products
    • 碳化硅产品的防腐蚀保护方法
    • US4623517A
    • 1986-11-18
    • US635487
    • 1984-07-31
    • Felicjan J. BiolikZygmunt A. Morys
    • Felicjan J. BiolikZygmunt A. Morys
    • C04B35/565C04B41/50C04B41/85B01J11/18
    • C04B41/009C04B35/565C04B41/50C04B41/85
    • The invention relates to a not as yet considered kind of corrosion of products made of silicon carbide working in elevated temperatures and discloses a method of preventing this kind of corrosion which begins already at the moderate temperature of about 550.degree. C. and is caused by the formation of carbon monoxide in the pores of the interior of the silicon carbide products in conditions of limited penetration of oxygen into these pores. The disclosed method of preventing this kind of corrosion consists in shielding part of the surface of the mentioned silicon carbide products by perfectly gastight shields or by a protective atmosphere or inversely in enhancing the access of oxygen into the pores of the mentioned product thus diluting the carbon monoxide being formed, by enlarging the number of open pores so that an open porosity of the product exceeding about 40 percent is reached or by providing uniformly distributed channels in the silicon carbide product the total volume of channels being at least about 10 percent of the outer volume of the product.
    • 本发明涉及在高温下工作的碳化硅制成的产品的一种尚未考虑的腐蚀,并且公开了一种防止这种腐蚀的方法,该方法已经在约550℃的中等温度下开始,并且由 在有限的氧渗入这些孔隙的条件下,在碳化硅产品内孔的孔中形成一氧化碳。 所公开的防止这种腐蚀的方法包括通过完美的气密屏蔽或保护性气氛来屏蔽所述碳化硅产品的表面的一部分,或者相反地增强氧气进入所述产品的孔隙,从而稀释碳 通过扩大开孔数量,使产品的开放孔隙率达到大约40%,或者通过在碳化硅产品中提供均匀分布的通道,通道的总体积至少为外部的约10% 产品的体积。