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1. 发明授权

US5457709A Unipolar semiconductor laser 失效
标题翻译：单极半导体激光器
公开(公告)号：US5457709A
公开(公告)日：1995-10-10
申请号：US223341
申请日：1994-04-04
申请人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Serge Luryi , Carlo Sirtori , Deborah L. Sivco
发明人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Serge Luryi , Carlo Sirtori , Deborah L. Sivco
IPC分类号： H01S3/106 , H01S5/062 , H01S5/12 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3402 , H01S3/1068 , H01S5/0614 , H01S5/06243 , H01S5/1228 , H01S5/3419
摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.
摘要翻译：根据我们所知，本应用公开了第一单极激光器。激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。然而，其他能量松弛区也是可能的。单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。讨论了实现这一点的手段。

2. 发明授权

US5502787A Article comprising a semiconductor waveguide structure 失效
标题翻译：文章包括半导体波导结构
公开(公告)号：US5502787A
公开(公告)日：1996-03-26
申请号：US445821
申请日：1995-05-22
申请人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
发明人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
IPC分类号： G02B6/12 , G02B6/122 , G02F1/025 , H01S5/00 , H01S5/10 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34 , G02B6/02 , G02B6/16
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/1228 , H01S5/20 , H01S5/305 , H01S5/2004 , H01S5/3211 , H01S5/3402
摘要： Articles according to the invention include a semiconductor waveguide having a core and a cladding, with the cladding including doped semiconductor material. The doping level is selected such that both the real part n and the imaginary part k of the complex refractive index of the doped material are relatively low, exemplarily n
摘要翻译：根据本发明的制品包括具有芯和包层的半导体波导，其中包层包含掺杂的半导体材料。选择掺杂级别使得掺杂材料的复折射率的实部n和虚部k都相对较低，示例性地为n <0.5εINFINITY 1/2和k <1，其中εINININITY为高材料的频率晶格介电常数。掺杂水平的适当选择可以导致引导辐射的改进的限制，而不会导致辐射的衰减的过度增加。本发明示例性地体现在长波长（DIFFERENCE8.5μm）量子级联激光器中。预期其他实施例。

3. 发明授权

US5570386A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5570386A
公开(公告)日：1996-10-29
申请号：US509409
申请日：1995-07-31
申请人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
发明人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
IPC分类号： H01L33/00 , H01L21/20 , H01S3/106 , H01S5/00 , H01S5/062 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3402 , H01S3/1068 , H01S5/0614 , H01S5/06243 , H01S5/1228 , H01S5/3419 , Y10S977/759 , Y10S977/833 , Y10S977/951
摘要： The disclosed unipolar quantum cascade (QC) laser comprises a multiplicity of essentially identical active regions, with adjacent active regions separated by a superlattice carrier injection/relaxation region. A given active region contains a single quantum well with at least two electron states. Lasing is obtained without global intersubband population inversion. Instead, there is believed to exist local population inversion in a small region of k-space near k=0, corresponding to electron energies approximately within an optical phonon energy (.about.35 meV) from the bottom of the lower subband. A novel design feature that can be used to improve the thermal characteristics of substantially any QC laser is also disclosed.
摘要翻译：所公开的单极子量子级联（QC）激光器包括多个基本上相同的有源区域，其中相邻的有源区域由超晶格载流子注入/弛豫区域分隔开。给定的有源区域包含具有至少两个电子态的单量子阱。没有全局子带数反转获得激光。相反，相信在k = 0附近的k空间的小区域中存在对应于大约在从下子带底部的光声子能量（DIFFERENCE 35meV）内的电子能量的局部群体反演。还公开了可用于改善基本上任何QC激光器的热特性的新颖设计特征。

4. 发明授权

US5509025A Unipolar semiconductor laser 失效
标题翻译：单极半导体激光器
公开(公告)号：US5509025A
公开(公告)日：1996-04-16
申请号：US371000
申请日：1995-01-09
申请人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
发明人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Albert L. Hutchinson , Carlo Sirtori , Deborah L. Sivco
IPC分类号： H01S5/00 , H01S3/106 , H01S5/062 , H01S5/12 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3402 , H01S3/1068 , H01S5/0614 , H01S5/06243 , H01S5/1228 , H01S5/1234 , H01S5/3419
摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. Disclosed are also embodiments that rely primarily on "vertical" transitions in a given quantum well. Such lasers preferably comprise superlattice Bragg reflectors. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.
摘要翻译：根据我们所知，本应用公开了第一单极激光器。激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。然而，其他能量松弛区也是可能的。公开的还是主要依赖于给定量子阱中的“垂直”跃迁的实施例。这种激光器优选地包括超晶格布拉格反射器。单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。讨论了实现这一点的手段。

5. 发明授权

US5311009A Quantum well device for producing localized electron states for detectors and modulators 失效
标题翻译：用于产生检测器和调制器的局部电子状态的量子阱器件
公开(公告)号：US5311009A
公开(公告)日：1994-05-10
申请号：US923197
申请日：1992-07-31
申请人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Carlo Sirtori , Deborah L. Sivco
发明人： Federico Capasso , Alfred Y. Cho , Jerome Faist , Carlo Sirtori , Deborah L. Sivco
IPC分类号： H01L29/12 , H01L31/0352 , H01L27/12
CPC分类号： B82Y10/00 , H01L29/122 , H01L31/0352 , Y10S977/759 , Y10S977/761
摘要： In accordance with the invention, a quantum well device provides localized states for electrons having an energy E greater than the barrier height of the constituent quantum wells. The device comprises a confinement quantum well of width L.sub.w equal to an integer number n of deBroglie half wavelengths ##EQU1## and a plurality of adjacent quarter wavelength barriers and wells, each having a thickness equal to an odd number m of deBroglie quarter wavelengths. Constructive interference between the waves partially reflected by the interfaces between adjacent .lambda./4 barriers and .lambda./4 wells leads to the formation of a localized electron state at an energy E in the region of the confinement well. The device can be used in detectors and modulators employing transitions between a bound state within the well and the localized state above the well.
摘要翻译：根据本发明，量子阱器件为具有大于构成量子阱的势垒高度的能量E的电子提供局部状态。该装置包括宽度为Lw的限制量子阱，其等于整数n个deBroglie半波长ve长度屏障和阱，每个具有等于deBroglie四分之一波长的奇数m的厚度。由相邻λ/ 4屏障和λ/ 4阱之间的界面部分反射的波之间的建构性干扰导致在约束阱区域内以能量E形成局部电子态。该装置可以用于探测器和调制器中，采用阱内的结合状态和井之上的局部化状态之间的转换。

6. 发明授权

US5332690A Method of making an integrated optical package for coupling optical fibers to devices with asymmetric light beams 失效
标题翻译：制造用于将光纤耦合到具有不对称光束的装置的集成光学封装的方法
公开(公告)号：US5332690A
公开(公告)日：1994-07-26
申请号：US107541
申请日：1993-08-17
申请人： Alfred Y. Cho , Deborah L. Sivco , Daryoosh Vakhshoori
发明人： Alfred Y. Cho , Deborah L. Sivco , Daryoosh Vakhshoori
IPC分类号： G02B6/12 , G02B6/30 , G02B6/42 , G02B27/09 , H01S5/00 , H01L21/20
CPC分类号： G02B6/42 , G02B19/0028 , G02B19/0052 , G02B27/09 , G02B27/0994 , G02B6/4206 , G02B2006/12195 , G02B6/305 , Y10S438/978
摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (REE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent-coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.
摘要翻译：本发明体现了一种集成的光学封装，其包括具有不对称模态输出的光学部件，以及与该部件集成的透镜，用于耦合到具有大模态面积的另一光学部件。通过使用聚合物伸长波导模拟（PEWE）透镜来实现耦合。在示例性实施例中，第一光学部件是调制器，另一个光学部件是光纤。通过反应离子蚀刻（REE）蚀刻调制器的一面，其允许将PEWE透镜集成在公共基板上。在电介质包覆层上使用聚合物膜制造透镜。该制造依赖于聚合物膜的重熔和回流性能，以提供从圆形（光纤）模式（直径约6μm）到半导体模式（约1μm）的平滑绝热模式，其长度为250 亩即使透镜与任何外部透镜的光纤对接，PEWE透镜也能够实现0.5dB和80％耦合效率的插入损耗耦合。 PEWE透镜允许对半导体激光器，光电探测器，光调制器，开关和放大器实现优于80％的直接光纤对接耦合效率，同时具有通过半导体器件与单个耦合的通常所需的对准公差的同时数量级的松弛模式光纤。

7. 发明授权

US5265177A Integrated optical package for coupling optical fibers to devices with asymmetric light beams 失效
标题翻译：用于将光纤耦合到具有不对称光束的装置的集成光学封装
公开(公告)号：US5265177A
公开(公告)日：1993-11-23
申请号：US881020
申请日：1992-05-08
申请人： Alfred Y. Cho , Deborah L. Sivco , Daryoosh Vakhshoori
发明人： Alfred Y. Cho , Deborah L. Sivco , Daryoosh Vakhshoori
IPC分类号： G02B6/12 , G02B6/30 , G02B6/42 , G02B27/09 , H01S5/00
CPC分类号： G02B6/42 , G02B19/0028 , G02B19/0052 , G02B27/09 , G02B27/0994 , G02B6/4206 , G02B2006/12195 , G02B6/305 , Y10S438/978
摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (RIE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.

8. 发明授权

US5212395A P-I-N photodiodes with transparent conductive contacts 失效
标题翻译：具有透明导电触点的P-I-N光电二极管
公开(公告)号：US5212395A
公开(公告)日：1993-05-18
申请号：US844264
申请日：1992-03-02
申请人： Paul R. Berger , Alfred Y. Cho , Niloy K. Dutta , John Lopata , Henry M. O'Bryan, Jr. , Deborah L. Sivco , George J. Zydzik
发明人： Paul R. Berger , Alfred Y. Cho , Niloy K. Dutta , John Lopata , Henry M. O'Bryan, Jr. , Deborah L. Sivco , George J. Zydzik
IPC分类号： H01L31/10 , H01L31/0216 , H01L31/0224 , H01L31/105
CPC分类号： H01L31/022466 , H01L31/02161 , H01L31/105
摘要： This invention pertains to a p-i-n In.sub.0.53 Ga.sub.0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O.sub.2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter-diffusion into the i-region is not relevant, which avoids an increased dark current.

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