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1. 发明申请

US20060197087A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20060197087A1
公开(公告)日：2006-09-07
申请号：US11307160
申请日：2006-01-26
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。接下来，在沟道层上形成源/漏区。

2. 发明授权

US07375372B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US07375372B2
公开(公告)日：2008-05-20
申请号：US11307160
申请日：2006-01-26
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。接下来，在沟道层上形成源/漏区。

3. 发明申请

US20070114533A1 THIN FILM TRANSISTOR INCLUDING A LIGHTLY DOPED AMORPHOUS SILICON CHANNEL LAYER 审中-公开
标题翻译：薄膜晶体管，包括一个轻微的非晶硅通道层
公开(公告)号：US20070114533A1
公开(公告)日：2007-05-24
申请号：US11624699
申请日：2007-01-19
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor (TFT) is provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。源极/漏极区域形成在沟道层上。

4. 发明授权

US07205171B2 Thin film transistor and manufacturing method thereof including a lightly doped channel 有权
标题翻译：薄膜晶体管及其制造方法包括轻掺杂沟道
公开(公告)号：US07205171B2
公开(公告)日：2007-04-17
申请号：US10711509
申请日：2004-09-23
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L21/00 , H01L21/84 , H01L21/331 , H01L21/8222 , H01L21/20 , H01L21/36 , H01L21/302
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。接下来，在沟道层上形成源/漏区。

5. 发明申请

US20050176188A1 Thin film transistor and manufacturing method thereof 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050176188A1
公开(公告)日：2005-08-11
申请号：US10777564
申请日：2004-02-11
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L21/00 , H01L21/336 , H01L21/84 , H01L29/02 , H01L29/786 , H01L29/94 , H01L31/119 , H01L47/00
CPC分类号： H01L29/78696 , H01L29/66765 , H01L29/78669
摘要： A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and a source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。接下来，在沟道层上形成源/漏区。

6. 发明申请

US20050176187A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050176187A1
公开(公告)日：2005-08-11
申请号：US10711509
申请日：2004-09-23
申请人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
发明人： Fang-Chen Luo , Wan-Yi Liu , Chieh-Chou Hsu
IPC分类号： H01L21/00 , H01L21/336 , H01L21/84 , H01L29/02 , H01L29/786 , H01L29/94 , H01L31/119 , H01L47/00
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。薄膜晶体管（TFT）包括衬底，栅极，栅极间介电层，沟道层和源极/漏极区。栅极形成在衬底上。在覆盖栅极的衬底上形成栅极间电介质层。在栅极间电介质层的一部分上形成掺杂非晶硅层，至少覆盖栅极以用作沟道层。接下来，在沟道层上形成源/漏区。

7. 发明授权

US08441603B2 Liquid crystal display structure 有权
标题翻译：液晶显示结构
公开(公告)号：US08441603B2
公开(公告)日：2013-05-14
申请号：US11847341
申请日：2007-08-30
申请人： Fang-Chen Luo , Wei-Chih Chang
发明人： Fang-Chen Luo , Wei-Chih Chang
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/136227 , G02F2001/133357 , G02F2001/136222
摘要： A liquid crystal display structure includes a first substrate panel, a second substrate panel, and a liquid crystal layer between the first substrate panel and the second substrate panel. Pixel portions, formed by respective electrodes for applying a voltage to the liquid crystal layer, include a transparent substrate panel, an organic insulating layer, a patterned reflective layer, a dielectric layer, a transparent conductive layer and a thin film transistor. The organic insulating layer is formed over the transparent substrate panel. The patterned reflective layer is formed over the organic insulating layer exposing a portion of the organic insulating layer. The dielectric layer is formed over the patterned reflective layer. The dielectric layer has a smooth upper surface. The transparent conductive layer is over the dielectric layer. The transparent conductive layer is connected to the thin film transistor so that the thin film transistor can drive the transparent conductive electrode.
摘要翻译：液晶显示结构包括第一衬底面板，第二衬底面板和在第一衬底面板和第二衬底面板之间的液晶层。由用于向液晶层施加电压的各个电极形成的像素部分包括透明基板，有机绝缘层，图案化反射层，电介质层，透明导电层和薄膜晶体管。有机绝缘层形成在透明基板上。图案化的反射层形成在有机绝缘层上，暴露有机绝缘层的一部分。电介质层形成在图案化的反射层上。电介质层具有平滑的上表面。透明导电层在电介质层的上方。透明导电层与薄膜晶体管连接，薄膜晶体管能驱动透明导电电极。

8. 发明申请

US20090305473A1 METHOD FOR FABRICATING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制作方法
公开(公告)号：US20090305473A1
公开(公告)日：2009-12-10
申请号：US12258451
申请日：2008-10-27
申请人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
发明人： Fang-Chen Luo , Shuo-Wei Liang , Shin-Chuan Chiang , Chao-Nan Chen , Chin-Chih Yu
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘层以覆盖栅极。在栅极绝缘层上形成金属氧化物材料层。在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。

9. 发明申请

US20060119753A1 Stacked storage capacitor structure for a thin film transistor liquid crystal display 有权
标题翻译：用于薄膜晶体管液晶显示器的堆叠存储电容器结构
公开(公告)号：US20060119753A1
公开(公告)日：2006-06-08
申请号：US11004389
申请日：2004-12-03
申请人： Fang-Chen Luo , Chang-Cheng Lo
发明人： Fang-Chen Luo , Chang-Cheng Lo
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , H01L27/12
摘要： A stacked storage capacitor structure for use in each pixel of a TFT-LCD, wherein a first storage capacitor is formed by a first metal layer, a gate insulator layer and a second metal layer. The second capacitor is formed by the second metal layer, a passivation insulator layer and an ITO layer. The first metal layer and the ITO layer are joined together through a via hole which is etched in one insulator etching step during the overall fabrication process through both the gate insulator and the passivation insulator layers. As such, the two capacitors are connected in parallel in a stacked configuration. With the stacked storage capacitor structure, the charge storage capacity is increased without significantly affecting the aperture ratio of a pixel. The ITO and the pixel electrode can be different parts of an indium tine oxide layer deposited on the passivation insulator layer.
摘要翻译：一种用于TFT-LCD的每个像素的堆叠存储电容器结构，其中第一存储电容器由第一金属层，栅极绝缘体层和第二金属层形成。第二电容器由第二金属层，钝化绝缘体层和ITO层形成。第一金属层和ITO层通过在通过栅极绝缘体和钝化绝缘体层的整个制造工艺中的一个绝缘体蚀刻步骤中被蚀刻的通孔而接合在一起。这样，两个电容器以堆叠的方式并联连接。利用堆叠的存储电容器结构，电荷存储容量增加而不显着影响像素的开口率。 ITO和像素电极可以是沉积在钝化绝缘体层上的铟氧化物层的不同部分。

10. 发明授权

US4135959A Method of manufacture of flat panel display device 失效
标题翻译：平板显示装置的制造方法
公开(公告)号：US4135959A
公开(公告)日：1979-01-23
申请号：US780611
申请日：1977-03-23
申请人： Fang-Chen Luo , Thomas P. Brody
发明人： Fang-Chen Luo , Thomas P. Brody
IPC分类号： G09F13/22 , G09F9/30 , G09G3/20 , G09G3/30 , G09G3/32 , H04N3/14 , H05B33/12 , H05B33/26 , H05B35/00 , B05D5/12
CPC分类号： H04N3/14 , G09G3/32 , G09G2300/0842
摘要： A large area integrated solid-state flat panel display is detailed in which thin film transistor addressing and drive circuitry is provided at each individual picture point with a display medium. The preferred display medium is an electroluminescent phosphor layer. An insulating layer of laminated photoresist is disposed over all electrical circuit elements except the electroluminescent drive electrodes.

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