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1. 发明专利

JPH09199581A SUBSTRATUM RETAINING PART MEMBER AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR DEVICE OR LIQUID DISPLAY DEVICE WHICH USE THE SAME 失效
公开(公告)号：JPH09199581A
公开(公告)日：1997-07-31
申请号：JP30211596
申请日：1996-11-13
申请人： FURON TEC KK , OMI TADAHIRO
发明人： NAKANO AKIRA , TAKAMURA SHOZO , OMI TADAHIRO
IPC分类号： G02F1/13 , G02F1/1333 , H01L21/673 , H01L21/68 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To make an antistatic process unnecessary, and prevent generation of local potential distribution, by covering at least the surface of matrix which comes into contact with a substratum or approaches it, with an insulating film, in conductive matrix holding the substratum on which electronic elements or electric circuits are formed. SOLUTION: A substratum 100 on which TFT type liquid crystal display(TFT-LCD) cells are arranged is manufactured by using a substratum retaining part member 110. The surface of matrix 112 is covered with insulating film 111, which is a PFA(perfluoroalkoxy) film of 20μm in thickness formed by an enamel coating method. Thereby a line type display defect which is to be caused by generation of a DC offset voltage inside the liquid crystal cells can be prevented. A line type display defect due to the shift of the threshold voltage of a TFT can be prevented.

2. 发明专利

JPH08227798A BASE SUPPORT MEMBER, BASE CARRYING DEVICE HAVING THE SAME, AND BASE SUPPORTING METHOD USING THEM 失效
公开(公告)号：JPH08227798A
公开(公告)日：1996-09-03
申请号：JP3105795
申请日：1995-02-20
申请人： FURON TEC KK , OMI TADAHIRO
发明人： NAKANO AKIRA , YOSHIDA OSAMU , HARAKO SATOSHI , OMI TADAHIRO
IPC分类号： H05F3/02
摘要： PURPOSE: To prevent the generation of a local potential distribution on a base by arranging a resistor between one end of a base support member and the other end to be connected to an earth. CONSTITUTION: A base 100 is formed of a glass base 101, a metal wiring for connecting a TFT array, or signal line or scanning line 102, an orientation film 103, a liquid crystal 103, a seal layer 105, and a color filter 106. A base support member 110 is formed of one end 111 of a L-shaped base support member 110, the other end 112 of the base support member 110 connected to an earth; and a resistor 113 arranged between the one end 11 and other end 112 of the base support member 110. Thus, when the base 100 is charged with a charge (a), a charge (b) having the reverse polarity to the charge (a) is supplied through the base support member 110. Consequently, the base 110 is laid in the macroscopically neutralized charged state, or a substantially zero potential state where the charge (b) is removed, and the generation of a trouble by electrification can be reduced. The resistance value of the resistor 113 is desirably 50KΩ or more and less than 1GΩ.

3. 发明专利

JPH0919668A WET TREATMENT AND TREATMENT DEVICE 失效
公开(公告)号：JPH0919668A
公开(公告)日：1997-01-21
申请号：JP16995695
申请日：1995-07-05
申请人： FURON TEC KK , ORGANO KK , OMI TADAHIRO
发明人： MIMORI KENICHI , OMI TADAHIRO , YAMANAKA KOJI , IMAOKA TAKAYUKI , FUTATSUKI TAKASHI , YAMASHITA KOFUKU , YOSHIZAWA MICHIO
IPC分类号： B08B3/12 , H01L21/304 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To make a wet treatment possible with the required man. consumption of chemicals by executing the wet treatment while irradiating the anode water or cathode water obtd. by electrolysis of pure water and ultrapure water with ultrasonic waves of a specific frequency in the case where a work is subjected to the wet treatment by using this anode water or cathode water. SOLUTION: An electrolytic apparatus 102 for electrolyzing the water supplied through an introducing piping system 101 is constituted by disposing electrode pairs of anode electrodes 104 and cathode electrodes 107 in an anode chamber 103 and cathode chamber 106 separated by a diaphragm 114. DC current is supplied from a DC power source 113 to the respective electrode pairs 104, 107 to form the anode water and cathode water by electrolysis. The resulted anode water and cathode water are supplied through leading-out piping systems 105, 108 to respective wet treating sections 120, 121. The work is wet treated by the treating liquid obtd. by continuously irradiating the liquid with the ultrasonic waves of >=30Khz from ultrasonic irradiation means 109, 111.

4. 发明专利

JPH07245408A ELECTRONIC ELEMENT 失效
公开(公告)号：JPH07245408A
公开(公告)日：1995-09-19
申请号：JP3576794
申请日：1994-03-07
申请人： FURON TEC KK , OMI TADAHIRO
发明人： FUKUDA KOICHI , OBA TOMOFUMI , YOSHIDA OSAMU , KASAMA YASUHIKO , IWASAKI CHISATO , NAKANO AKIRA , OMI TADAHIRO
IPC分类号： H01L23/12 , H01L21/314 , H01L21/336 , H01L21/822 , H01L27/04 , H01L29/78 , H01L29/786
摘要： PURPOSE:To increase insulation breakdown voltage by setting the contact angle between the wiring and substrate of an electrical element where an insulation film is formed by covering the wiring formed on the substrate surface. a film thickness ratio, and the starting position of a protuberance due to the step difference part of wiring of the insulation film to specific ranges. CONSTITUTION:In an electrical element where a conductive wiring pattern 9 is formed on the surface of a substrate 5 at least whose surface is insulated and an insulation layer is formed by partially or entirely covering the substrate 5 and the wiring pattern 9, the insulation layer consists of silicon nitride insulation film 25, the contact angle theta for the substrate 5 of the wiring pattern 9 is equal to or more than 60 degrees, the ratio Tn1/Tg between the film thickness Tn1 and the film thickness Tg of the wiring pattern 9 of the silicon nitride insulation film 25 is equal to or more than 2, and a horizontal distance Tn2 between a starting position A of protuberance where the silicon nitride insulation film 25 is raised due to the step part of the wiring pattern 9 and an upper edge part B of the wiring pattern 9 is equal to or more than 0.6.

5. 发明专利

JP2003224079A HEAT TREATING METHOD, HEAT TREATING DEVICE AND MANUFACTURING METHOD FOR SILICON EPITAXIAL WAFER 审中-公开
公开(公告)号：JP2003224079A
公开(公告)日：2003-08-08
申请号：JP2002023684
申请日：2002-01-31
申请人： SHINETSU HANDOTAI KK , OMI TADAHIRO
发明人： KANETANI KOICHI , NISHIZAWA TAKESHI , OMI TADAHIRO , SUGAWA SHIGETOSHI
IPC分类号： H01L21/677 , H01L21/205 , H01L21/324 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a heat treating method capable of reducing the amount of brought-in moisture to a heat treating chamber (reaction chamber), a heat treating device and a manufacturing method for a silicon epitaxial wafer. SOLUTION: The heat treating method is for executing a heat treatment to a silicon single crystal substrate W by using a heat treating device 10 provided with a load lock chamber 20, a heat treating chamber 30, and a transfer chamber 40 for transferring the silicon single crystal substrate W between the load lock chamber 20 and the heat treating chamber 30. After performing work for enabling the atmosphere outside the heat treating device 10 to flow into the transfer chamber 40, a transfer chamber inner wall heating process is executed for heating the inner wall of the transfer chamber 40 to a temperature lower than the temperature of the heat treatment performed in the heat treating chamber 40. Thereafter, the silicon single crystal substrate W inside the load lock chamber 20 is carried through the transfer chamber 40 to the heat treating chamber 30, and the heat treatment is performed in the heat treating chamber 30. COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2003214671A CLEAN ROOM 审中-公开
公开(公告)号：JP2003214671A
公开(公告)日：2003-07-30
申请号：JP2002014906
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , YAMADA TAKAHISA , SUMIHAMA HIROSHI , NAKAZAWA KATSUNORI , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04F13/07 , E04F13/00 , E04F13/08 , E04F15/18 , E04H5/02 , F24F7/06
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional clean room, wherein anti-static measures for walls and floors are not sufficiently made, so they are electrically charged, dusts accumulate due to static charge, a static electricity spark causes organic reaction, and then gas generate, causing problems in manufacturing semiconductors. SOLUTION: This clean room has a conductive sheet floor finishing material (conductive vinyl chloride sheet 4) extending to a wall substrate surface (2), and has a conductive sheet wall finishing material (conductive cloth 5) through which electricity is conducted to the sheet floor finishing material extending to the wall substrate surface. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2003213952A STRUT BASE WRAPPER FOR CLEAN ROOM 审中-公开
公开(公告)号：JP2003213952A
公开(公告)日：2003-07-30
申请号：JP2002014925
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , YAMADA TAKAHISA , SUMIHAMA HIROSHI , NAKAZAWA KATSUNORI , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04B1/24 , E04H5/02
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional clean room base wrapper, the problem being caused by non-conduction thereof to a steel strut and difficult grounding of current charged on a surface of the steel strut, resulting in stagnation of electric charge on the surface of the steel strut and adverse effect on semiconductor production, etc. SOLUTION: There is provided a new strut base wrapper 1 for the clean room, which consists of a base wrapping frame 2, and base wrapping concrete 5. The base wrapping frame 2 is formed of an electric conductor, and encloses the periphery of a base of the strut 42 in a manner being spaced away from the strut so as to form a space in which concrete is placed. The base wrapping concrete 5 is placed in the space between the base wrapping frame 2 and the strut 42. An inner side of the base wrapping frame 2 is electrically connected to the strut 42 via a conductive rod 4. Further, a surface of the strut, a floor surface, and an upper surface of the base wrapping concrete are subjected to conductive treatment, and the strut surface and the floor surface which have been subjected to the conductive treatment are brought into conduction with each other via the upper surface of the base wrapping concrete which has been subjected to the conductive treatment, and the conductive base wrapping frame. COPYRIGHT: (C)2003,JPO

8. 发明专利

JP2003213917A PERFORATED FLOOR OF CLEAN ROOM 审中-公开
公开(公告)号：JP2003213917A
公开(公告)日：2003-07-30
申请号：JP2002014936
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04H5/02 , E04F15/024 , E04F15/18
摘要： PROBLEM TO BE SOLVED: To solve such a problem that in a perforated floor of conventional clean rooms, since the end of each perforated floor plate forming the perforated floor is not electrically connected, the floor can not shade electromagnetic waves of a high frequency band. SOLUTION: In the perforated floor of a clean room in which a plurality of perforated floor plates 1 constituted of a conductive body having a plurality of formed holes are laid so as to arrange side by side. The external peripheral end of adjacent perforated floor plates 1 are electrically connected by a shield gasket 4, and the corner 6 of each perforated floor plate 1 is fixedly screwed in a metallic base piece 5 through a shield packing 7. In this way, each perforated floor plate 1 is electrically connected to a steel joist 60. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2003213812A INTERIOR SYSTEM FOR CLEAN ROOM 审中-公开
公开(公告)号：JP2003213812A
公开(公告)日：2003-07-30
申请号：JP2002016255
申请日：2002-01-24
申请人： OMI TADAHIRO , HITACHI PLANT ENG & CONSTR CO , TAKASAGO THERMAL ENGINEERING , BENITSUKUSU KK
发明人： OMI TADAHIRO , SHIRAI YASUYUKI , HANAOKA HIDEO , KOBAYASHI KIKUJI , HONMA TAKESHI , SHIBATA KUNIHIRO , SAITO KAZUO , KUDO MASAMITSU , TOMIKAWA SHINOBU , SAIRENJI AKIRA
IPC分类号： E04B1/92
摘要： PROBLEM TO BE SOLVED: To provide an interior system for a clean room ensuring electromagnetic wave shielding by positively carrying out electrical connection at a joint part between panels in constructing the clean room with interior panels. SOLUTION: Rubber vibration insulators are interposed at the joint parts of a floor panel, a wall panel and a ceiling panel constituting the interior material of the clean room, and the panels are jointed by electromagnetic shielding plates across the rubber vibration insulators while connecting them to construct the clean room as rigid structure, and the clean room of rigid structure is constructed interposing the rubber vibration insulators at the internal wall surface of a building wall finishing material. The electromagnetic wave shielding plate is stuck to the building finishing material, and a spring member made of a conductive material is interposed with a space between the interior panel and the electromagnetic wave shielding plate to construct the clean room. The electromagnetic wave shielding plate is formed of a Galvalume Steel Sheet (R), and the spacing for fixing the electromagnetic wave shielding plate to the other electromagnetic wave shielding plate is set to the multiple of the wavelength or less on the basis of frequency centering on the electromagnetic wave to be shielded. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003208929A EARTHING SYSTEM OF BUILDING 审中-公开
公开(公告)号：JP2003208929A
公开(公告)日：2003-07-25
申请号：JP2002006987
申请日：2002-01-16
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , SHIRAI YASUYUKI , SUZUKI HIROKAZU , ENDO TETSUO
IPC分类号： E04H9/14 , H01R4/66 , H02B1/16
摘要： PROBLEM TO BE SOLVED: To provide an earthing system of a building, which can protect an electronic equipment from lightning and lightning surge, electromagnetic wave noise or the like by eliminating potential differences between the earth and the equipment installed in the building. SOLUTION: Steel frames 14a, 14b of a trunk body 13 and the earths of equipments 16a to 16c, 17a to 17c concentrated at distribution boards 18a, 18b of respective stories are electrically connected respectively, and plural earth piles 11 are driven directly beneath the building 10, and the earth piles 11 are mutually connected by embedding a mesh layer 12 formed by twisted conductive wires, and by electrically connecting this embedding mesh layer 12 and the steel frames 14a, 14b, the earthing of the building 10 is made to be carried out. COPYRIGHT: (C)2003,JPO

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