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1. 发明申请

US20220197137A1 PRE-WET LIQUID, RESIST FILM FORMING METHOD, PATTERN FORMING METHOD, AND KIT 有权
公开(公告)号：US20220197137A1
公开(公告)日：2022-06-23
申请号：US17693405
申请日：2022-03-13
申请人： FUJIFILM Corporation
发明人： Satomi TAKAHASHI
IPC分类号： G03F7/00 , G03F7/20 , G03F7/40 , G03F7/32
摘要： The present invention provides a pre-wet liquid having excellent resist-saving properties. In addition, a resist film forming method, a pattern forming method, and a kit, which are related to the pre-wet liquid, are also provided.
The pre-wet liquid according to the embodiment of the present invention has a surface tension of 29.0 mN/m or more, a viscosity of 1.8 cP or less, and a vapor pressure of 2.5 to 5.0 mmHg, in a case of consisting of a single solvent, the pre-wet liquid has an SP value of 25.0 MPa1/2 or less and does not have a benzene ring group, and in a case of consisting of a mixed solvent, the pre-wet liquid satisfies the requirement 1 or the requirement 2.
requirement 1: The mixed solvent is a mixed solvent consisting of only two or more kinds of organic solvents A, and the organic solvent A has an SP value of 25.0 MPa1/2 or less and a surface tension of 29.0 mN/m or more and does not have a benzene ring group.
requirement 2: The mixed solvent is a mixed solvent of an organic solvent A and an organic solvent B, and the organic solvent B has an SP value of 25.0 MPa1/2 or less and a surface tension of less than 29.0 mN/m.

2. 发明公开

US20240317485A1 CHEMICAL LIQUID AND CHEMICAL LIQUID STORAGE BODY 审中-公开
公开(公告)号：US20240317485A1
公开(公告)日：2024-09-26
申请号：US18673409
申请日：2024-05-24
申请人： FUJIFILM Corporation
发明人： Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OOMATSU , Tetsuya SHIMIZU
IPC分类号： B65D85/00 , B65D25/14 , B65D81/26 , G03F7/00 , G03F7/32
CPC分类号： B65D85/70 , B65D25/14 , B65D81/26 , G03F7/32 , G03F7/325 , G03F7/0012
摘要： The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

3. 发明公开

US20240231236A1 CHEMICAL LIQUID AND PATTERN FORMING METHOD 审中-公开
公开(公告)号：US20240231236A1
公开(公告)日：2024-07-11
申请号：US18585441
申请日：2024-02-23
申请人： FUJIFILM Corporation
发明人： Satomi TAKAHASHI , Tetsuya Shimizu , Michihiro Shirakawa
IPC分类号： G03F7/32
CPC分类号： G03F7/325
摘要： The present invention provides a chemical liquid that provides a pattern with good resolution and that also has a good ability to suppress the occurrence of defects when the pattern is formed using the chemical liquid as a developer or a rinsing liquid. The chemical liquid according to the present invention is a chemical liquid including an aromatic hydrocarbon, an organic solvent other than the aromatic hydrocarbon, and metal X. The aromatic hydrocarbon is composed only of hydrogen atoms and carbon atoms. A content of the aromatic hydrocarbon is 1 mass % or less relative to a total mass of the chemical liquid. The organic solvent includes an aliphatic hydrocarbon. The metal X is at least one metal selected from the group consisting of Al, Fe, and Ni. A mass ratio of the content of the aromatic hydrocarbon to a content of the metal X is 5.0×104 to 2.0×1010.

4. 发明公开

US20240219831A1 PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240219831A1
公开(公告)日：2024-07-04
申请号：US18411364
申请日：2024-01-12
申请人： FUJIFILM Corporation
发明人： Kazuhiro MARUMO , Satomi TAKAHASHI , Yohei ISHIJI , Michihiro SHIRAKAWA , Akiyoshi GOTO
IPC分类号： G03F7/004 , G03F7/00
CPC分类号： G03F7/0048 , G03F7/0045 , G03F7/70033
摘要： The present invention provides a pattern forming method that enables the formation of a pattern excellent in resolution and evenness and a method for producing an electronic device. The pattern forming method according to the present invention includes a resist film-forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition that undergoes an increase in the degree of solubility in an organic solvent due to action of exposure, acid, base, or heating, an exposure step of exposing the resist film, and a developing step of developing the exposed resist film with a developer including an organic solvent. The organic solvent includes an ester-based solvent having 6 or less carbon atoms and a hydrocarbon-based solvent.

5. 发明申请

US20210130084A1 MEMBER, CONTAINER, CHEMICAL LIQUID STORAGE BODY, REACTOR, DISTILLATION COLUMN, FILTER UNIT, STORAGE TANK, PIPE LINE, AND CHEMICAL LIQUID MANUFACTURING METHOD 有权
公开(公告)号：US20210130084A1
公开(公告)日：2021-05-06
申请号：US17141335
申请日：2021-01-05
申请人： FUJIFILM Corporation
发明人： Tetsuya SHIMIZU , Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OOMATSU
IPC分类号： B65D85/84 , B01D3/00 , B01D39/20 , B65D25/14 , C25F3/24 , C11D7/50
摘要： The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction. The maximum value is 0.5 to 3.0, and an average surface roughness of the surface of the member is equal to or lower than 10 nm.

6. 发明申请

US20200368691A1 FILTERING DEVICE, PURIFICATION DEVICE, AND METHOD FOR MANUFACTURING CHEMICAL LIQUID 审中-公开
公开(公告)号：US20200368691A1
公开(公告)日：2020-11-26
申请号：US16991158
申请日：2020-08-12
申请人： FUJIFILM Corporation
发明人： Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OMATSU , Tetsuya SHIMIZU
IPC分类号： B01D61/58 , B01D71/26 , B01D69/02 , B01D65/02 , B01D71/56 , B01D71/28 , B01D71/68 , B01D71/32 , B01D3/14 , H01L21/67
摘要： A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.

7. 发明申请

US20190219923A1 CHEMICAL LIQUID, CHEMICAL LIQUID STORAGE BODY, CHEMICAL LIQUID FILLING METHOD, AND CHEMICAL LIQUID STORAGE METHOD 审中-公开
公开(公告)号：US20190219923A1
公开(公告)日：2019-07-18
申请号：US16365016
申请日：2019-03-26
申请人： FUJIFILM Corporation
发明人： Tetsuya KAMIMURA , Satomi TAKAHASHI
IPC分类号： G03F7/32 , C08F14/26 , C08F10/06 , B65D88/08
CPC分类号： G03F7/325 , B65D88/06 , B65D88/08 , C08F10/06 , C08F14/26 , C11D7/50 , C11D17/08 , G03F7/16 , G03F7/32 , H01L21/027 , H01L21/0274
摘要： An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

8. 发明公开

US20240280362A1 METHOD FOR TESTING PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING PHOTOSENSITIVE COMPOSITION 审中-公开
公开(公告)号：US20240280362A1
公开(公告)日：2024-08-22
申请号：US18610609
申请日：2024-03-20
申请人： FUJIFILM Corporation
发明人： Naohiro TANGO , Michihiro SHIRAKAWA , Kei YAMAMOTO , Satomi TAKAHASHI
IPC分类号： G01B21/10 , G03F7/004 , G03F7/32
CPC分类号： G01B21/10 , G03F7/0045 , G03F7/325
摘要： The present invention provides a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. The method for testing a photosensitive composition has a step 1 of using a reference photosensitive composition including an acid decomposable resin having a group that is decomposed by an action of an acid to generate a polar group and a photoacid generator, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining any one reference data selected from the group consisting of a line width or a space width of a line-shaped resist pattern, an opening diameter of an opening portion in the resist pattern, and a dot diameter of a dot-like resist pattern; a step 2 of using a photosensitive composition for measurement including components of the same types as types of components included in the reference photosensitive composition, to form a resist film on a substrate, exposing the resist film, using a developer to perform a development treatment to form a resist pattern, and obtaining measurement data of the resist pattern; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the developer is an organic solvent-based developer including an aliphatic hydrocarbon solvent, an aromatic hydrocarbon, and at least one metal atom selected from the group consisting of Al, Fe, and Ni, and a mass ratio of a content of the aromatic hydrocarbon to a content of the metal atom in the developer is 5.0×104 to 2.0×1010.

9. 发明公开

US20240176242A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM 审中-公开
公开(公告)号：US20240176242A1
公开(公告)日：2024-05-30
申请号：US18412068
申请日：2024-01-12
申请人： FUJIFILM Corporation
发明人： Michihiro SHIRAKAWA , Satomi TAKAHASHI , Yohei ISHIJI , Akiyoshi GOTO
IPC分类号： G03F7/039 , C08F212/08 , C08F212/14 , C08F220/22 , C08F220/28 , G03F7/038
CPC分类号： G03F7/039 , C08F212/08 , C08F212/22 , C08F212/24 , C08F220/22 , C08F220/282 , C08F220/283 , G03F7/038
摘要： A first object of the present invention is to provide a pattern forming method in which even if the time from the end of exposure treatment to the start of development treatment (waiting time before development) varies, a variation in the line width of a pattern to be formed is small. A second object of the present invention is to provide a method for producing an electronic device, the method relating to the pattern forming method. A third object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition and a resist film that are suitable for the pattern formation.
The pattern forming method according to the present invention includes a step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition,

a step of exposing the resist film, and
a step of developing the exposed resist film with a developer including an organic solvent.

The composition satisfies a requirement A1 or a requirement A2 below.

Requirement A1: The composition includes a resin X1 having a group that decreases polarity due to action of exposure, acid, base, or heating.
Requirement A2: The composition includes a resin X2 having a polar group, and a compound that reacts with the polar group due to action of exposure, acid, base, or heating.

10. 发明公开

US20230350290A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION 审中-公开
公开(公告)号：US20230350290A1
公开(公告)日：2023-11-02
申请号：US18220825
申请日：2023-07-12
申请人： FUJIFILM Corporation
发明人： Tetsuya KAMIMURA , Satomi TAKAHASHI
IPC分类号： G03F7/004 , B65D85/00 , G03F7/16 , G03F7/26 , G03F7/20 , H01L21/027 , G03F7/039 , G03F7/00 , G03F7/075
CPC分类号： G03F7/0048 , B65D85/70 , G03F7/161 , G03F7/26 , G03F7/168 , G03F7/2002 , G03F7/162 , H01L21/027 , G03F7/16 , G03F7/0392 , G03F7/0012 , G03F7/0397 , G03F7/0758
摘要： A pattern forming method includes a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate, a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of exposing the resist film, and a development step of developing the exposed resist film by using a developer. The chemical liquid contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.

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