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1. 发明申请

WO2010150917A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME 审中-公开
标题翻译：化学放大抗蚀剂组合物，以及使用其的模具制备方法和耐蚀膜
公开(公告)号：WO2010150917A1
公开(公告)日：2010-12-29
申请号：PCT/JP2010/061096
申请日：2010-06-23
申请人： FUJIFILM CORPORATION , FUJIMORI, Toru , SHIRAKAWA, Koji , USA, Toshihiro , SUGIYAMA, Kenji , ITO, Takayuki , TSUBAKI, Hideaki , NISHIMAKI, Katsuhiro , HIRANO, Shuji , TAKAHASHI, Hidenori
发明人： FUJIMORI, Toru , SHIRAKAWA, Koji , USA, Toshihiro , SUGIYAMA, Kenji , ITO, Takayuki , TSUBAKI, Hideaki , NISHIMAKI, Katsuhiro , HIRANO, Shuji , TAKAHASHI, Hidenori
IPC分类号： G03F7/039 , B29C33/38 , B29C59/02 , C08F12/00 , C08F20/00 , C08F20/50 , G03F7/004 , H01L21/027
CPC分类号： C08F20/50 , B29C33/38 , B29C2033/426 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A chemical amplification resist composition that is used for preparation of a mold, and a mold preparation method and a resist film each using the composition are provided.
摘要翻译：提供了用于制备模具的化学放大抗蚀剂组合物，以及使用该组合物的模具制备方法和抗蚀剂膜。

2. 发明申请

WO2012133932A1 METHOD FOR FORMING RESIST PATTERNS AND METHOD FOR PRODUCING PATTEREND SUBSTRATES EMPLOYING THE RESIST PATTERNS 审中-公开
标题翻译：形成电阻图案的方法和生产使用电阻图案的图案基板的方法
公开(公告)号：WO2012133932A1
公开(公告)日：2012-10-04
申请号：PCT/JP2012/059290
申请日：2012-03-29
申请人： FUJIFILM CORPORATION , OHTSU, Akihiko , NISHIMAKI, Katsuhiro
发明人： OHTSU, Akihiko , NISHIMAKI, Katsuhiro
IPC分类号： G03F7/00
CPC分类号： H01L21/3065 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： [Objective] To enable the widths of protrusions of a resist pattern after residual film etching steps to be a desired value greater than or equal to the widths of the protrusions of the resist pattern prior to the residual film etching steps. [Constitution] Residual film etching steps for etching a resist film (2) onto which a pattern (13) of protrusions and recesses (13) has been formed includes: a first etching step that employs a first etching gas including a sedimentary gas that generates sediment (4) during etching to etch the resist film under conditions such that the sediment (4) is deposited on the side walls (2a) of protrusions of a resist pattern while residual film (2b) is etched. The conditions are set such that steps following the first etching step etch the resist film (2) such that the widths of the protrusions (2a) including the deposited sediment (4) become a desired width greater than or equal to the widths of the protrusions (2a) prior to the residual film etching steps.
摘要翻译： [目的]为了使剩余膜蚀刻工序后的抗蚀剂图案的突起的宽度成为大于或等于残留膜蚀刻步骤之前的抗蚀剂图案的突起的宽度的期望值。 [构成]用于蚀刻蚀刻形成有突起和凹陷（13）的图案（13）的抗蚀剂膜（2）的残留膜蚀刻步骤包括：第一蚀刻步骤，其使用包括产生沉积气体的沉积气体的第一蚀刻气体在蚀刻期间蚀刻抗蚀剂膜的沉淀物（4），使得沉积物（4）沉积在抗蚀剂图案的突起的侧壁（2a）上，同时蚀刻残余膜（2b）。条件被设置为使得在第一蚀刻步骤之后的步骤蚀刻抗蚀剂膜（2），使得包括沉积的沉积物（4）的突起（2a）的宽度变成大于或等于突起的宽度的期望宽度（2a）之前的剩余膜蚀刻步骤。

3. 发明申请

WO2012133956A4 METHOD FOR PRODUCING MOLDS 审中-公开
公开(公告)号：WO2012133956A4
公开(公告)日：2012-10-04
申请号：PCT/JP2012/059619
申请日：2012-04-02
申请人： FUJIFILM CORPORATION , OHTSU, Akihiko , HATTORI, Akiko , NISHIMAKI, Katsuhiro
发明人： OHTSU, Akihiko , HATTORI, Akiko , NISHIMAKI, Katsuhiro
IPC分类号： G03F7/00
摘要： [Objective] To enable improvements in throughput in production of molds having deposited films as mold release layers. [Constitution] In production of a mold 1 having a deposited film on the surface thereof as a mold release layer (14), a quartz substrate (10) is plasma etched employing an etching gas that includes a sedimentary gas (5a)/(5b) to form a pattern of protrusions and recesses having a desired shape in a structure constituted by the quartz substrate (10) and a mask layer (M), while a deposited film constituted by sediment of the sedimentary gas (5a)/(5b) is formed along the pattern of protrusions and recesses.

4. 发明公开

EP2399168A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME 审中-公开
标题翻译：化学增强的抗蚀剂组合物方法以及FORM抗蚀膜生产订单
公开(公告)号：EP2399168A1
公开(公告)日：2011-12-28
申请号：EP10792234.6
申请日：2010-06-23
申请人： FUJIFILM Corporation
发明人： FUJIMORI, Toru , SHIRAKAWA, Koji , USA, Toshihiro , SUGIYAMA, Kenji , ITO, Takayuki , TSUBAKI, Hideaki , NISHIMAKI, Katsuhiro , HIRANO, Shuji , TAKAHASHI, Hidenori
IPC分类号： G03F7/039 , B29C33/38 , B29C59/02 , C08F12/00 , C08F20/00 , C08F20/50 , G03F7/004 , H01L21/027
CPC分类号： C08F20/50 , B29C33/38 , B29C2033/426 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A chemical amplification resist composition that is used for preparation of a mold, and a mold preparation method and a resist film each using the composition are provided.

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