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1. 发明申请

US20180269677A1 SEMICONDUCTOR ELEMENT DRIVING DEVICE 审中-公开
公开(公告)号：US20180269677A1
公开(公告)日：2018-09-20
申请号：US15986359
申请日：2018-05-22
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takuo YAMAMURA
IPC分类号： H02H7/122 , H02H1/00 , H02M1/08 , H02M7/5387 , H03K17/0812 , G01R19/165 , G01R31/26 , G01R31/42
CPC分类号： H02H7/122 , G01R19/16547 , G01R31/2619 , G01R31/42 , H02H1/0007 , H02H1/0061 , H02H7/222 , H02M1/08 , H02M1/32 , H02M7/5387 , H02M7/53871 , H02M2001/327 , H03K17/08128 , H03K17/0828 , H03K17/18 , H03K19/20 , H03K2017/0806
摘要： A semiconductor element driving device including: plural detection units configured to detect information necessary for protection operation for a semiconductor element included in a power conversion device; a protection signal generation unit configured to generate a protection signal having a pulse width different according to each of the plural detection units when the plural detection units detect the information necessary for the protection operation; a protection state monitoring unit configured to generate a protection state signal while any of the plural detection units is detecting the information necessary for the protection operation; and a signal output unit configured to output an alarm signal, the alarm signal changing from a first level to a second level when the protection signal and the protection state signal are input, and changing to an intermediate level between the first level and the second level when the input of the protection signal is stopped.

2. 发明申请

US20160191047A1 SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF 审中-公开
标题翻译：半导体器件及其控制方法
公开(公告)号：US20160191047A1
公开(公告)日：2016-06-30
申请号：US14942842
申请日：2015-11-16
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takuo YAMAMURA
IPC分类号： H03K17/567 , H03K5/13 , H03K17/687
CPC分类号： H03K5/13 , H03K17/163 , H03K17/168 , H03K2005/00078
摘要： A semiconductor device for driving a semiconductor switch, including a first transistor configured to extract gate charges of the semiconductor switch with a first extraction force, a comparator configured to compare gate voltage of the semiconductor switch with a threshold voltage to thereby output a first decision signal, an AND circuit configured to perform an AND operation on a gate voltage of the first transistor and the first decision signal to thereby output a second decision signal, a delay circuit configured to delay the second decision signal by a predetermined time and to output the delayed signal as a second control signal, and a second transistor configured to be turned-on, in response to the second control signal, the predetermined time after the first transistor is turned-on, to thereby extract the gate charges of the semiconductor switch with a second extraction force larger than the first extraction force.
摘要翻译：一种用于驱动半导体开关的半导体器件，包括：第一晶体管，被配置为以第一提取力提取半导体开关的栅极电荷;比较器，被配置为将半导体开关的栅极电压与阈值电压进行比较，从而输出第一判定信号，AND电路，被配置为对第一晶体管的栅极电压和第一判定信号执行AND运算，从而输出第二判定信号;延迟电路，被配置为将第二判定信号延迟预定时间并输出延迟信号作为第二控制信号，以及第二晶体管，其被配置为响应于所述第二控制信号导通所述第一晶体管导通之后的预定时间，从而将所述半导体开关的栅极电荷提取为第二提取力大于第一提取力。

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