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1. 发明申请

WO2007096095A3 ETCHING SOLUTION AND METHOD FOR STRUCTURING A UBM LAYER SYSTEM 审中-公开
标题翻译：蚀刻溶液和工艺结构甲UBM膜层系统的
公开(公告)号：WO2007096095A3
公开(公告)日：2008-02-07
申请号：PCT/EP2007001363
申请日：2007-02-16
申请人： FRAUNHOFER GES ZUER FOERDERUNG , DIETZ FRANK , KOHLMANN-VON PLATEN KLAUS , QUENZER HANS-JOACHIM
发明人： DIETZ FRANK , KOHLMANN-VON PLATEN KLAUS , QUENZER HANS-JOACHIM
IPC分类号： C23F1/02 , C23F1/16 , C23F1/18 , C23F1/44 , H01L21/60
CPC分类号： C23F1/02 , C23F1/16 , C23F1/18 , C23F1/44 , H01L21/32134 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05001 , H01L2224/05124 , H01L2224/05155 , H01L2224/0554 , H01L2224/05647 , H01L2224/114 , H01L2224/116 , H01L2224/13006 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2224/13099 , H01L2924/00014
摘要： The invention relates to an etching solution for etching a layer system comprising at least one aluminium layer, at least one copper layer and at least a third layer selected from nickel vanadium, nickel and the alloys thereof, and arranged between the at least one aluminium layer and the at least one copper layer. Said solution contains phosphoric acid, nitric acid, deionised water and at least one salt that can release halogen ions, or consists of said constituents. The claimed etching solution is the basis for a single-step structuring method for a UBM layer system used for the production of components produced by means of a method relating to semiconductor technology.
摘要翻译：本发明涉及一种蚀刻溶液用于蚀刻的层系统，其包含的至少一种铝层，铜镍钒，镍及其合金的第三层，其被布置在至少一个铝层和至少一个铜层之间的和至少至少一层 ,,其中磷酸，硝酸，离子交换水和能够释放卤离子中的至少一种盐的溶液含有或由这些组件。所要求保护的蚀刻溶液为这是在装置，其通过一个UBM层系统的半导体工艺来制造的制造中使用单级图案化的方法的基础。

2. 发明申请

WO2004064123A3 METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：方法的半导体元件
公开(公告)号：WO2004064123A3
公开(公告)日：2004-09-10
申请号：PCT/DE0304286
申请日：2003-12-23
申请人： FRAUNHOFER GES FORSCHUNG , KOHLMANN-VON PLATEN KLAUS , BERNT HELMUT , FRIEDRICH DETLEF
发明人： KOHLMANN-VON PLATEN KLAUS , BERNT HELMUT , FRIEDRICH DETLEF
IPC分类号： H01L21/331 , H01L21/762 , H01L27/088 , H01L27/06
CPC分类号： H01L29/66325 , H01L21/76283 , H01L27/088
摘要： Disclosed is a method for the production of a semiconductor element comprising at least one first vertical power component (5, 9) and at least one lateral, active component (6) and/or at least one second vertical power component (10), between which at least one trench (2) filled with at least one type of insulation (4) is disposed. The invention also relates to a semiconductor component produced according to said method. The semiconductor component is essentially characterized by an eccentric or concentric arrangement of the respective functional elements (5, 6, 9, 10) which are respectively separated from each other by trench insulation. In order to produce one such semiconductor element, at least one trench is etched into the front side of a silicon substrate (1). Said trench fully encompasses at least one partial surface of the front side and is subsequently filled with insulation (4). In a further stage of said method, the silicon substrate (1) is extensively thinned from the rear side to the insulation (4), i.e. up to the lower side of the insulation. The power components (5, 9, 10) are contacted from the rear side.
摘要翻译：用于制造半导体器件，包括至少一个第一垂直功率组分（5,9）和至少一个横向，活性成分（6）的处理和/或至少一个第二垂直电源部件（10）中描述了至少一个具有绝缘之间（4）填充沟槽（2）被布置，以及由半导体器件的方法制造的产品。由相应的功能元件（5，6，9，10），它们分别通过从沟槽隔离分开的一个前或同心布置的半导体器件的特征在于基本上。要在硅衬底的前产生这样的半导体元件（1）被蚀刻至少一个沟槽（2），后者完全，随后包围前侧的至少一个部分区域的具有绝缘（4）被填充。在该方法的进一步的过程中，从后方侧的硅衬底（1）到绝缘（4），只要该绝缘的底面变薄在整个表面上。功率元件（5,9，10）的所述接触是从背面处。

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