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1. 发明申请

WO9928520A3 DEVICE FOR PROCESSING WORKPIECES IN LOW PRESSURED PLASMA 审中-公开
标题翻译：设备，用于低压等离子体处理WORKPIECES
公开(公告)号：WO9928520A3
公开(公告)日：1999-07-15
申请号：PCT/DE9803514
申请日：1998-11-24
申请人： FRAUNHOFER GES FORSCHUNG , WINKLER TORSTEN , GOEDICKE KLAUS , FIETZKE FRED , SCHILLER SIEGFRIED , KIRCHHOFF VOLKER
发明人： WINKLER TORSTEN , GOEDICKE KLAUS , FIETZKE FRED , SCHILLER SIEGFRIED , KIRCHHOFF VOLKER
IPC分类号： C23G5/00 , H01J37/32 , C23C14/02
CPC分类号： H01J37/32018 , C23G5/00 , H01J37/32036 , H01J37/3266 , H01J37/32761
摘要： One disadvantage of known plasma processing devices is that the current density and etching rate cannot be increased as desired if productivity is to be improved. Said devices are also operated at a high gas pressure. Devices operating at a high gas pressure are not suitable for processing ferromagnetic or thick workpieces. The inventive device consists of a device which generates a magnetic field. The workpiece is mounted as an electrode for low pressure discharge. The counter electrode is arranged outside the magnetic field. A pulsed current is applied to the workpiece and the counter electrode. The device is used for plasma-processing of workpieces with respect to material, form and thickness. A high erosion rate can be obtained at low gas pressure, resulting in high productivity.
摘要翻译：用于等离子体处理的已知装置具有的缺点是，电流密度，因此蚀刻速度不能无限地增加，以增加生产率。此外，它们具有高的气体压力下操作。具有高的气体压力的工作设施不适合于治疗铁磁或厚的工件。那的应用领域受到限制。根据本发明，该装置包括一磁场产生装置的，将工件连接作为低压放电的电极，所述反电极布置在磁场到工件和对置电极的外部，一个脉冲电流被施加。该装置用于相对于材料，形状和材料厚度的等离子体处理的任何工件。它是实现除去率高，在低气压和高生产率。

2. 发明申请

WO2004013374A3 DEVICE AND METHOD FOR COATING SUBSTRATES 审中-公开
标题翻译：用于涂布基材的装置和方法
公开(公告)号：WO2004013374A3
公开(公告)日：2004-12-09
申请号：PCT/EP0308001
申请日：2003-07-22
申请人： FRAUNHOFER GES FORSCHUNG , FRACH PETER , BARTZSCH HAGEN , GOEDICKE KLAUS , WINKLER TORSTEN , LIEBIG JOERN-STEFFEN , KIRCHHOFF VOLKER
发明人： FRACH PETER , BARTZSCH HAGEN , GOEDICKE KLAUS , WINKLER TORSTEN , LIEBIG JOERN-STEFFEN , KIRCHHOFF VOLKER
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3408 , C23C14/35
摘要： The invention relates to a device for coating substrates by means of magnetron sputtering. Said device comprises at least one sputtering source according to the magnetron principle, at least one target (1) which can be placed on an optional electrical potential, a tunnel-shaped, closed magnetic field (5) which is located above the surface and is at least temporarily used as a cathode, at least one electrode which is at least temporarily used as an anode (7), and at least one power supply unit (8) for producing a voltage between the target(s) and the electrode or the associated electrodes, a device (9) for producing magnetic fields being associated with the electrode in such a way that the electrode surface is at least partially penetrated by a magnetic field. According to the invention, the maximum value of the magnetic field component parallel to the electrode surface H II,max is at least 5 % of the maximum value of the magnetic field component parallel to the target surface H II,max.
摘要翻译：本发明涉及一种设备，用于通过磁控溅射涂覆基材的至少一个溅射源根据磁控管原理与至少一个相应的集拢，以选择性地自由电位靶（1），其具有在自己的封闭隧道形磁场（5）的表面上，这至少有时如上阴极连接，和至少一个至少暂时地作为目标以及目标和所述电极和所述相关联的电极，其中所述电极包括磁场发生装置之间产生的电压的阳极（7）连接的电极和至少一个电源单元（8）（9）被分配，使得电极表面是至少部分地由一个磁场，穿过其中场分量平行的磁性的最大值到电极表面H， II，场分量平行的磁性的至目标表面H， II，最大的最大值的最大值至少为5％有关 GT。

3. 发明申请

WO2004029321A3 COMPOSITE BODIES HAVING AN ABRASION-REDUCING SURFACE AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：随着对生产VERSCHLEISSMINDERNDEN面层与方法的复合体
公开(公告)号：WO2004029321A3
公开(公告)日：2004-05-27
申请号：PCT/EP0309967
申请日：2003-09-08
申请人： FRAUNHOFER GES FORSCHUNG , KLOSTERMANN HEIDRUN , FIETZKE FRED , ZYWITZKI OLAF , GOEDICKE KLAUS
发明人： KLOSTERMANN HEIDRUN , FIETZKE FRED , ZYWITZKI OLAF , GOEDICKE KLAUS
IPC分类号： C23C14/08 , C23C30/00 , C23C14/00 , B23B27/14
CPC分类号： C23C30/005 , C23C14/08
摘要： The invention relates to composite bodies consisting of a support body and at least one abrasion-reducing layer which is applied by means of vacuum coating to at least parts of the surface thereof. The abrasion-reducing layer is made of crystalline aluminium oxide having an average crystallite size of less than 100 nanometers and an oxidic phase of the elements titanium, zirconium or hafnium or a mixture thereof, whereby the oxidic phase of the elements titanium, zirconium or hafnium or a mixture thereof is provided in such a way that it is segregated at least partially at the grain boundaries of the aluminium oxide-crystallite.
摘要翻译：本发明涉及一种复合材料，其包括载体体和至少一个通过真空沉积在其表面的至少一部分施加在verschleissmindernden层，其中具有小于100纳米的平均晶粒尺寸和元素钛的氧化物相，锆，结晶氧化铝的降低磨损的层或铪或它们的混合物，其特征在于，元素钛，锆或铪或者至少部分的混合物的氧化物相存在偏析于氧化铝晶粒的晶界处。

4. 发明申请

WO2006034739A3 METHOD FOR VACUUM-COATING WITH A PHOTO-SEMICONDUCTING LAYER AND USE OF SAID METHOD 审中-公开
标题翻译：具有光引导层的真空调节方法及其使用方法
公开(公告)号：WO2006034739A3
公开(公告)日：2006-06-08
申请号：PCT/EP2005006238
申请日：2005-06-10
申请人： FRAUNHOFER GES FORSCHUNG , FRACH PETER , GLOESS DANIEL , GOEDICKE KLAUS , KLINKENBERG SIGRUN , GOTTFRIED CHRISTIAN , KIRCHHOFF VOLKER
发明人： FRACH PETER , GLOESS DANIEL , GOEDICKE KLAUS , KLINKENBERG SIGRUN , GOTTFRIED CHRISTIAN , KIRCHHOFF VOLKER
IPC分类号： C23C14/35 , C23C14/54
CPC分类号： C23C14/083 , C23C14/0042
摘要： The invention relates to a method for vacuum-coating an object with a photo-semiconducting layer. Said method is characterized by the following steps: adjusting the temperature of the surface-near area of the object to a value in the range of from -40 °C to +250 °C prior to coating; operating a reactive pulsed magnetron sputter process with at least one electrically conducting target containing titanium as the main component in a working gas containing at least one inert gas and oxygen; controlling the process in accordance with the purpose of application of the coated object in such a manner as to ensure formation of mainly titanium oxide in a defined ratio of the atomic composition of the layer of titanium to oxygen such as 1: (2+x), whereby x ranges from -0.5 to +0.3; adjusting such a ratio of the rates of ionized and neutral particles during layer formation that a portion of at least 5 percent of titanium oxide is formed as a crystalline modification thereof and that the parameters of the sputter process are selected in such a manner that the surface temperature of the object does not exceed a maximum temperature of 300 °C.
摘要翻译：本发明涉及一种真空的方法涂敷与光半导电层的对象，其中所述对象的表面附近区域的在-40℃至+ 250℃被设定的范围内涂布到一个值前的温度; 以含有至少一种惰性气体和氧气的工作气体中的至少一种含有钛作为主要成分的导电靶材操作反应性脉冲磁控管溅射工艺; 通过在涂覆对象的应用目的的依赖的过程控制氧化钛的主要在钛氧的层的原子组成的一个固定的预定比率形成为1:（2 + x）被固定，其中，x在-0.5到的范围内 +0.3是; 这样的膜形成过程中离子化和中性粒子的速率的比被设定为至少5％的钛氧化物的结晶变形成比例和溅射工艺的参数选择为使得物体的表面温度的300℃的最高温度 C不超过。

5. 发明申请

WO2004094686A3 DEVICE FOR COATING A STATIONARY SUBSTRATE BY PULSE MAGNETRON SPUTTERING 审中-公开
标题翻译： DEVICE涂料固定安装型基板BY脉冲磁控溅射
公开(公告)号：WO2004094686A3
公开(公告)日：2005-03-03
申请号：PCT/EP2004002332
申请日：2004-03-08
申请人： FRAUNHOFER GES FORSCHUNG , FRACH PETER , GOEDICKE KLAUS , GOTTFRIED CHRISTIAN
发明人： FRACH PETER , GOEDICKE KLAUS , GOTTFRIED CHRISTIAN
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3429 , H01J37/3405
摘要： The invention relates to a pulse magnetron sputtering device containing: a recipient (1) with a vacuum generating system; two magnetron sputtering sources (7, 8); at least one substrate holder (15), and; a power supply device. Said recipient, in one sectional plane, comprises a pentagonal cross-section that has at least one right angle. A magnetron sputtering source is mounted on each of the lateral walls (2, 3) that are situated at right angles to one another. The three remaining lateral walls (4-6) are each provided with an opening and associated flanges (16-18). At least one opening of one lateral wall located opposite a magnetron source is sealed via vacuum flanges comprising means for freely positioning the substrate holder either directly opposite the middle (20) of the opposing magnetron sputtering source or parallelly offset with regard to the middle of the source, and the power supply device is equipped with means for the magnetron sputtering sources. These means permit the supply of unipolar power pulses having a frequency ranging from 1 to 100 kHz in each source with a separately settable power and with a separately settable pulse ratio or permit the supply of bipolar power pulses having a frequency ranging from 1 to 100 kHz with, for each polarity, separately settable power and separately settable pulse ratio.
摘要翻译：本发明涉及一种含有Pulsmagnetronsputtereinrichtung接收者（1）与一真空产生系统中，两个磁控管溅射源（7,8），至少一个衬底保持器（15）和一个电源装置，其中，所述接收方具有在截面五边形横截面，其包括至少一个直角 ; 在两个相互垂直的侧壁（2,3）的磁控管是各自安装; 三个剩余侧壁（4-6）各设置有一开口和相关联的凸缘（16-18），其特征在于，相对的一侧的磁控管侧壁中的至少一个开口被密封真空法兰，用于衬底保持器的可选定位装置，无论是直接相反的相反磁控溅射的中间（20）或在所述源和所述电力供应装置的中心并联包括偏移被提供用于与装置的磁控管溅射源为以1:1的频率供给单极性输出脉冲... 100千赫中的每个源分别调节功率，可单独调节的脉冲比，或者电力用双极脉冲与1千赫... 100与使能每个极性分离可调整功率和独立可调的脉冲比的频率供给。

6. 发明专利

DD230565A3 未知
公开(公告)号：DD230565A3
公开(公告)日：1985-12-04
申请号：DD25630383
申请日：1983-11-03
申请人： HARTUNG JOHANNES , GOEDICKE KLAUS , HEISIG ULLRICH , SCHILLER SIEGFRIED , BEISTER GUENTHER , HECHT HANS CHRISTIAN , HEMPEL WOLFGANG , KUEHN GERHARD , SPREITZ VOLKMAR
发明人： HARTUNG JOHANNES , GOEDICKE KLAUS , HEISIG ULLRICH , SCHILLER SIEGFRIED , BEISTER GUENTHER , HECHT HANS-CHRISTIAN , HEMPEL WOLFGANG , KUEHN GERHARD , SPREITZ VOLKMAR
IPC分类号： C23C14/34 , C23C14/36

7. 发明专利

DD203334A1 未知
公开(公告)号：DD203334A1
公开(公告)日：1983-10-19
申请号：DD23625981
申请日：1981-12-24
申请人： STEINFELDER KARL , KORNDOERFER CHRISTIAN , HEISIG ULLRICH , SCHILLER SIEGFRIED , GOEDICKE KLAUS , BILZ HARALD , PFEIL GEORG , HENNEBERGER JUERGEN , STEINHAUER INGO , PAGEL LINHARD , KERN MANFRED
发明人： STEINFELDER KARL , KORNDOERFER CHRISTIAN , HEISIG ULLRICH , SCHILLER SIEGFRIED , GOEDICKE KLAUS , BILZ HARALD , PFEIL GEORG , HENNEBERGER JUERGEN , STEINHAUER INGO , PAGEL LINHARD , KERN MANFRED
IPC分类号： C23C15/00

8. 发明专利

DD152583A1 未知
公开(公告)号：DD152583A1
公开(公告)日：1981-12-02
申请号：DD22328480
申请日：1980-08-13
申请人： BILZ HARALD , BRODE WOLFGANG , GOEDICKE KLAUS , HEISIG ULLRICH , HENNEBERGER JUERGEN , PFEIL GEORG , SCHILLER SIEGFRIED , SCHNEIDER BERNHARD , STEINHAUER INGO , UFFRECHT MARTIN
发明人： BILZ HARALD , BRODE WOLFGANG , GOEDICKE KLAUS , HEISIG ULLRICH , HENNEBERGER JUERGEN , PFEIL GEORG , SCHILLER SIEGFRIED , SCHNEIDER BERNHARD , STEINHAUER INGO , UFFRECHT MARTIN
IPC分类号： C23C14/34 , C23C15/00

10. 发明专利

DD203335A1 未知
公开(公告)号：DD203335A1
公开(公告)日：1983-10-19
申请号：DD23638881
申请日：1981-12-30
申请人： HEISIG ULLRICH , STEINFELDER KARL , HARTUNG JOHANNES , SCHILLER SIEGFRIED , GOEDICKE KLAUS , GEHM KLAUS , KOSCH WOLFGANG , REICHARDT HORST , ROTH HERBERT , SIEBER WOLFGANG
发明人： HEISIG ULLRICH , STEINFELDER KARL , HARTUNG JOHANNES , SCHILLER SIEGFRIED , GOEDICKE KLAUS , GEHM KLAUS , KOSCH WOLFGANG , REICHARDT HORST , ROTH HERBERT , SIEBER WOLFGANG
IPC分类号： C23C15/00

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