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1. 发明申请

WO2011020923A3 DIODE LASER AND LASER RESONATOR FOR A DIODE LASER HAVING IMPROVED LATERAL BEAM QUALITY 审中-公开
标题翻译：二极管和激光谐振器具有改进横向光束质量二极管
公开(公告)号：WO2011020923A3
公开(公告)日：2012-02-09
申请号：PCT/EP2010062256
申请日：2010-08-23
申请人： FORSCHUNGSVERBUND BERLIN EV , ERBERT GOETZ , SPREEMANN MARTIN , WENZEL HANS , FRICKE JOERG
发明人： ERBERT GOETZ , SPREEMANN MARTIN , WENZEL HANS , FRICKE JOERG
IPC分类号： H01S5/125 , H01S5/10 , H01S5/20
CPC分类号： H01S5/125 , H01S5/1064 , H01S5/1089 , H01S5/1215 , H01S5/2036 , H01S2301/166
摘要： The present invention relates to a diode laser and to a laser resonator for a diode laser having improved lateral beam quality without using an external resonator. The present invention in particular relates to a broad area laser having high power output. It is the aim of the present invention to provide a diode laser and a laser resonator for a diode laser, which has high lateral beam quality at high power output, requires little adjustment effort and is inexpensive to produce. The laser resonator according to the invention comprises a gain section (GS), a first planar Bragg reflector (DBR1) and a second planar Bragg reflector (DBR2), wherein the gain section (GS) has a trapezoidal design and the first planar Bragg reflector (DBR1) is arranged on a first base side of the trapezoidal gain section (GS) and the second planar Bragg reflector (DBR2) is arranged on the opposing base side of the trapezoidal gain section (GS), wherein the width (D1) of the first planar Bragg reflector (DBR1) differs from the width (D2) of the second planar Bragg reflector (DBR2).
摘要翻译：本发明涉及一种二极管激光器和一个激光谐振器为具有改进的横向光束质量的二极管激光器，而无需使用外部谐振器，特别是，本发明涉及一种宽条形激光器具有高输出功率。本发明提供一种二极管激光器和一个激光谐振器为二极管激光器，其具有在高功率输出的高侧的光束质量的目的，要求在调整一个低的费用和制造成本低。根据本发明的激光谐振器包括一个增益部分（GS），第一平面布拉格反射器（DBR1）和第二平面布拉格反射器（DBR2），其中，所述增益部（GS）在形状上是梯形的，并且在第一第一平面布拉格反射器（DBR1）梯形增益部（GS）和在梯形增益部分（GS）的相对的基侧上的第二平面布拉格反射器（DBR2）的基端侧被布置，其中，所述宽度在第一平面反射镜的宽度的（DBR1）的（D1）（D2）第二平面布拉格反射器（DBR1）不同。

2. 发明申请

WO2012034972A3 LASER DIODE WITH HIGH EFFICIENCY 审中-公开
标题翻译：高效率激光二极管
公开(公告)号：WO2012034972A3
公开(公告)日：2012-08-16
申请号：PCT/EP2011065751
申请日：2011-09-12
申请人： FORSCHUNGSVERBUND BERLIN EV , CRUMP PAUL , ERBERT GOETZ , WENZEL HANS
发明人： CRUMP PAUL , ERBERT GOETZ , WENZEL HANS
IPC分类号： H01S5/22 , H01S5/343
CPC分类号： H01S5/20 , A61B18/203 , A61B2018/00476 , A61B2090/049 , H01S5/2031 , H01S5/22 , H01S5/3213 , H01S2301/185
摘要： The present invention relates to a laser diode with high efficiency and high eye safety. The object of the present invention is to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (10), the first outer layer (14), the first waveguide layer (12), the second waveguide layer (16) and the second outer layer (18) are intended to be designed such that 0.01 µm = dwL = 1.0 µm and ?n = 0.04, where dwL is the sum of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10) and the layer thickness of the second waveguide layer (16), and ?n is a maximum of the refractive-index difference between the first outer layer (14) and the first waveguide layer (12), and the refractive-index difference between the second waveguide layer (16) and the second outer layer (18).
摘要翻译：本发明涉及一种具有高效率和高眼安全激光二极管。它是本发明的一个目的是提供具有高效率和高眼安全的光源。对于这一点，在有源层（10），所述第一包层（14），所述第一波导层（12），第二波导层（16）和所述第二包层（18）应该是这样的，0.01微米= DWL = 1配置的， 0微米与 - ，N = 0.04，和DWL是第一波导层（12），有源层（10）和所述第二波导层的层厚度（16）和层厚度的厚度之和△n为最大值之间的折射率差的是所述第一包层（14）和所述第一波导层（12）和所述第二波导层（16）和所述第二包层（18）之间的折射率差。

3. 发明专利

DE102006041728A1 未知
公开(公告)号：DE102006041728A1
公开(公告)日：2008-03-13
申请号：DE102006041728
申请日：2006-09-01
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： TRAENKLE GUENTHER , ERBERT GOETZ , KLEHR ANDREAS , HOFMANN MARTIN
IPC分类号： H01S5/20 , H01S4/00 , H01S5/065

4. 发明专利

DE50304846D1 未知
公开(公告)号：DE50304846D1
公开(公告)日：2006-10-12
申请号：DE50304846
申请日：2003-01-08
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： BRAUN MATTHIAS , ERBERT GOETZ , WENZEL HANS
IPC分类号： H01S5/12 , G02B5/18

5. 发明专利

AT338363T 未知
公开(公告)号：AT338363T
公开(公告)日：2006-09-15
申请号：AT03729213
申请日：2003-01-08
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： BRAUN MATTHIAS , ERBERT GOETZ , WENZEL HANS
IPC分类号： G02B5/18 , H01S5/12

6. 发明专利

DE10200360B4 未知
公开(公告)号：DE10200360B4
公开(公告)日：2004-01-08
申请号：DE10200360
申请日：2002-01-08
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： BRAUN MATTHIAS , WENZEL HANS , ERBERT GOETZ
IPC分类号： G02B5/18 , H01S5/12 , H01S5/187

7. 发明专利

DE102009028823A1 Diodenlaser und Laserresonator für einen Diodenlaser mit verbesserter lateraler Strahlqualität 未知
公开(公告)号：DE102009028823A1
公开(公告)日：2011-02-24
申请号：DE102009028823
申请日：2009-08-21
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： ERBERT GOETZ , SPREEMANN MARTIN , WENZEL HANS , FRICKE JOERG
IPC分类号： H01S5/125 , H01S5/30
摘要： Die vorliegende Erfindung betrifft einen Diodenlaser und Laserresonator für einen Diodenlaser mit verbesserter lateralen Strahlqualität ohne Verwendung eines externen Resonators, insbesondere betrifft die vorliegende Erfindung einen Breitstreifenlaser mit hohen Ausgangsleistungen. Es ist Aufgabe der vorliegenden Erfindung, einen Diodenlaser und einen Laserresonator für einen Diodenlaser anzugeben, der bei hohen Ausgangsleistungen eine hohe laterale Strahlqualität aufweist, einen geringen Justageaufwand erfordert und preiswert herstellbar ist. Der erfindungsgemäße Laserresonator weist eine Gewinnsektion (GS), einen ersten planaren Bragg Reflektor (DBR1) und einen zweiten planaren Bragg Reflektor (DBR2) auf, wobei die Gewinnsektion (GS) trapezförmig ausgebildet ist und der erste planare Bragg Reflektor (DBR1) an einer ersten Grundseite der trapezförmigen Gewinnsektion (GS) und der zweite planare Bragg Reflektor (DBR2) an der gegenüberliegenden Grundseite der trapezförmigen Gewinnsektion (GS) angeordnet sind, wobei sich die Breite (D1) des ersten planaren Bragg Reflektors (DBR1) von der Breite (D2) des zweiten planaren Bragg Reflektors (DBR1) unterscheidet.

8. 发明专利

DE102006057718A1 Semiconductor component e.g. semiconductor laser diode, has relaxation layer arranged between functional layer and solder and/or between solder and carrier substrate, where relaxation layer has thickness of micrometers, and is made of gold 未知
公开(公告)号：DE102006057718A1
公开(公告)日：2008-06-05
申请号：DE102006057718
申请日：2006-12-01
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： ERBERT GOETZ , FRICKE JOERG , PITTROFF WOLFGANG , WENZEL HANS
IPC分类号： H01L23/373 , H01L21/58 , H01L23/12 , H01S3/042
摘要： The component has a functional layer (2) made of semiconductor material, and a carrier substrate (1) made of a material, which has a thermal conductivity of 50 watts per meter Kelvin. A solder (3) is arranged at the carrier substrate, and protects the functional layer. A relaxation layer (4, 4a) is arranged between the functional layer and the solder and/or between the solder and the carrier substrate, where the relaxation layer has a thickness of micrometers, and is made of gold. An independent claim is also included for a method for manufacturing a semiconductor component.

9. 发明专利

DE102007001667A1 Semiconductor laser diode-module`s individual component e.g. laser diode, contacting arrangement, has optical components arranged on base body, and printed circuit board including conducting lines with contact connection to components 未知
公开(公告)号：DE102007001667A1
公开(公告)日：2007-11-08
申请号：DE102007001667
申请日：2007-01-11
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： GILONAS ARNIM , SCHWERTFEGER SVEN , ERBERT GOETZ
IPC分类号： H01S5/022 , H01S5/024
摘要： The arrangement has optical components (1) arranged on a base body (6). A printed circuit board (7) is fastened at a side of the components on the base body. The board includes units for external power supply line and conducting lines (8) with contact connection to the components. The base body is made from material with high heat conductivity and includes ridges and cavities at its upper surface for mounting the components.

10. 发明专利

DE102004038283A1 Opto-electronic component with layers of materials with different, complex refraction indices and active, waveguide and transformation zone 未知
$Opto-electronic component with layers of materials with different, complex refraction indices and active, waveguide and transformation zone$
公开(公告)号：DE102004038283A1
公开(公告)日：2006-03-16
申请号：DE102004038283
申请日：2004-08-03
申请人： FORSCHUNGSVERBUND BERLIN EV
发明人： GUETHER REINER , PASCHKE KATRIN , FRICKE JOERG , ERBERT GOETZ
IPC分类号： H01S5/065 , G02F1/35 , H01S3/082 , H01S5/40
摘要： Layered materials comprise different, coupled refraction indices and at least one layer contains active regions and waveguide regions respectively with at least one transformation zone. Active regions are so coupled via transformation zones that radiation from active regions is guided and split in specified manner.Active regions, coupled by transformation regions, contain at least partial regions without grid structure, or with not more than one simple grid structure. Preferably, active region are in form of specified laser structures. Independent claims are included for method for coherent coupling of active regions in opto-electronic components.

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