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1. 发明申请

US20140131653A1 UNIPOLAR PROGRAMMABLE METALLIZATION CELL 有权
标题翻译： UNIPOLAR可编程金属化细胞
公开(公告)号：US20140131653A1
公开(公告)日：2014-05-15
申请号：US13675923
申请日：2012-11-13
申请人： FENG-MING LEE , YU-YU LIN , MING-HSIU LEE
发明人： FENG-MING LEE , YU-YU LIN , MING-HSIU LEE
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G11C11/00 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： A programmable metallization device comprises a first electrode and a second electrode, and a dielectric layer, a conductive ion-barrier layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the dielectric layer to represent a data value using bias voltages having the same polarity, enabling the use of diode access devices. To form a conductive bridge, a bias is applied that is high enough to cause ions to penetrate the conductive ion-barrier layer into the dielectric layer, which then form filaments or bridges. To destruct the conductive bridge, a bias of the same polarity is applied that causes current to flow through the structure, while ion flow is blocked by the conductive ion-barrier layer. As a result of Joule heating, any bridge in the dielectric layer disintegrates.
摘要翻译：可编程金属化器件包括在第一和第二电极之间串联的第一电极和第二电极以及电介质层，导电离子阻挡层和离子供给层。在操作中，在电介质层中形成或破坏导电桥，以使用具有相同极性的偏置电压来表示数据值，从而能够使用二极管接入装置。为了形成导电桥，施加足够高的偏压，使得离子将导电离子阻挡层穿透到电介质层中，然后形成细丝或桥。为了破坏导电桥，施加相同极性的偏压，导致电流流过结构，同时离子流被导电离子阻挡层阻挡。作为焦耳加热的结果，介电层中的任何桥分解。

2. 发明申请

US20130182487A1 PROGRAMMABLE METALLIZATION CELL WITH TWO DIELECTRIC LAYERS 有权
标题翻译：具有两个介电层的可编程金属化电池
公开(公告)号：US20130182487A1
公开(公告)日：2013-07-18
申请号：US13352946
申请日：2012-01-18
申请人： FENG-MING LEE , Yu-Yu Lin
发明人： FENG-MING LEE , Yu-Yu Lin
IPC分类号： G11C11/00 , H01L21/822 , H01L27/08
CPC分类号： G11C13/0011 , G11C8/10 , G11C2213/54 , G11C2213/71 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1675
摘要： A programmable metallization device comprises a first electrode and a second electrode, and a first dielectric layer, a second dielectric layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the first dielectric layer to represent a data value. During read, a read bias is applied that is sufficient to cause formation of a transient bridge in the second dielectric layer, and make a conductive path through the cell if the bridge is present in the first dielectric layer. If the bridge is not present in the first dielectric layer during the read, then the conductive path is not formed. Upon removal of the read bias voltage any the conductive bridge formed in the second dielectric layer is destructed while the conductive bridge in the corresponding other first dielectric layer, if any, remains.
摘要翻译：可编程金属化器件包括第一电极和第二电极，以及在第一和第二电极之间串联的第一电介质层，第二电介质层和离子供给层。在操作中，在第一电介质层中形成或破坏导电桥以表示数据值。在读取期间，施加足以在第二电介质层中形成瞬态电桥的读取偏压，并且如果桥存在于第一介电层中，则形成通过电池的导电路径。如果在读取期间桥不在第一电介质层中，则不形成导电路径。在去除读取的偏置电压时，形成在第二介电层中的任何导电桥被破坏，而相应的其它第一介电层（如果有的话）中的导电桥保留。

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