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1. 发明申请

WO9709731A3 FIELD EMITTER DEVICE, AND VEIL PROCESS FOR THE FABRICATION THEREOF 审中-公开
标题翻译：场发射器件及其制造方法
公开(公告)号：WO9709731A3
公开(公告)日：1997-04-03
申请号：PCT/US9613330
申请日：1996-08-19
申请人： FED CORP
发明人： JONES GARY W , ZIMMERMAN STEVEN M , SILVERNAIL JEFFREY A , JONES SUSAN K SCHWARTZ
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J
CPC分类号： H01J9/025 , H01J3/022 , H01J2201/319 , H01J2329/00 , Y10S428/938
摘要： A field emitter device formed by a veil process wherein a protective layer including a release layer is deposited on a gate electrode layer (62) for the device, the protective layer overlaying the circumscribing peripheral edge of the opening of the gate electrode layer (62) to protect the edge of the gate electrode layer (62) during etching of a field emitter cavity (72) in a dielectric material layer (30) on a substrate (12) and during the formation of a field emitter element (40) in the cavity by depositing a field emitter material through the opening (72). The protective layer is readily removed subsequent to completion of the cavity etching formation steps, to yield the field emitter device. The field emission device further includes a current limiter composition (14) for permitting high frequency emission of electrons from the field emitter element (40) at low turn-on voltage.

2. 发明申请

WO9709730A3 PEDESTAL EDGE EMITTER AND NON-LINEAR CURRENT LIMITERS FOR FIELD EMITTER DISPLAYS AND OTHER ELECTRON SOURCE APPLICATIONS 审中-公开
标题翻译：用于场发射显示器和其他电子源应用的PEDESTAL边缘发射极和非线性电流限制
公开(公告)号：WO9709730A3
公开(公告)日：1997-06-05
申请号：PCT/US9613329
申请日：1996-08-19
申请人： FED CORP
发明人： JONES GARY W , ZIMMERMAN STEVEN M , JONES SUSAN K SCHWARTZ , COSTA MICHAEL J , SILVERNAIL JEFFREY A
IPC分类号： H01J1/304 , H01J
CPC分类号： H01J1/3042 , H01J2201/30423 , H01J2201/319
摘要： A microelectronic field emitter device (50) comprising a substrate (78), a conductive pedestal (64) on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer (66) having an edge (68). The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50 wt.%), SiO2 + Cr (0 to 50 wt.%), SiO + Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate (240), an emitter conductor (242) on such substrate, and a current limiter stack (244) formed on said substrate, such stack having a top (246) and at least one edge (248, 250), a resistive strap (266) on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

3. 发明申请

WO9903126A8 FLASHOVER CONTROLLING SPACER FOR PARALLEL PLATE ELECTRON BEAM DEVICE 审中-公开
标题翻译：平行电子束装置的闪光控制间隔器
公开(公告)号：WO9903126A8
公开(公告)日：1999-04-15
申请号：PCT/US9813802
申请日：1998-07-02
申请人： FED CORP
发明人： JONES GARY W , ZIMMERMAN STEVEN M
IPC分类号： H01J9/26 , H01J29/02 , H01J29/86 , H01J31/12 , H01J29/70
CPC分类号： H01J9/261 , H01J29/862 , H01J31/123 , H01J2201/304
摘要： A structure to reduce the likelihood of flashover in a parallel plate electron beam array is disclosed. The structure may comprise a means for generating a low intensity electric field in the vicinity of a spacer (200) separating the parallel plate of the array (100), and the anode (300). The presence of the electric field in the vicinity of the spacer is not conductive to the occurrence of a surface supported flashover on the gates and emitters. The electric field means may be provided by a conductive coating (240) on one or more surfaces of the spacer. Alternatively, the electric field means may be provided by a conductive coating on a guard ring located within the array in the vicinity of the spacer. Methods of making the structure are also disclosed.
摘要翻译：公开了一种降低平行板电子束阵列中闪络的可能性的结构。该结构可以包括用于在分隔阵列（100）的平行板和阳极（300）的间隔物（200）附近产生低强度电场的装置。间隔物附近的电场的存在对于在栅极和发射极上发生表面支撑的闪络不是导电的。电场装置可以由间隔物的一个或多个表面上的导电涂层（240）提供。或者，电场装置可以通过位于阵列附近的保护环上的导电涂层来提供。还公开了制造该结构的方法。

4. 发明申请

WO9831044A3 A FIELD EMITTER DEVICE WITH A CURRENT LIMITER STRUCTURE 审中-公开
标题翻译：具有电流限制结构的场发射器件
公开(公告)号：WO9831044A3
公开(公告)日：1998-10-29
申请号：PCT/US9800149
申请日：1998-01-13
申请人： FED CORP
发明人： JONES GARY W , JONES SUSAN K S , MARINO JEFFREY , HO JOSEPH K , BOYSEL ROBERT MARK , ZIMMERMAN STEVEN M , LIU YACHIN , COSTA MICHAEL J , SILVERNAIL JEFFREY A
IPC分类号： H01J1/304 , H01L
CPC分类号： H01J1/3042 , H01J2201/319 , H01J2329/00
摘要： A field emitter device includes a column conductor (22), an insulator (23), and a resistor structure (32) for advantageously limiting current in a field emitter array. A wide column conductor (22) is deposited on an insulating substrate (21). An insulator (47) is laid over the column conductor (22). A high resistance layer (32) is placed on the insulator (23) and is physically isolated from the column conductor (22). The high resistance material may be chromium oxide or 10-50 wt.% Cr+SiO. A group of microtip electron emitters (30) is placed over the high resistance layer (32) to connect in an electrical series circuit the colum conductor (22), the high resistance layer (32), and the group of electron emitters (30). One or more layers of insulator (23) and a gate electrode (24), all with cavities for the electron emitters, are laid over the high resistance material (32). One layer of insulator is selected from a group of materials including SiC, SiO, and Si3N4. An anode plate (60) is attached with intermediate space (70) between the anode plate (60) and the microtip electron emitters (30) being evacuated.

5. 发明公开

EP0772884A4 FLAT DISPLAY SPACER STRUCTURE AND MANUFACTURING METHOD 失效
标题翻译：架结构用于平板显示装置及方法
公开(公告)号：EP0772884A4
公开(公告)日：1997-12-10
申请号：EP95930801
申请日：1995-07-25
申请人： FED CORP
发明人： JONES GARY W , ZIMMERMAN STEVEN M
IPC分类号： H01J9/24 , H01J29/02 , H01J29/86 , H01J31/12 , H01J5/48 , H01J63/02
CPC分类号： H01J9/242 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/864 , H01J2329/866
摘要： A spacer structure (10) for use in a flat panel display (100), and a corresponding flat panel display article (100) are disclosed, together with an appertaining method of fabricating the spacer structure utilizing a photosensitive precursor material which is selectively irradiated, developed and etchingly processed to produce shaped standoff elements for a unitary spacer structure. The spacer structure may be dimensionally fabricated to precisely align with a selected pixel region, comprising a single pixel or an array of pixels, e.g., a color (red, blue, green) triad.

6. 发明公开

EP0780022A4 FIELD EMISSION DISPLAY DEVICE 失效
标题翻译：场发射显示装置
公开(公告)号：EP0780022A4
公开(公告)日：1998-10-14
申请号：EP95931788
申请日：1995-09-07
申请人： FED CORP
发明人： JONES GARY W , ZIMMERMAN STEVEN M
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J1/304 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/02 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00
CPC分类号： G09G3/001 , G01R33/10 , G02B27/017 , G02B27/0172 , G02B27/0176 , G02B27/2235 , G02B2027/0132 , G02B2027/0136 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J29/028 , H01J29/94 , H01J31/127 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H01J2329/8625 , H01J2329/863 , H01J2329/864 , H04N5/70 , H04N5/7408 , H04N5/7491 , H04N13/0059 , H04N13/0285 , H04N13/0422 , H04N13/0427 , H04N13/0438 , H04N13/044 , H04N13/0456 , H04N13/0459 , H04N13/0497
摘要： A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.

7. 发明公开

EP0782762A4 FIELD EMISSION ARRAY MAGNETIC SENSOR DEVICES 失效
标题翻译：磁传感器设备使用现场发射矩阵
公开(公告)号：EP0782762A4
公开(公告)日：1997-12-03
申请号：EP95931727
申请日：1995-09-07
申请人： FED CORP
发明人： JONES GARY W , KIM JONG , ZIMMERMAN STEVEN M
IPC分类号： G01R33/10 , G02B27/00 , G02B27/01 , G02B27/22 , G09G3/00 , H01J3/02 , H01J9/02 , H01J9/24 , H01J29/94 , H01J31/12 , H04N5/70 , H04N5/74 , H04N13/00 , H01J1/02
CPC分类号： G02B27/017 , G01R33/10 , G02B27/0172 , G02B27/0176 , G02B27/2235 , G02B2027/0132 , G02B2027/0136 , G09G3/001 , H01J3/022 , H01J9/025 , H01J29/94 , H01J31/127 , H01J2201/304 , H01J2201/30426 , H01J2201/30457 , H01J2201/319 , H01J2209/385 , H01J2329/00 , H04N5/70 , H04N5/7408 , H04N5/7491 , H04N13/0059 , H04N13/0285 , H04N13/0422 , H04N13/0427 , H04N13/0438 , H04N13/044 , H04N13/0456 , H04N13/0459 , H04N13/0497
摘要： A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.

8. 发明专利

CA2296028A1 AN ELECTRODE STRUCTURE FOR HIGH RESOLUTION ORGANIC LIGHT-EMITTING DIODE DISPLAYS AND METHOD FOR MAKING THE SAME 未知
公开(公告)号：CA2296028A1
公开(公告)日：1999-01-21
申请号：CA2296028
申请日：1998-07-02
申请人： FED CORP
发明人： JONES GARY W , HOWARD WEBSTER E , ZIMMERMAN STEVEN M
IPC分类号： H01L51/52 , H05B33/26
摘要： The invention is directed to an electrode structure (500) for an organic lightemitting device display (10). The electrode structure includes a transparent electrode (510) and a high conductivity rib (550). The structure (500) provides top side light output and a low line resistance, and enables a high resolution display. The structure permits a display to be built on top of a silicon driver chip for active matrix addressing.

9. 发明专利

CA2295676A1 SEALING STRUCTURE FOR ORGANIC LIGHT EMITTING DEVICES 未知
公开(公告)号：CA2295676A1
公开(公告)日：1999-01-21
申请号：CA2295676
申请日：1998-07-09
申请人： FED CORP
发明人： HOWARD WEBSTER E , JONES GARY W , ZIMMERMAN STEVEN M
IPC分类号： H01L27/32 , H01L51/52 , H05B33/04 , H01L51/10 , H01L33/00
摘要： A sealing structure (190) for an organic light emitting device display (100). The sealing structure (190) comprises a metal film (175) overlying a dielectric film (150). The sealing structure (190) has low moisture and oxygen permeability. At least one of the metal layers (175) may react with moisture or oxygen to seal off pin holes. A net low stress sealing structure (190) may be formed by combining tensile and compressive films. The sealing structure (190) may be etched to create openings (160) for connection to outside circuitry. The innovative sealing structure (190) minimizes moisture leakage and vertical shorts between diode cathode (900) and anode (400).

10. 发明专利

CA2196040A1 FLAT DISPLAY SPACER STRUCTURE AND MANUFACTURING METHOD 未知
公开(公告)号：CA2196040A1
公开(公告)日：1996-02-08
申请号：CA2196040
申请日：1995-07-25
申请人： FED CORP
发明人： JONES GARY W , ZIMMERMAN STEVEN M
IPC分类号： H01J9/24 , H01J29/02 , H01J29/86 , H01J31/12 , H01J5/48 , H01J63/02
摘要： A spacer structure (10) for use in a flat panel display (100), and a corresponding flat panel display article (100) are disclosed, together with an appertaining method of fabricating the spacer structure utilizing a photosensitive precursor material which is selectively irradiated, developed and etchingly processed to produce shaped standoff elements for a unitary spacer structure. The spacer structure may be dimensionally fabricated to precisely align with a selected pixel region, comprising a single pixel or an array of pixels, e.g., a color (red, blue, green) triad.

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