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1. 发明申请

US20060035473A1 Method for stabilizing high pressure oxidation of a semiconductor device 失效
标题翻译：稳定半导体器件的高压氧化的方法
公开(公告)号：US20060035473A1
公开(公告)日：2006-02-16
申请号：US11251973
申请日：2005-10-17
申请人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-Shareef , Randhir Thakur
发明人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-Shareef , Randhir Thakur
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

2. 发明申请

US20050028936A1 Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
标题翻译：用于稳定半导体器件的高压氧化的装置
公开(公告)号：US20050028936A1
公开(公告)日：2005-02-10
申请号：US10933890
申请日：2004-09-02
申请人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-shareef , Randhir Thakur
发明人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-shareef , Randhir Thakur
IPC分类号： C30B33/00 , H01L21/316 , C23F1/00
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N20 and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。该催化剂用于在五（5）大气压至二十五（25）个大气压二氧化氮和600℃至750℃的温度范围的环境中，这是导致N2O变得超临界的条件。通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

3. 发明申请

US20050279283A1 Method for stabilizing high pressure oxidation of a semiconductor device 审中-公开
标题翻译：稳定半导体器件的高压氧化的方法
公开(公告)号：US20050279283A1
公开(公告)日：2005-12-22
申请号：US11210607
申请日：2005-08-23
申请人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-Shareef , Randhir Thakur
发明人： F. Gealy , Dave Chapek , Scott DeBoer , Husam Al-Shareef , Randhir Thakur
IPC分类号： C30B33/00 , H01L21/316 , C23C16/00 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28202 , C30B33/005 , H01L21/02183 , H01L21/02197 , H01L21/02271 , H01L21/31662 , H01L29/518 , Y10S438/903
摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
摘要翻译：公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用，这是导致N 2 O超级关键。通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。催化剂可以选自贵金属过渡金属及其氧化物。该组可以包括钯，铂，铱，铑，镍，银和金。

4. 发明申请

US20050227003A1 Methods of forming material over substrates 审中-公开
标题翻译：在基材上形成材料的方法
公开(公告)号：US20050227003A1
公开(公告)日：2005-10-13
申请号：US10822016
申请日：2004-04-08
申请人： Chris Carlson , Vishwanath Bhat , F. Gealy
发明人： Chris Carlson , Vishwanath Bhat , F. Gealy
IPC分类号： B05D5/12 , C23C16/00 , C23C16/40
CPC分类号： C23C16/45531 , C23C16/40
摘要： The invention includes ALD-type methods in which two or more different precursors are provided within a chamber at different and substantially non-overlapping times relative to one another to form a material, and the material is thereafter exposed to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.
摘要翻译：本发明包括ALD型方法，其中两个或多个不同的前体在腔室内以相对于彼此的不同和基本上不重叠的时间提供以形成材料，然后将材料暴露于一种或多种反应物以改变材料的组成。在特定方面，用于形成材料的前体是含金属的前体，用于改变材料组成的反应物包括氧，硅和/或氮。

5. 发明申请

US20050032302A1 METHODS OF FORMING CAPACITORS 失效
标题翻译：形成电容器的方法
公开(公告)号：US20050032302A1
公开(公告)日：2005-02-10
申请号：US10636035
申请日：2003-08-06
申请人： Vishwanath Bhat , Chris Carlson , F. Gealy
发明人： Vishwanath Bhat , Chris Carlson , F. Gealy
IPC分类号： H01G4/08 , H01G4/12 , H01G4/33 , H01L21/02 , H01L21/316 , H01L21/8234
CPC分类号： H01G4/085 , H01G4/1272 , H01G4/33 , H01L21/02178 , H01L21/0228 , H01L21/31616 , H01L21/31683 , H01L28/40
摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.
摘要翻译：形成电容器的方法包括在衬底上形成导电金属第一电极层，与在氧化温度以下的任何氧化度相比，导电金属可以在氧化温度以上高于可氧化的程度。在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给到导电金属第一电极层。至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

6. 发明申请

US20060251813A1 Methods of forming material over substrates 有权
标题翻译：在基材上形成材料的方法
公开(公告)号：US20060251813A1
公开(公告)日：2006-11-09
申请号：US11485658
申请日：2006-07-12
申请人： Chris Carlson , Vishwanath Bhat , F. Gealy
发明人： Chris Carlson , Vishwanath Bhat , F. Gealy
IPC分类号： C23C16/00
CPC分类号： C23C16/45531 , C23C16/40
摘要： The invention includes ALD-type methods in which two or more different precursors are provided within a chamber at different and substantially non-overlapping times relative to one another to form a material, and the material is thereafter exposed to one or more reactants to change a composition of the material. In particular aspects, the precursors utilized to form the material are metal-containing precursors, and the reactant utilized to change the composition of the material comprises oxygen, silicon, and/or nitrogen.
摘要翻译：本发明包括ALD型方法，其中两个或多个不同的前体在腔室内以相对于彼此的不同和基本上不重叠的时间提供以形成材料，然后将材料暴露于一种或多种反应物以改变材料的组成。在特定方面，用于形成材料的前体是含金属的前体，用于改变材料组成的反应物包括氧，硅和/或氮。

7. 发明申请

US20060234502A1 Method of forming titanium nitride layers 审中-公开
标题翻译：形成氮化钛层的方法
公开(公告)号：US20060234502A1
公开(公告)日：2006-10-19
申请号：US11105096
申请日：2005-04-13
申请人： Vishwanath Bhat , F. Gealy
发明人： Vishwanath Bhat , F. Gealy
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , H01L21/28088 , H01L27/10852 , H01L28/40 , H01L29/4966 , H01L29/78
摘要： The present invention is generally directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method includes forming a layer of titanium nitride by performing a deposition process, performing an anneal process on the layer of titanium nitride in a chlorine scavenging ambient to define an annealed layer of titanium nitride, and, prior to exposing the annealed layer of titanium nitride to an oxygen-containing ambient, forming a cap layer on the annealed layer of titanium nitride. In another illustrative embodiment, the method includes performing a chemical vapor deposition process in a first process chamber to form a layer of titanium nitride above a semiconducting substrate, transferring the substrate to a second process chamber, performing an anneal process on the layer of titanium nitride in a chlorine scavenging ambient within the second process chamber to produce an anneal layer of titanium nitride, and, prior to exposing the annealed layer of titanium nitride to an oxygen-containing ambient, forming a cap layer on the annealed layer of titanium nitride in the second process chamber.
摘要翻译：本发明一般涉及形成氮化钛层的方法。在一个说明性实施例中，该方法包括通过执行沉积工艺形成氮化钛层，在氯清除环境中对氮化钛层进行退火处理以限定氮化钛的退火层，并且在暴露将退火的氮化钛层与含氧环境反应，在氮化钛的退火层上形成覆盖层。在另一说明性实施例中，该方法包括在第一处理室中进行化学气相沉积工艺以在半导体衬底上形成氮化钛层，将衬底转移到第二工艺室，对氮化钛层进行退火处理在第二处理室内的氯清除环境中，以产生氮化钛的退火层，并且在将退火的氮化钛层暴露于含氧环境之前，在氮化钛的退火层上形成覆盖层第二处理室。

8. 发明申请

US20060046440A1 Methods of forming layers comprising epitaxial silicon 有权
公开(公告)号：US20060046440A1
公开(公告)日：2006-03-02
申请号：US10932151
申请日：2004-09-01
申请人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
发明人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
IPC分类号： H01L21/20
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02658
摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

9. 发明申请

US20050147751A1 Deposition methods 失效
公开(公告)号：US20050147751A1
公开(公告)日：2005-07-07
申请号：US11075017
申请日：2005-03-08
申请人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
发明人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
IPC分类号： C23C16/44 , C23C16/455 , C23C14/00 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455
摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

10. 发明申请

US20070075349A1 Semiconductor constructions 失效
标题翻译：半导体结构
公开(公告)号：US20070075349A1
公开(公告)日：2007-04-05
申请号：US11591254
申请日：2006-10-31
申请人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
发明人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译：本发明包括沉积贵金属的方法。提供基板。衬底具有第一区域和第二区域。第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。本发明还包括电容器结构和形成电容器结构的方法。

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