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1. 发明申请

US20120075313A1 INTERFEROMETRIC OPTICAL DISPLAY SYSTEM WITH BROADBAND CHARACTERISTICS 审中-公开
标题翻译：具有宽带特性的光纤显示系统
公开(公告)号：US20120075313A1
公开(公告)日：2012-03-29
申请号：US13314448
申请日：2011-12-08
申请人： Evgeni Gousev , Gang Xu , Marek Mienko
发明人： Evgeni Gousev , Gang Xu , Marek Mienko
IPC分类号： G06T1/00 , B05D5/06 , B05D5/12 , G02B26/00
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译：通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

2. 发明授权

US08077379B2 Interferometric optical display system with broadband characteristics 失效
标题翻译：干涉光学显示系统具有宽带特性
公开(公告)号：US08077379B2
公开(公告)日：2011-12-13
申请号：US12634576
申请日：2009-12-09
申请人： Evgeni Gousev , Gang Xu , Marek Mienko
发明人： Evgeni Gousev , Gang Xu , Marek Mienko
IPC分类号： G02B26/00 , G02B26/08 , G02F1/29
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译：通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

3. 发明申请

US20100128339A1 INTERFEROMETRIC OPTICAL DISPLAY SYSTEM WITH BROADBAND CHARACTERISTICS 失效
标题翻译：具有宽带特性的光纤显示系统
公开(公告)号：US20100128339A1
公开(公告)日：2010-05-27
申请号：US12634576
申请日：2009-12-09
申请人： Evgeni Gousev , Gang Xu , Marek Mienko
发明人： Evgeni Gousev , Gang Xu , Marek Mienko
IPC分类号： G02B26/00 , H05K3/00
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译：通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

4. 发明授权

US07643203B2 Interferometric optical display system with broadband characteristics 失效
标题翻译：干涉光学显示系统具有宽带特性
公开(公告)号：US07643203B2
公开(公告)日：2010-01-05
申请号：US11401023
申请日：2006-04-10
申请人： Evgeni Gousev , Gang Xu , Marek Mienko
发明人： Evgeni Gousev , Gang Xu , Marek Mienko
IPC分类号： G02B26/00 , G02B26/08 , G02F1/29
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译：通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

5. 发明申请

US20070236774A1 Interferometric optical display system with broadband characteristics 失效
标题翻译：干涉光学显示系统具有宽带特性
公开(公告)号：US20070236774A1
公开(公告)日：2007-10-11
申请号：US11401023
申请日：2006-04-10
申请人： Evgeni Gousev , Gang Xu , Marek Mienko
发明人： Evgeni Gousev , Gang Xu , Marek Mienko
IPC分类号： G02B26/00
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译：通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。

6. 发明申请

US20070258123A1 Electrode and interconnect materials for MEMS devices 失效
标题翻译：用于MEMS器件的电极和互连材料
公开(公告)号：US20070258123A1
公开(公告)日：2007-11-08
申请号：US11416920
申请日：2006-05-03
申请人： Gang Xu , Evgeni Gousev
发明人： Gang Xu , Evgeni Gousev
IPC分类号： G02F1/03 , G02F1/15
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00246
摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要翻译：提出了一种包括金属化半导体的微机电（MEMS）器件。金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。

7. 发明授权

US07369292B2 Electrode and interconnect materials for MEMS devices 失效
标题翻译：用于MEMS器件的电极和互连材料
公开(公告)号：US07369292B2
公开(公告)日：2008-05-06
申请号：US11416920
申请日：2006-05-03
申请人： Gang Xu , Evgeni Gousev
发明人： Gang Xu , Evgeni Gousev
IPC分类号： G02F1/03 , G02B26/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00246
摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要翻译：提出了一种包括金属化半导体的微机电（MEMS）器件。金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。

8. 发明授权

US07688494B2 Electrode and interconnect materials for MEMS devices 失效
标题翻译：用于MEMS器件的电极和互连材料
公开(公告)号：US07688494B2
公开(公告)日：2010-03-30
申请号：US12115395
申请日：2008-05-05
申请人： Gang Xu , Evgeni Gousev
发明人： Gang Xu , Evgeni Gousev
IPC分类号： G02F1/03 , G02B26/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00246
摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要翻译：提出了一种包括金属化半导体的微机电（MEMS）器件。金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。

9. 发明申请

US20080239449A1 ELECTRODE AND INTERCONNECT MATERIALS FOR MEMS DEVICES 失效
标题翻译：用于MEMS器件的电极和互连材料
公开(公告)号：US20080239449A1
公开(公告)日：2008-10-02
申请号：US12115395
申请日：2008-05-05
申请人： Gang Xu , Evgeni Gousev
发明人： Gang Xu , Evgeni Gousev
IPC分类号： G02F1/03 , G02B26/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00246
摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要翻译：提出了一种包括金属化半导体的微机电（MEMS）器件。金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。

10. 发明授权

US08222066B2 Eliminate release etch attack by interface modification in sacrificial layers 失效
标题翻译：通过牺牲层中的界面修改消除释放蚀刻攻击
公开(公告)号：US08222066B2
公开(公告)日：2012-07-17
申请号：US12061592
申请日：2008-04-02
申请人： Thanh Nghia Tu , Qi Luo , Chia Wei Yang , David Heald , Evgeni Gousev , Chih-Wei Chiang
发明人： Thanh Nghia Tu , Qi Luo , Chia Wei Yang , David Heald , Evgeni Gousev , Chih-Wei Chiang
IPC分类号： H01L21/00
CPC分类号： B81C1/00476 , B81B2201/047
摘要： Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.
摘要翻译：描述制造微机电系统（MEMS）装置的方法。在一些实施例中，该方法包括在衬底上形成牺牲层，处理牺牲层的至少一部分以形成经处理的牺牲部分，在经处理的牺牲部分的至少一部分上形成覆盖层，并且至少部分地去除经处理的牺牲部分以形成位于衬底和上覆层之间的空腔，上覆层暴露于空腔。

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