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1. 发明专利

JP2004002416A Monomer for chemically amplifying type photoresist composition 审中-公开
公开(公告)号：JP2004002416A
公开(公告)日：2004-01-08
申请号：JP2003134664
申请日：2003-05-13
申请人： Everlight Usa Inc , エバーライトユーエスエーインコーポレイティッドEverlight Usa,Inc.
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： G03F7/039 , C07C69/00 , C07D307/77 , C07D307/88 , C07D307/93 , C07D493/08 , C07D493/14 , C08F20/10
CPC分类号： C07D493/14 , C07D307/77 , C07D307/88
摘要： PROBLEM TO BE SOLVED: To provide a monomer for a chemically amplifying type photoresist composition. SOLUTION: This monomer for the chemically amplifying type photoresist composition is a compound having a structure expressed by formula 1 [wherein, R 1 is H or a 1-4C alkyl; R 2 is hydroxy, a 1-8C alkoxy or a 1-8C thioalkyl; G is (CH 2 ) n , O or S, wherein (n) is 0-4 integer; Rc is a lactone; and (m) is 1-3 integer]. The compound is suitable for synthesizing a polymer equipped with attaching and anti-dryetching properties, and especially suitable for synthesizing a polymer by copolymerizing it with the combination of other monomers. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2003345025A Chemically amplifying photoresist composition 审中-公开
标题翻译：化学放大胶片组合物
公开(公告)号：JP2003345025A
公开(公告)日：2003-12-03
申请号：JP2003134879
申请日：2003-05-13
申请人： Everlight Usa Inc , エバーライトユーエスエーインコーポレイティッド
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： C08F20/10 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a chemically amplifying photoresist composition.
SOLUTION: The chemically amplifying photoresist composition contains a polymer having a repeated structure of a unit expressed by formula (II). In formula (II), R
1 represents H or 1-4C alkyl group, R
2 represents a hydroxyl group, a 1-8C alkoxyl group or a 1-8C thioalkyl group, G represents (CH
2 )
n , O or S, wherein n is an integer 0 to 4, Rc represents a lactone group and m is an integer 1 to 3. The chemically amplifying photoresist composition is used for general lithographic processes, in particular, for lithographic processes with a light source at 193 nm wavelength to have extremely preferable resolution, profile and photosensitivity.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供化学放大光致抗蚀剂组合物。解决方案：化学放大光致抗蚀剂组合物含有具有由式（II）表示的单元的重复结构的聚合物。式（II）中，R SP 1表示H或1-4C烷基，R SP 2表示羟基，1-8C烷氧基或1-8C硫代烷基基团，G表示（CH 2 ），其中n为0〜4的整数，R c为内酯基，m为1〜3的整数。化学放大光致抗蚀剂组合物用于一般光刻工艺，特别是用于具有193nm波长的光源的光刻工艺，以具有非常优选的分辨率，分布和光敏性。版权所有（C）2004，JPO

3. 发明专利

JP2003342323A Resin for chemically amplified photoresist composition 有权
标题翻译：用于化学放大的光电组合物的树脂
公开(公告)号：JP2003342323A
公开(公告)日：2003-12-03
申请号：JP2003134823
申请日：2003-05-13
申请人： Everlight Usa Inc , エバーライトユーエスエーインコーポレイティッド
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： C08F20/10 , C08F220/30 , G03F7/039 , H01L21/027
CPC分类号： C08F220/30 , G03F7/0395 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a resin for a chemically amplified photoresist composition.
SOLUTION: The polymer has a structure of a unit (II) represented by the chemical formula 166 (wherein R
1 is H or a 1-4C alkyl group; R
2 is a hydroxy group, a 1-8C alkoxy group or a 1-8C thioalkyl group; G is (CH
2 )
n , O, or S; n is an integer of 0-4; Rc is a lactone group; and m is an integer of 1-3). The polymer exhibits excellent characteristics such as hydrophilicity and dry etching resistance, and is used for manufacturing a chemically amplified photoresist composition. The chemically amplified photoresist composition is used in a lithography process, particularly in a lithography process using a light source of a wavelength of 193 nm and is quite excellent in resolution, profiles and photosensitivity.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于化学放大光致抗蚀剂组合物的树脂。解决方案：聚合物具有由化学式166表示的单元（II）的结构（其中R 1 为H或1-4C烷基; R 2 < SP>是羟基，1-8C烷氧基或1-8C硫代烷基; G是（CH 2 ），N或S; n是 0-4的整数; R c为内酯基; m为1-3的整数）。该聚合物表现出优异的特性，例如亲水性和耐干蚀刻性，并且用于制造化学放大光致抗蚀剂组合物。化学放大光致抗蚀剂组合物用于光刻工艺，特别是在使用波长为193nm的光源的光刻工艺中，并且在分辨率，型材和光敏性方面非常优异。版权所有（C）2004，JPO

4. 发明专利

SG123557A1 Chemical amplified photoresist compositions 未知
公开(公告)号：SG123557A1
公开(公告)日：2006-07-26
申请号：SG200302488
申请日：2003-05-06
申请人： EVERLIGHT USA INC
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： C08F20/10 , G03F7/00 , G03F7/004 , G03F7/039 , H01L21/027

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