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1. 发明授权

US08587892B2 Method and apparatus for operating a storage device 失效
标题翻译：用于操作存储设备的方法和设备
公开(公告)号：US08587892B2
公开(公告)日：2013-11-19
申请号：US13575508
申请日：2011-01-27
申请人： Evangelos S. Eleftheriou , Walter Haeberle , Jens Jelitto , Angeliki Pantazi
发明人： Evangelos S. Eleftheriou , Walter Haeberle , Jens Jelitto , Angeliki Pantazi
IPC分类号： G11B5/584
CPC分类号： G11B5/584
摘要： Method for operating a storage device with a tape and a head wherein the head comprises a first and a second read element. Each read element is operable to detect servo-pattern of a particular servo band. The first and the second read element are arranged such that the tape at first passes one of both read elements and subsequently passes the other of both read elements when the tape moves in a predetermined longitudinal direction. A tape transport direction of the tape along the longitudinal direction is determined. The first read element is selected dependent on the determined tape transport direction, when the determined tape transport direction represents a direction where the tape at first passes the first read element and subsequently the second read element. Otherwise the second read element is selected. A position error signal is determined dependent on the selected read element.
摘要翻译：用于操作具有带和头的存储设备的方法，其中所述头部包括第一和第二读取元件。每个读取元件可操作以检测特定伺服带的伺服图案。第一和第二读取元件被布置成使得当磁带沿预定的纵向方向移动时，磁带首先通过两个读取元件中的一个并随后通过两个读取元件中的另一个元件。确定带沿着纵向的带传送方向。当所确定的磁带传送方向表示磁带首先通过第一读取单元的方向和随后的第二读取单元的方向时，第一读取单元根据确定的磁带传送方向来选择。否则选择第二个读取元素。取决于所选择的读取元素来确定位置误差信号。

2. 发明申请

US20120293889A1 METHOD AND APPARATUS FOR OPERATING A STORAGE DEVICE 失效
标题翻译：用于操作存储设备的方法和装置
公开(公告)号：US20120293889A1
公开(公告)日：2012-11-22
申请号：US13575508
申请日：2011-01-27
申请人： Evangelos S. Eleftheriou , Walter Haeberle , Jens Jelitto , Angeliki Pantazi
发明人： Evangelos S. Eleftheriou , Walter Haeberle , Jens Jelitto , Angeliki Pantazi
IPC分类号： G11B21/02 , G11B5/008
CPC分类号： G11B5/584
摘要： Method for operating a storage device with a tape and a head wherein the head comprises a first and a second read element. Each read element is operable to detect servo-pattern of a particular servo band. The first and the second read element are arranged such that the tape at first passes one of both read elements and subsequently passes the other of both read elements when the tape moves in a predetermined longitudinal direction. A tape transport direction of the tape along the longitudinal direction is determined. The first read element is selected dependent on the determined tape transport direction, when the determined tape transport direction represents a direction where the tape at first passes the first read element and subsequently the second read element. Otherwise the second read element is selected. A position error signal is determined dependent on the selected read element.
摘要翻译：用于操作具有带和头的存储设备的方法，其中所述头部包括第一和第二读取元件。每个读取元件可操作以检测特定伺服带的伺服图案。第一和第二读取元件被布置成使得当磁带沿预定的纵向方向移动时，磁带首先通过两个读取元件中的一个并随后通过两个读取元件中的另一个元件。确定带沿着纵向的带传送方向。当所确定的磁带传送方向表示磁带首先通过第一读取单元的方向和随后的第二读取单元的方向时，第一读取单元根据确定的磁带传送方向来选择。否则选择第二个读取元素。取决于所选择的读取元素来确定位置误差信号。

3. 发明授权

US08213105B2 Cancellation of time-varying periodic disturbances in servo control systems 有权
标题翻译：消除伺服控制系统中的时变周期性干扰
公开(公告)号：US08213105B2
公开(公告)日：2012-07-03
申请号：US12613409
申请日：2009-11-05
申请人： Nhan X. Bui , Evangelos S. Eleftheriou , Jens Jelitto , Angeliki Pantazi
发明人： Nhan X. Bui , Evangelos S. Eleftheriou , Jens Jelitto , Angeliki Pantazi
IPC分类号： G11B21/02 , G11B5/584
CPC分类号： G11B5/584 , G11B5/00813
摘要： Various embodiments for addressing time-varying periodic disturbances in a servo control system are provided. Each of a plurality of coefficients is updated based on an estimation of at least one disturbance frequency. The updated plurality of coefficients is provided to at least one peak filter modifying an input signal of the servo control system. The peak filter is operable in view of the updated plurality of coefficients to cancel at least one of the time-varying periodic disturbances.
摘要翻译：提供了用于解决伺服控制系统中的时变周期性干扰的各种实施例。基于至少一个干扰频率的估计来更新多个系数中的每一个。将更新的多个系数提供给修改伺服控制系统的输入信号的至少一个峰值滤波器。考虑到更新的多个系数，峰值滤波器可操作以消除时变周期性干扰中的至少一个。

4. 发明申请

US20130021845A1 PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL 有权
标题翻译：编程至少一个多级相变记忆细胞
公开(公告)号：US20130021845A1
公开(公告)日：2013-01-24
申请号：US13638311
申请日：2011-03-23
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Haris Pozidis , Abu Sebastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Haris Pozidis , Abu Sebastian
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0097 , G11C2013/0078
摘要： A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level.
摘要翻译：提供了一种方法，其包括通过流向PCM单元的至少一个电流脉冲对PCM单元进行编程以具有相应的确定单元状态的步骤，所述相应的确定单元状态至少由相应的确定电阻水平限定，步骤通过相应的位线脉冲和相应的字线脉冲来控制所述各个电流脉冲，以及根据PCM单元的实际电阻值来控制所述各个位线脉冲和所述各个字线脉冲的步骤，以及相应的参考电阻值被定义为确定阻力位。

5. 发明授权

US07405898B2 System and method for generating a position error signal (PES) reference curve in a data storage device 失效
标题翻译：用于在数据存储装置中产生位置误差信号（PES）参考曲线的系统和方法
公开(公告)号：US07405898B2
公开(公告)日：2008-07-29
申请号：US11424078
申请日：2006-06-14
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Charalampos Pozidis , Abu Sebastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Charalampos Pozidis , Abu Sebastian
IPC分类号： G11B5/596
CPC分类号： G11B5/596
摘要： System and method for generating a Position Error Signal (PES) reference curve in data storage devices are provided. The method includes scanning a distance of at least one Track Pitch (TP) in a cross-track direction in each servo-burst along a predefined path. One or more TPs in each servo-burst are scanned with a read head. The method further includes, calculating a plurality of samples of each differential signal. A differential signal corresponds to a first read-back signal and a second read-back signal. Thereafter, a plurality of normalized signals are determined. A normalized signal is determined by dividing each sample of the differential signal with a normalization constant. The plurality of normalized signals are combined to generate the PES reference curve.
摘要翻译：提供了在数据存储设备中生成位置误差信号（PES）参考曲线的系统和方法。该方法包括沿着预定义的路径在每个伺服突发中扫描交叉轨道方向上的至少一个轨道间距（TP）的距离。每个伺服脉冲串中的一个或多个TP被读取头扫描。该方法还包括：计算每个差分信号的多个采样。差分信号对应于第一读回信号和第二读回信号。此后，确定多个归一化信号。通过将差分信号的每个样本除以归一化常数来确定归一化信号。多个归一化信号被组合以产生PES参考曲线。

6. 发明授权

US09064571B2 Programming at least one multi-level phase change memory cell 有权
标题翻译：编程至少一个多级相变存储单元
公开(公告)号：US09064571B2
公开(公告)日：2015-06-23
申请号：US13638311
申请日：2011-03-23
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Haris Pozidis , Abu Sebastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Haris Pozidis , Abu Sebastian
IPC分类号： G11C11/00 , G11C13/00 , G11C11/56
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0097 , G11C2013/0078
摘要： A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level.
摘要翻译：提供了一种方法，其包括通过流向PCM单元的至少一个电流脉冲对PCM单元进行编程以具有相应的确定单元状态的步骤，所述相应的确定单元状态至少由相应的确定电阻水平限定，步骤通过相应的位线脉冲和相应的字线脉冲来控制所述各个电流脉冲，以及根据PCM单元的实际电阻值来控制所述各个位线脉冲和所述各个字线脉冲的步骤，以及相应的参考电阻值被定义为确定阻力位。

7. 发明申请

US20110069539A1 PROGRAMMING MULTI-LEVEL PHASE CHANGE MEMORY CELLS 失效
标题翻译：编程多级相变记忆细胞
公开(公告)号：US20110069539A1
公开(公告)日：2011-03-24
申请号：US12887850
申请日：2010-09-22
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Charalampos Pozidis , Abu Sabastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Charalampos Pozidis , Abu Sabastian
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C2013/0054 , G11C2013/0092
摘要： A method and a feedback controller for programming at least one multi-level phase-change memory cell with a programming signal. The method and feedback controller include a sequence of write pulses applied to the multi-level phase change memory cell, wherein the feedback controller adjusts in real time at least one parameter of each write pulse as a function of a determined resistance error of the phase-change memory cell with respect to a desired reference resistance level.
摘要翻译：一种用于使用编程信号来编程至少一个多电平相变存储器单元的方法和反馈控制器。方法和反馈控制器包括施加到多电平相变存储器单元的写入脉冲序列，其中反馈控制器实时调整每个写入脉冲的至少一个参数作为所确定的相位阻抗误差的函数，相对于期望的参考电阻电平改变存储器单元。

8. 发明授权

US07207119B1 Controller 失效
标题翻译：控制器
公开(公告)号：US07207119B1
公开(公告)日：2007-04-24
申请号：US11297104
申请日：2005-12-08
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Charalampos Pozidis , Abu Sebastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Charalampos Pozidis , Abu Sebastian
IPC分类号： G01B5/20
CPC分类号： G11B9/1436 , G01Q80/00 , G11B9/1481 , Y10S977/85
摘要： The present invention relates to a controller comprising: at least two input terminals, each of which is configured to receive one of at least two input signals comprising information on a positioning of a scanner relative to a reference medium, and an output terminal, which is connectable to the scanner and configured to transmit an output signal, which is used for controlling the positioning of the scanner, wherein the controller further comprises: a processing unit being operable to designate a corresponding weighting function to each of the at least two input signals, a magnitude of the corresponding weighting function being selected to be in accordance with a noise profile of the input signal to which it has been designated; the processing unit further being operable to simultaneously use the at least two input signals, each with the corresponding weighting function designated thereto, to design a transfer function of the controller for use in the production of the output signal.
摘要翻译：控制器技术领域本发明涉及一种控制器，包括：至少两个输入端子，每个输入端子被配置为接收至少两个输入信号中的一个，包括关于扫描器相对于参考介质的定位的信息，以及输出端子，可连接到扫描仪并且被配置为传输用于控制扫描仪的定位的输出信号，其中控制器还包括：处理单元，可操作以将至少两个输入信号中的每一个指定对应的加权函数，相应的加权函数的大小被选择为与其已被指定的输入信号的噪声分布一致; 处理单元还可操作以同时使用至少两个输入信号，每个输入信号具有指定的相应加权函数，以设计控制器的传递函数，以用于产生输出信号。

9. 发明申请

US20110242884A1 Programming at Least One Multi-Level Phase Change Memory Cell 审中-公开
标题翻译：至少编写一个多级相变存储单元
公开(公告)号：US20110242884A1
公开(公告)日：2011-10-06
申请号：US13069512
申请日：2011-06-06
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Charalampos Pozidis , Abu Sebastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Charalampos Pozidis , Abu Sebastian
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C2013/0057 , G11C2013/0076 , G11C2013/0085
摘要： A method of applying at least one programming pulse to the a PCM cell for programming the PCM cell to have a respective definite cell state, the definite cell state being defined by a definite resistance level using an annealing pulse or a melting pulse. The respective definite cell state represents two information entities, a step of applying a first reading pulse to the respective programmed PCM cell to provide a first resistance value, a step of applying at least a second reading pulse to the respective programmed PCM cell to provide a second resistance value, the first reading pulse and the second reading pulse being different pulses; and a step of determining the respective definite cell state of the respective programmed PCM cell dependent on the respective provided first resistance value and the respective provided second resistance value.
摘要翻译：一种向PCM单元施加至少一个编程脉冲以将PCM单元编程为具有相应的确定单元状态的方法，该定单元状态由使用退火脉冲或熔化脉冲的确定电阻水平定义。相应的确定单元状态表示两个信息实体，将第一读取脉冲施加到相应编程的PCM单元以提供第一电阻值的步骤;将至少第二读取脉冲施加到相应编程的PCM单元以提供第二电阻值，第一读取脉冲和第二读取脉冲是不同的脉冲; 以及取决于相应提供的第一电阻值和相应提供的第二电阻值来确定相应编程PCM单元的相应确定单元状态的步骤。

10. 发明申请

US20110051508A1 MULTILEVEL PROGRAMMING OF PHASE CHANGE MEMORY 有权
标题翻译：相位变化记忆的多重编程
公开(公告)号：US20110051508A1
公开(公告)日：2011-03-03
申请号：US12861947
申请日：2010-08-24
申请人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Charalampos Pozidis , Abu Sebastian
发明人： Evangelos S. Eleftheriou , Angeliki Pantazi , Nikolaos Papandreou , Charalampos Pozidis , Abu Sebastian
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C11/21 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C2013/0071 , G11C2013/0092 , G11C2213/79
摘要： A method and device for performing a program operation of a phase change memory (PCM) cell. The method includes the steps of applying one or more programming pulses according to a predefined programming scheme to achieve a target resistance level of the PCM cell, wherein the programming scheme is operable to perform in a first programming mode one or more annealing steps to approach the target resistance, wherein the programming scheme is operable to perform in a second programming mode one or more melting steps, wherein the programming scheme is operable to start in the first programming mode and to switch to the second programming mode if the target resistance level of the PCM cell has been undershot in the first programming mode.
摘要翻译：一种用于执行相变存储器（PCM）单元的编程操作的方法和装置。该方法包括以下步骤：根据预定义的编程方案应用一个或多个编程脉冲以实现PCM单元的目标电阻电平，其中编程方案可操作以在第一编程模式下执行一个或多个退火步骤以接近目标电阻，其中所述编程方案可操作以在第二编程模式下执行一个或多个熔化步骤，其中所述编程方案可操作以在所述第一编程模式下启动并且如果所述编程方案的目标电阻水平 PCM单元在第一个编程模式下已经不足。

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