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    • 2. 发明申请
    • Screening using polarization anisotropy in FRET emissions
    • 在FRET排放中使用偏振各向异性进行筛选
    • US20080206888A1
    • 2008-08-28
    • US12069724
    • 2008-02-11
    • Steven C. MillerPaul B. ComitaChristopher B. ShumateEvan F. Cromwell
    • Steven C. MillerPaul B. ComitaChristopher B. ShumateEvan F. Cromwell
    • G01N33/566G01N21/76
    • G01N33/542G01N2500/00
    • Methods and apparatus are described for detecting specific binding between first and second chemical entities. The first chemical entity in association with a first fluorophore is immobilized. The second chemical entity is allowed to bind with the immobilized first chemical entity. The second chemical entity is or becomes coupled to a second fluorophore, which forms a FRET pair with the first fluorophore. The bound chemical entities are exposed to radiation at an excitation frequency for either the first or the second fluorophore, and polarization anisotropy of a FRET fluorescent signal from the bound chemical entities is measured to detect specific binding between the first and second chemical entities. Techniques are also disclosed for detecting whether a FRET interaction is occurring between a first chemical entity including a donor fluorophore and a second chemical entity including an acceptor fluorophore, using simultaneous anisotropy measurements at the wavelengths of the donor and acceptor fluorophores.
    • 描述了用于检测第一和第二化学实体之间的特异性结合的方法和装置。 与第一荧光团相关联的第一化学实体被固定化。 允许第二化学实体与固定化的第一化学实体结合。 第二化学实体是或连接到与第一荧光团形成FRET对的第二荧光团。 结合的化学实体以第一或第二荧光团的激发频率暴露于辐射,并且测量来自结合的化学实体的FRET荧光信号的偏振各向异性以检测第一和第二化学实体之间的特异性结合。 还公开了用于检测在包括供体荧光团的第一化学实体和包括受体荧光团的第二化学实体之间是否发生FRET相互作用的技术,其使用在供体和受体荧光团的波长处的同时各向异性测量。
    • 4. 发明授权
    • Screening using polarization anisotropy in FRET emissions
    • 在FRET排放中使用偏振各向异性进行筛选
    • US07674588B2
    • 2010-03-09
    • US12069724
    • 2008-02-11
    • Steven C. MillerPaul B. ComitaChristopher B. ShumateEvan F. Cromwell
    • Steven C. MillerPaul B. ComitaChristopher B. ShumateEvan F. Cromwell
    • C12Q1/68G01N33/53C07H21/02C07H21/04
    • G01N33/542G01N2500/00
    • Methods and apparatus are described for detecting specific binding between first and second chemical entities. The first chemical entity in association with a first fluorophore is immobilized. The second chemical entity is allowed to bind with the immobilized first chemical entity. The second chemical entity is or becomes coupled to a second fluorophore, which forms a FRET pair with the first fluorophore. The bound chemical entities are exposed to radiation at an excitation frequency for either the first or the second fluorophore, and polarization anisotropy of a FRET fluorescent signal from the bound chemical entities is measured to detect specific binding between the first and second chemical entities. Techniques are also disclosed for detecting whether a FRET interaction is occurring between a first chemical entity including a donor fluorophore and a second chemical entity including an acceptor fluorophore, using simultaneous anisotropy measurements at the wavelengths of the donor and acceptor fluorophores.
    • 描述了用于检测第一和第二化学实体之间的特异性结合的方法和装置。 与第一荧光团相关联的第一化学实体被固定化。 允许第二化学实体与固定化的第一化学实体结合。 第二化学实体是或连接到与第一荧光团形成FRET对的第二荧光团。 结合的化学实体以第一或第二荧光团的激发频率暴露于辐射,并且测量来自结合的化学实体的FRET荧光信号的偏振各向异性以检测第一和第二化学实体之间的特异性结合。 还公开了用于检测在包括供体荧光团的第一化学实体和包括受体荧光团的第二化学实体之间是否发生FRET相互作用的技术,其使用在供体和受体荧光团的波长处的同时各向异性测量。
    • 8. 发明授权
    • Silicon-containing layer deposition with silicon compounds
    • 含硅层沉积与硅化合物
    • US07540920B2
    • 2009-06-02
    • US10688797
    • 2003-10-17
    • Kaushal K. SinghPaul B. ComitaLance A. ScudderDavid K. Carlson
    • Kaushal K. SinghPaul B. ComitaLance A. ScudderDavid K. Carlson
    • C30B21/02
    • C07F7/0896C01B33/04C01B33/107C07F7/12C23C16/24C23C16/30
    • Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX6, Si2RX6, Si2RX8, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.
    • 本发明的实施方案通常提供硅化合物的组合物和使用硅化合物沉积含硅膜的方法。 该方法采用将硅化合物引入衬底表面,并将一部分硅化合物硅基体作为含硅膜沉积。 配体是硅化合物的另一部分,并且被释放为原位蚀刻剂。 原位蚀刻剂支持选择性硅外延的生长。 硅化合物包括SiRX6,Si2RX6,Si2RX8,其中X独立地是氢或卤素,R是碳,硅或锗。 硅化合物还包括包含三个硅原子,第四碳原子,硅或锗的氢原子或卤原子与至少一个卤素的化合物,以及包含四个硅原子,第五个碳原子,硅或锗的化合物和 氢或卤素与至少一个卤素。