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1. 发明授权

US06697403B2 Light-emitting device and light-emitting apparatus using the same 有权
标题翻译：发光装置及使用其的发光装置
公开(公告)号：US06697403B2
公开(公告)日：2004-02-24
申请号：US10122416
申请日：2002-04-16
申请人： Eun-kyung Lee , Byoung-lyong Choi , Jae-ho You
发明人： Eun-kyung Lee , Byoung-lyong Choi , Jae-ho You
IPC分类号： H01S500
CPC分类号： H01L33/24 , H01L33/105 , H01L33/34 , H01L33/42 , H01L33/465
摘要： A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction. A resonator structure to resonate only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure, and the directional property of the emitted light can be improved further than that of conventional light-emitting devices.
摘要翻译：发光装置和使用其的发光装置。发光器件包括n型或p型衬底，在衬底的第一表面上形成具有与衬底相反的预定掺杂剂的掺杂区域到超浅深度，使得光通过量子限制效应从掺杂区域和衬底之间的pn结发射，改善从pn结发射的光的波长的选择性的谐振器，以及形成在第一表面上的第一和第二电极分别用于注入空穴和电子的衬底的表面。发光器件包括超浅掺杂区域，使得其可以在p-n结中发射具有量子限制效应的光。仅在特定的光波长范围内谐振的谐振器结构被添加到发光器件中，从而以优异的效率显着地提高了光波长的选择性。通过谐振器结构放大发光强度，与现有的发光元件相比，能够进一步提高发光的取向性。

2. 发明授权

US06930330B2 Silicon optoelectronic device and light emitting apparatus using the same 有权
标题翻译：硅光电子器件和使用其的发光装置
公开(公告)号：US06930330B2
公开(公告)日：2005-08-16
申请号：US10122421
申请日：2002-04-16
申请人： Byoung-lyong Choi , Seung-ho Nam , Eun-kyung Lee , Jae-ho You , Jun-young Kim
发明人： Byoung-lyong Choi , Seung-ho Nam , Eun-kyung Lee , Jae-ho You , Jun-young Kim
IPC分类号： H01L33/24 , H01L31/10 , H01L33/06 , H01L33/34 , H01L33/00
CPC分类号： H01L33/34 , B82Y10/00 , H01L31/0232 , H01L31/035281
摘要： A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further include a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
摘要翻译：提供硅光电子器件和使用硅光电子器件的发光设备。硅光电子器件包括：基于n型或p型硅的衬底; 掺杂区域形成在衬底的一个表面上并掺杂到具有预定掺杂剂的超浅深度以与衬底相反的类型，以通过量子限制在掺杂区域和掺杂区域之间的pn结中提供光电转换效应基材; 以及形成在所述基板上以电连接到所述掺杂区域的第一和第二电极。硅光电子器件还可以包括形成在衬底的一个表面上的控制层，以在形成掺杂区域中用作掩模，并且将掺杂区域的深度限制为超浅。硅光电子器件具有优异的效率，可用作发光器件或光接收器件。由于光电器件使用硅作为基材，所以可以以低成本制造。

3. 发明授权

US08513101B2 Method of synthesizing nanowires 有权
标题翻译：纳米线合成方法
公开(公告)号：US08513101B2
公开(公告)日：2013-08-20
申请号：US12560768
申请日：2009-09-16
申请人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
发明人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Byung-sung Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02532 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L21/02603 , H01L21/0262 , H01L21/02639
摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.
摘要翻译：一种合成纳米线的方法。该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线）方法。

4. 发明授权

US08330142B2 Quantum dot light emitting device having quantum dot multilayer 有权
标题翻译：量子点发光器件具有量子点多层
公开(公告)号：US08330142B2
公开(公告)日：2012-12-11
申请号：US12708664
申请日：2010-02-19
申请人： Kyung-sang Cho , Byoung-lyong Choi , Eun-kyung Lee , Tae-ho Kim , Sang-jin Lee
发明人： Kyung-sang Cho , Byoung-lyong Choi , Eun-kyung Lee , Tae-ho Kim , Sang-jin Lee
IPC分类号： H01L21/02
CPC分类号： H01L51/502 , B82Y20/00 , B82Y30/00 , H01L33/14 , H01L51/0003 , H01L51/0007 , H01L51/5036 , H01L51/5048 , H01L51/5096
摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.
摘要翻译：量子点发光器件包括：衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与量子点发光层的能带电平。

5. 发明申请

US20050074969A1 Contact structure of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触结构及其形成方法
公开(公告)号：US20050074969A1
公开(公告)日：2005-04-07
申请号：US10915538
申请日：2004-08-11
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L29/41 , H01L21/20 , H01L21/265 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/82 , H01L21/8238 , H01L23/48 , H01L23/52 , H01L27/04 , H01L29/08 , H01L29/78
CPC分类号： H01L21/823814 , H01L21/26533 , H01L21/28506 , H01L21/823878 , H01L24/05 , H01L29/0847 , H01L29/78 , H01L2924/13091 , H01L2924/00
摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
摘要翻译：半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层在衬底中的导电掺杂层下面。

6. 发明授权

US09144962B2 Graphene-polymer layered composite and process for preparing the same 有权
标题翻译：石墨烯聚合物层状复合材料及其制备方法
公开(公告)号：US09144962B2
公开(公告)日：2015-09-29
申请号：US13094154
申请日：2011-04-26
申请人： Eun-kyung Lee , Byoung-lyong Choi , Choong-ho Yu
发明人： Eun-kyung Lee , Byoung-lyong Choi , Choong-ho Yu
IPC分类号： B32B3/00 , B32B37/02 , B32B37/24 , B32B9/00 , B32B27/06 , B82Y30/00 , H01B1/04
CPC分类号： B32B37/24 , B32B9/007 , B32B27/06 , B32B2037/243 , B32B2037/246 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B82Y30/00 , H01B1/04 , Y10T156/10 , Y10T428/24355 , Y10T428/24802 , Y10T428/31855
摘要： A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.
摘要翻译：提供了石墨烯 - 聚合物层状复合材料及其制造方法。石墨烯 - 聚合物层状复合物包括围绕石墨烯片的聚合物层，并且可以包括交替堆叠构型的许多聚合物层和石墨烯片。石墨烯 - 聚合物层状复合材料具有聚合物的特征，因为它提供了灵活性，易于制造，低制造成本和低热导率。石墨烯聚合物层状复合材料也具有石墨烯的特征，因为其具有高导电性。由于导热性低，导电性高，石墨烯 - 聚合物层状复合材料可用于电极，电子器件和热电材料。

7. 发明申请

US20060252171A1 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
公开(公告)号：US20060252171A1
公开(公告)日：2006-11-09
申请号：US11350751
申请日：2006-02-10
申请人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00 , A61B1/04 , H04N7/18
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

8. 发明授权

US07015560B2 Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit comprising the same 有权
标题翻译：光接收装置及其制造方法以及包括该光接收装置的光电集成电路
公开(公告)号：US07015560B2
公开(公告)日：2006-03-21
申请号：US10779741
申请日：2004-02-18
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L31/075
CPC分类号： H01L27/1446
摘要： A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow depth in the intrinsic region; and a second region formed to a deep depth in the intrinsic region and distanced from the first region, wherein the first and second regions are doped with different conductivity types. The light-receiving device can shorten the transit time of holes with slow mobility. Therefore, no response delay occurs, and thus, a high response speed can be accomplished.
摘要翻译：提供了一种光接收装置及其制造方法和包括该光接收装置的光电集成电路。光接收装置包括：基板; 形成在所述基板上的本征区域; 在本征区域中形成为浅深度的第一区域; 以及第二区域，其形成为本征区域中的深度并与第一区域隔开，其中第一和第二区域掺杂有不同的导电类型。光接收装置可以缩短移动性差的穿孔时间。因此，没有响应延迟发生，因此可以实现高响应速度。

9. 发明申请

US20050092244A1 Diffusion system 失效
标题翻译：扩散系统
公开(公告)号：US20050092244A1
公开(公告)日：2005-05-05
申请号：US10912059
申请日：2004-08-06
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L21/223 , C23C8/06 , C23C16/44 , C23C16/448 , C23C16/452 , C23C16/54 , C30B31/06 , C30B31/10 , C30B31/16 , C30B35/00 , H01L21/22 , C23C16/00
CPC分类号： C30B31/10 , C23C8/06 , C30B31/06 , C30B31/165 , C30B35/00
摘要： Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
摘要翻译：提供了一种用于在晶片中形成掺杂层的扩散系统。扩散系统包括用于产生掺杂气体的起泡器; 预混合器，其将掺杂气体与反应性气体预混合并预热气体混合物; 主室，其中气体混合物与晶片反应; 缓冲箱，其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

10. 发明授权

US07649192B2 Nano wires and method of manufacturing the same 有权
标题翻译：纳米线和制造方法相同
公开(公告)号：US07649192B2
公开(公告)日：2010-01-19
申请号：US11369859
申请日：2006-03-08
申请人： Byoung-lyong Choi , Eun-kyung Lee
发明人： Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L29/06
CPC分类号： B82Y30/00 , C30B11/12 , C30B29/605 , Y10S977/721 , Y10S977/762 , Y10S977/768 , Y10S977/789 , Y10S977/81 , Y10S977/938
摘要： Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：提供纳米线及其制造方法。该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层以形成催化剂，将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

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