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1. 发明申请

US20090086566A1 SEMICONDUCTOR MEMORY DEVICE CAPABLE OF PERFORMING PAGE MODE OPERATION 有权
标题翻译：可执行页面模式操作的半导体存储器件
公开(公告)号：US20090086566A1
公开(公告)日：2009-04-02
申请号：US12328099
申请日：2008-12-04
申请人： Eun-Suk KANG , So-Hoe KIM
发明人： Eun-Suk KANG , So-Hoe KIM
IPC分类号： G11C8/18
CPC分类号： G11C8/04 , G11C7/1018 , G11C8/18
摘要： A semiconductor memory device adapted to perform a page mode operation comprises a first address transition detector adapted generate a first clock signal upon detecting a transition of a start address, a second address transition detector adapted to generate a second clock signal upon detecting transition of a lower bit of the start address and after the first clock signal is generated, and an address controller adapted to sequentially increment the start address in response to a transition of the second clock signal. The address controller sequentially accesses memory cells selected by the start address and the incremented start address in response to a transition of the second clock signal.
摘要翻译：适于执行页面模式操作的半导体存储器件包括：第一地址转换检测器，其适于在检测到起始地址的转变时产生第一时钟信号;第二地址转换检测器，适于在检测到较低的转换时产生第二时钟信号并且在产生第一时钟信号之后，以及地址控制器，其适于响应于第二时钟信号的转变而顺序地增加开始地址。地址控制器响应于第二时钟信号的转变，顺序地访问由起始地址和增加的开始地址选择的存储器单元。

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