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    • 4. 发明申请
    • Image display
    • 图像显示
    • US20070216279A1
    • 2007-09-20
    • US11657694
    • 2007-01-25
    • Naohiro HoriuchiTakuya TakahashiTakaaki SuzukiEtsuko NishimuraToshiaki Kusunoki
    • Naohiro HoriuchiTakuya TakahashiTakaaki SuzukiEtsuko NishimuraToshiaki Kusunoki
    • H01J19/06H01J1/62
    • H01J31/127H01J29/04
    • It is an object of the present invention to provide an image display using a thin film electronic source having a structure for separating picture elements in a self-alignment manner. The structure of bus wiring (scanning line) for powering the electronic source is formed by a stacked structure including a lower layer 17 made of an alloy of CrMo, an intermediate layer 18 made of Al or an alloy of Al, and an upper layer 19 made of Cr, from a cathode substrate 10. The CrMo alloy in the lower layer 17 includes 30 wt % or more of Mo. Such a stacked structure can be used to process one side of the lower layer 17 to form an undercut relative to the intermediate layer 18. The undercut serves as a picture element separating structure in sputtering of an upper electrode 13 of the electronic source and achieves picture element separation in a self-alignment manner.
    • 本发明的目的是提供一种使用具有以自对准方式分离图像元素的结构的薄膜电子源的图像显示。 用于为电子源供电的总线布线(扫描线)的结构通过堆叠结构形成,该堆叠结构包括由AlM或Al合金制成的中间层18和CrMo的合金制成的下层17和上层19 由阴极基板10制成。 下层17中的CrMo合金包括30重量%以上的Mo。这种堆叠结构可用于处理下层17的一侧以相对于中间层18形成底切。 底切用作电子源的上电极13的溅射中的像素分离结构,以自对准的方式实现像素分离。
    • 8. 发明授权
    • Method for producing microstructure
    • 生产微结构的方法
    • US08871433B2
    • 2014-10-28
    • US13501897
    • 2010-10-14
    • Takaaki SuzukiHidetoshi KoteraIsaku KannoDaisuke Hiramaru
    • Takaaki SuzukiHidetoshi KoteraIsaku KannoDaisuke Hiramaru
    • G03F7/20G03F7/00B81C1/00B81C99/00G03F1/00G03F1/38
    • G03F7/0037B81C1/00126B81C99/002G03F1/14G03F1/38G03F1/50G03F7/2002G03F7/201
    • The disclosed method for producing a microstructure can form a complicated three-dimensionally formed microstructure with few steps.A first mask pattern (22) containing a light transmitting section and a light blocking section is disposed along an unexposed photosensitive resin (42), and a second mask pattern (32) containing a light transmitting section and a light blocking section is disposed on the reverse side of the first mask pattern (22) from the photosensitive resin (42). Additionally, by means of integrally rotating the photosensitive resin (42) and the first mask pattern (22) around a central axis (Z) that passes through the photosensitive resin (42) and the first mask pattern (22), and at the same time radiating exposure light from the reverse side of the second mask pattern (32) from the photosensitive resin (42) and the first mask pattern (22) in a direction that is inclined obliquely with respect to the direction of the central axis (Z), the light beam of the exposure light that is transmitted through the light transmitting section of the second mask pattern (32) and the light transmitting section of the first mask pattern (22) exposes the photosensitive resin (42).
    • 所公开的微结构制造方法可以以几步形成复杂的三维形成的微结构。 沿着未曝光的感光性树脂(42)设置包含透光部和遮光部的第一掩模图案(22),将含有透光部和遮光部的第二掩模图案(32)配置在 第一掩模图案(22)与感光性树脂(42)的反面。 此外,通过使感光性树脂(42)和第一掩模图案(22)围绕通过感光性树脂(42)和第一掩模图案(22)的中心轴(Z)一体地旋转,并且在同一 在相对于中心轴线(Z)的方向倾斜倾斜的方向上,从第二掩模图案的背面照射来自感光性树脂(42)和第一掩模图案(22)的曝光光, 通过第二掩模图案(32)的透光部分透射的曝光光的光束和第一掩模图案(22)的透光部分暴露感光性树脂(42)。
    • 9. 发明申请
    • METHOD FOR PRODUCING MICROSTRUCTURE
    • 生产微结构的方法
    • US20120214104A1
    • 2012-08-23
    • US13501897
    • 2010-10-14
    • Takaaki SuzukiHidetoshi KoteraIsaku KannoDaisuke Hiramaru
    • Takaaki SuzukiHidetoshi KoteraIsaku KannoDaisuke Hiramaru
    • G03F7/20
    • G03F7/0037B81C1/00126B81C99/002G03F1/14G03F1/38G03F1/50G03F7/2002G03F7/201
    • The disclosed method for producing a microstructure can form a complicated three-dimensionally formed microstructure with few steps.A first mask pattern (22) containing a light transmitting section and a light blocking section is disposed along an unexposed photosensitive resin (42), and a second mask pattern (32) containing a light transmitting section and a light blocking section is disposed on the reverse side of the first mask pattern (22) from the photosensitive resin (42). Additionally, by means of integrally rotating the photosensitive resin (42) and the first mask pattern (22) around a central axis (Z) that passes through the photosensitive resin (42) and the first mask pattern (22), and at the same time radiating exposure light from the reverse side of the second mask pattern (32) from the photosensitive resin (42) and the first mask pattern (22) in a direction that is inclined obliquely with respect to the direction of the central axis (Z), the light beam of the exposure light that is transmitted through the light transmitting section of the second mask pattern (32) and the light transmitting section of the first mask pattern (22) exposes the photosensitive resin (42).
    • 所公开的微结构制造方法可以以几步形成复杂的三维形成的微结构。 沿着未曝光的感光性树脂(42)设置包含透光部和遮光部的第一掩模图案(22),将含有透光部和遮光部的第二掩模图案(32)配置在 第一掩模图案(22)与感光性树脂(42)的反面。 此外,通过使感光性树脂(42)和第一掩模图案(22)围绕通过感光性树脂(42)和第一掩模图案(22)的中心轴(Z)一体地旋转,并且在同一 在相对于中心轴线(Z)的方向倾斜倾斜的方向上,从第二掩模图案的背面照射来自感光性树脂(42)和第一掩模图案(22)的曝光光, 通过第二掩模图案(32)的透光部分透射的曝光光的光束和第一掩模图案(22)的透光部分暴露感光性树脂(42)。