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    • 4. 发明申请
    • Coating composition for electrical conductors and method of producing such a composition
    • 电导体用涂料组合物及其制备方法
    • US20100063194A1
    • 2010-03-11
    • US12310707
    • 2007-09-04
    • Sener AlbayrakCarsten Becker-WillingerMichael VeithOral Cenk Aktas
    • Sener AlbayrakCarsten Becker-WillingerMichael VeithOral Cenk Aktas
    • C09D175/04C09D5/00
    • C09D7/1225C08K3/22C08K3/30C08K9/04C08K9/08C09D7/62C09D7/67C09D7/68H01B3/006
    • The invention relates to a composition for coating electrical conductors and a method of producing such a composition.In order to provide a coating composition for electrical conductors, the partial-discharge resistance of which coating composition is increased significantly compared with prior-art solutions while the insulation layer produced remains highly extensible, a composition is suggested within the scope of the invention which consists of 1-50 wt. % of microparticles with a selectively adjusted electronic defect structure in the crystal lattice, the defect structure making the valence electrons more easily polarizable, and an organic and/or organic-inorganic matrix, the microparticles with the selectively adjusted electronic defect structure being made up of oxides, sulfides, selenides and/or tellurides of elements of the series comprising silicon, zinc, aluminum, tin, boron, germanium, gallium, lead, the transition metals and the lanthanides and actinides, particularly of the series comprising silicon, titanium, zinc, yttrium, cerium, vanadium, hafnium, zirconium, nickel and/or tantalum, in such manner that by means of doping with appropriate lower- or higher-valency elements, the basic crystal lattice is provided with vacancies which, by way of defect chemistry (defect structure), make it easier for the microparticles to be electronically polarized.
    • 本发明涉及一种用于涂覆电导体的组合物及其制备方法。 为了提供电导体的涂料组合物,与现有技术的溶液相比,涂料组合物的局部放电电阻显着增加,而所制备的绝缘层保持高度可延展性,在本发明的范围内提出了组合物,其组成 1-50重量% 在晶格中具有选择性调节的电子缺陷结构的微粒的百分比,使价电子更容易极化的缺陷结构,以及有机和/或有机 - 无机基质,具有选择性调节的电子缺陷结构的微粒由 包括硅,锌,铝,锡,硼,锗,镓,铅,过渡金属和镧系元素和锕系元素的系列元素的氧化物,硫化物,硒化物和/或碲化物,特别是包含硅,钛,锌 ,钇,铈,钒,铪,锆,镍和/或钽,以通过掺杂适当的低价或高价元素的方式,碱性晶格提供有空位,其通过缺陷化学 (缺陷结构),使得微粒更容易被电子极化。
    • 5. 发明授权
    • Coating composition for electrical conductors and method of producing such a composition
    • 电导体用涂料组合物及其制备方法
    • US09580611B2
    • 2017-02-28
    • US12310707
    • 2007-09-04
    • Sener AlbayrakCarsten Becker-WillingerMichael VeithOral Cenk Aktas
    • Sener AlbayrakCarsten Becker-WillingerMichael VeithOral Cenk Aktas
    • C08G77/24C08L75/00C08K3/22H01B3/10C09D7/12H01B3/00C08K3/30C08K9/04C08K9/08
    • C09D7/1225C08K3/22C08K3/30C08K9/04C08K9/08C09D7/62C09D7/67C09D7/68H01B3/006
    • The aim of the invention is to create a composition for coating electric conductors which is significantly more resistant to partial discharges than prior art compositions while the produced insulating layer is highly extensible. Said aim is achieved by a composition comprising 1 to 50 percent by weight of microparticles that have a specifically adjusted electronic defect structure in the crystal lattice, resulting in greater polarizability of the valence electrons, and an organic and/or organic-inorganic matrix. The microparticles that have a specifically adjusted electronic defect structure are composed of oxides, sulfides, selenides, tellurides of the elements which are part of the series encompassing silicon, zinc, aluminum, tin, boron, germanium, gallium, lead, the transition metals, lanthanides, and actinides, particularly from the series encompassing silicon, titanium, zinc, yttrium, cerium, vanadium, hafnium, zirconium, nickel, and/or tantalum, in such a way that the basic lattice is provided with vacant lattice positions by doping 4 the basic lattice with adequate low-valent or higher-valent elements, said vacant lattice positions increasing the electronic polarizability of the microparticles by means of defect chemistry (the defect structure).
    • 本发明的目的是创建一种用于涂覆电导体的组合物,其比现有技术组合物显着地更耐局部放电,而所制备的绝缘层是高度可延展的。 所述目的通过一种组合物来实现,所述组合物包含1至50重量%的在晶格中具有特别调节的电子缺陷结构的微粒,导致更高的价电子的极化率,以及有机和/或有机 - 无机基质。 具有特别调整的电子缺陷结构的微粒由作为包括硅,锌,铝,锡,硼,锗,镓,锡,硼,锗,镓,铅,过渡金属的一部分的元素的元素的氧化物,硫化物,硒化物,碲化物组成, 镧系元素和锕系元素,特别是从包括硅,钛,锌,钇,铈,钒,铪,锆,镍和/或钽的系列中,以通过掺杂4 具有足够的低价或高价元素的基本晶格,所述空位晶格位置通过缺陷化学(缺陷结构)增加微粒的电子极化率。