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1. 发明授权

US07407719B1 Longitudinal magnetic media having a granular magnetic layer 失效
标题翻译：具有粒状磁性层的纵向磁性介质
公开(公告)号：US07407719B1
公开(公告)日：2008-08-05
申请号：US10829164
申请日：2004-04-22
申请人： Erol Girt , Li-Lien Lee , Samuel D. Harkness, IV
发明人： Erol Girt , Li-Lien Lee , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/732 , G11B5/65 , G11B5/7325
摘要： A novel method of manufacturing a longitudinal granular oxide recording medium is disclosed. The method preferably entails obtaining a non-magnetic substrate, heating the substrate at a temperature T1 that is greater than 150° C., forming a first layer with body-centered cubic atomic structure and with a preferred growth orientation, cooling the substrate to a temperature T2 and forming a second layer comprising a magnetic oxide-containing granular magnetic layer with a hexagonal close packed atomic structure and with a preferred growth orientation. The magnetic oxide-containing granular magnetic layer contains magnetic crystal grains that are substantially isolated by an inter-granular region comprising a non-magnetic substance, wherein the non-magnetic substance is preferably an oxide-containing material.
摘要翻译：公开了制造纵向粒状氧化物记录介质的新颖方法。该方法优选需要获得非磁性衬底，在大于150℃的温度T 1加热衬底，形成具有体心立方原子结构的第一层， 200>优选的生长方向，将衬底冷却至温度T 2，并形成包含具有六方密堆积原子结构的含氧化物的颗粒状磁性层的第二层，并且具有<11-20> 首选生长方向。含有磁氧化物的粒状磁性层含有通过包含非磁性物质的颗粒间区域基本隔离的磁性晶粒，其中非磁性物质优选为含氧化物的材料。

2. 发明授权

US08673466B2 CoPtCr-based bit patterned magnetic media 有权
标题翻译：基于CoPtCr的位图形磁介质
公开(公告)号：US08673466B2
公开(公告)日：2014-03-18
申请号：US11525958
申请日：2006-09-25
申请人： Dieter K. Weller , Hans J. Richter , Samuel D. Harkness, IV , Erol Girt
发明人： Dieter K. Weller , Hans J. Richter , Samuel D. Harkness, IV , Erol Girt
IPC分类号： G11B5/66
CPC分类号： G11B5/656 , G11B5/667 , G11B5/732 , G11B5/855
摘要： A bit patterned magnetic recording medium comprises a substrate having a surface, and a plurality of spaced apart magnetic elements on the surface, each element constituting a discrete magnetic domain or bit of the same structure and comprised of a stack of thin film layers including in order from the substrate surface: a seed layer; and a perpendicular magnetic recording layer in contact with a surface of the seed layer and comprising a Co 1-x-yPtxCry alloy material, where 0.05≦x≦0.35 and 0≦y≦0.15. The Co1-x-yPtxCry alloy material has a first order magnetic anisotropy constant K1 up to about 2×107 erg/cm3, a saturation magnetization Ms up to about 1200 emu/cm3, an anisotropy field HK=2K1/Ms up to about 35 kOe, a hexagonal (0001) crystal structure with c-axis perpendicular to a surface thereof, and an X-Ray diffraction (XRD) rocking curve with a full width at half maximum (FWHM) of ˜5° or less.
摘要翻译：位图形磁记录介质包括具有表面的基板和表面上的多个间隔开的磁性元件，每个元件构成相同结构的离散磁畴或位，并且包括一层薄层，从基底表面：种子层; 以及与种子层的表面接触并包括Co 1-x-yPt x Cry合金材料的垂直磁记录层，其中0.05≤x≤0.35和0≤y≤0.15。 Co1-x-yPtxCry合金材料具有高达约2×107erg / cm3的一阶磁各向异性常数K1，高达约1200emu / cm3的饱和磁化强度Ms，高达约35的各向异性磁场HK = 2K1 / Ms kOe，具有垂直于其表面的c轴的六边形（0001）晶体结构，以及具有约5°或更小的全半宽度（FWHM）的X射线衍射（XRD）摇摆曲线。

3. 发明授权

US07235314B2 Inter layers for perpendicular recording media 有权
标题翻译：用于垂直记录介质的层间
公开(公告)号：US07235314B2
公开(公告)日：2007-06-26
申请号：US10797111
申请日：2004-03-11
申请人： Qixu Chen , Chung-Hee Chang , Li-Lien Lee , Samuel D. Harkness, IV
发明人： Qixu Chen , Chung-Hee Chang , Li-Lien Lee , Samuel D. Harkness, IV
IPC分类号： G11B5/66 , G11B5/70
CPC分类号： G11B5/732 , G11B5/65 , G11B5/667 , G11B5/7325
摘要： A magnetic recording medium, the order of layers in which is the substrate, the soft underlayer, the seedlayer, the 1st RuCrx-containing interlayer, the 2nd RuCrx-containing interlayer and the magnetic recording layer with preferably a oxides or nitrides-containing magnetic layer comprising grains, is disclosed. High-chromium ruthenium-chromium alloy used as inter layers significantly enhances coercivity and SMNR preferably due to the improved lattice match between RuCr inter layers and CoPt-based magnetic recording layers, and the surface energy of RuCr layers contributes to the performance improvement with the high-chromium addition into Ru inter layers.
摘要翻译：磁记录介质，层的顺序为衬底，软底层，种子层，含有CrCrNi x的中间层，2层，并且具有优选含有包含晶粒的含氧化物或含氮化物的磁性层的磁记录层被公开。用作层间的高铬钌 - 铬合金显着提高了矫顽力和SMNR，这主要是由于RuCr层间和CoPt基磁记录层之间的晶格匹配得到改善，RuCr层的表面能有助于提高性能 - 铬添加到Ru层间。

4. 发明授权

US07521136B1 Coupling enhancement for medium with anti-ferromagnetic coupling 失效
标题翻译：具有反铁磁耦合介质的耦合增强
公开(公告)号：US07521136B1
公开(公告)日：2009-04-21
申请号：US11358128
申请日：2006-02-22
申请人： Stella Wu Zhong , Samuel D. Harkness, IV
发明人： Stella Wu Zhong , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/66 , Y10T428/12465 , Y10T428/12646 , Y10T428/12861 , Y10T428/12868 , Y10T428/12875 , Y10T428/12931 , Y10T428/12986 , Y10T428/24942 , Y10T428/265 , Y10T428/31
摘要： Laminated magnetic recording medium with two Co-containing layers separated by a non-magnetic Ru-containing interlayer is stabilized by Ru-containing layer between the recording layers and Co-containing stabilization layers through anti-ferromagnetic coupling. The insertion of Co layer beneath Ru spacer has resulted in increased coupling, and further coupling enhancement is achieved by low pressure process of Co and Ru layers.
摘要翻译：通过非磁性含Ru中间层分离的具有两个含Co层的层压磁记录介质通过反铁磁耦合在记录层和含Co稳定层之间的含Ru层保持稳定。 Co层下面的Co层的插入导致耦合增加，并且通过Co和Ru层的低压工艺实现进一步的耦合增强。

5. 发明授权

US07968792B2 Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same 有权
标题翻译：量子点敏化宽带隙半导体光电器件及其制造方法
公开(公告)号：US07968792B2
公开(公告)日：2011-06-28
申请号：US11713652
申请日：2007-03-05
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/0328 , H01L31/0352
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

6. 发明授权

US08975513B2 Quantum dot-sensitized wide bandgap semiconductor heterojunction photovoltaic devices 有权
标题翻译：量子点敏化宽带隙半导体异质结光伏器件
公开(公告)号：US08975513B2
公开(公告)日：2015-03-10
申请号：US13171356
申请日：2011-06-28
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

7. 发明授权

US08119263B2 Tuning exchange coupling in magnetic recording media 有权
标题翻译：调谐磁记录介质中的交换耦合
公开(公告)号：US08119263B2
公开(公告)日：2012-02-21
申请号：US11231796
申请日：2005-09-22
申请人： Thomas Patrick Nolan , Samuel D. Harkness, IV
发明人： Thomas Patrick Nolan , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/65 , G11B5/851
摘要： A magnetic recording medium having a substrate, a first magnetic layer and a second magnetic layer, in this order, wherein an exchange coupling in the first magnetic layer is lower than an exchange coupling in the second magnetic layer, and the first and second magnetic layers are in a film stack so that magnetic grains in the first magnetic layer are exchange coupled by a pathway through the second magnetic layer is disclosed. A method of manufacturing a magnetic recording medium by obtaining a substrate, depositing a first magnetic layer at a first sputter gas pressure and depositing a second magnetic layer at a second sputter gas pressure, in this order, wherein the first sputter gas pressure is higher than the second sputter gas pressure, and an exchange coupling in the first magnetic layer is lower than an exchange coupling in the second magnetic layer is also disclosed.
摘要翻译：一种具有基板，第一磁性层和第二磁性层的磁记录介质，其中第一磁性层中的交换耦合低于第二磁性层中的交换耦合，第一和第二磁性层公开了通过第二磁性层的路径将第一磁性层中的磁性颗粒交换耦合的薄膜叠层。一种通过获得衬底制造磁记录介质的方法，以第一溅射气体压力沉积第一磁性层并以第二溅射气体压力沉积第二磁性层，其中第一溅射气体压力高于第二溅射气体压力和第一磁性层中的交换耦合也低于第二磁性层中的交换耦合。

8. 发明申请

US20120003773A1 QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES & METHODS OF FABRICATING SAME 有权
标题翻译：量子点敏感宽带半导体光电器件及其制造方法
公开(公告)号：US20120003773A1
公开(公告)日：2012-01-05
申请号：US13171356
申请日：2011-06-28
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/18 , B82Y99/00
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg>2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有限定至少两个开放空间的2维矩阵形式的Eg> 2.0eV的宽带隙（WBG）半导体材料和具有Eg <2.0eV的较窄带隙半导体材料，其形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

9. 发明授权

US07531248B1 Perpendicular recording magnetic media having a granular magnetic recording layer and an amorphous soft underlayer 有权
标题翻译：具有粒状磁记录层和无定形软底层的垂直记录磁性介质
公开(公告)号：US07531248B1
公开(公告)日：2009-05-12
申请号：US11017657
申请日：2004-12-22
申请人： Thomas Patrick Nolan , Zhong Stella Wu , Samuel D. Harkness, IV
发明人： Thomas Patrick Nolan , Zhong Stella Wu , Samuel D. Harkness, IV
IPC分类号： G11B5/667
CPC分类号： G11B5/667 , G11B5/65
摘要： A perpendicular magnetic recording medium having a substrate, an amorphous soft underlayer of thickness 30 nm or greater, and a granular magnetic recording layer for perpendicular recording is disclosed. The granular magnetic recording layer includes a non-magnetic region between magnetic grains, wherein the non-magnetic region includes metal nitride or metal carbide and provides exchange decoupling between the magnetic grains. The perpendicular recording medium of this invention reduces DC noise and increases media signal-to-noise ratio; it reduces surface roughness, which in turn reduces the head-to-media spacing and the head-to-amorphous soft underlayer spacing.
摘要翻译：公开了具有基板，厚度为30nm以上的无定形软底层和用于垂直记录的粒状磁记录层的垂直磁记录介质。颗粒状磁记录层包括磁性颗粒之间的非磁性区域，其中非磁性区域包括金属氮化物或金属碳化物，并提供磁性颗粒之间的交换去耦合。本发明的垂直记录介质降低了DC噪声并提高了介质信噪比; 它降低了表面粗糙度，这反过来降低了头对媒体间距和头对非软的软下层间距。

10. 发明授权

US07166320B1 Post-deposition annealed recording media and method of manufacturing the same 失效
标题翻译：后沉积退火记录介质及其制造方法
公开(公告)号：US07166320B1
公开(公告)日：2007-01-23
申请号：US09781978
申请日：2001-02-14
申请人： Samuel D. Harkness, IV , Jie Zou
发明人： Samuel D. Harkness, IV , Jie Zou
IPC分类号： B05D5/12
CPC分类号： G11B5/8408 , C23C14/165 , C23C14/5806 , G11B5/72
摘要： A novel technique for incorporating rapid thermal annealing into media sputter fabrication has facilitated the production of flyable media samples. Discs are fabricated with standard processing techniques to control physical grain size and crystallite texture. A CrMn caplayer ranging in thickness between 0.5 and 5 nm is subsequently deposited to provide the Mn-diffusant necessary to achieve post-treatment exchange de-coupling. While still in-situ and before application of protective overcoats, the discs are exposed to temperatures between 200° C. and 350° C. compatible with most media production processes. A threefold increase in coercive force (peak reaching ˜3800 Oe) and 10 dB improvement in medium signal-to-noise ratio is observed for the optimized process.
摘要翻译：用于将快速热退火引入介质溅射制造的新颖技术促进了可飞行介质样品的生产。光盘采用标准处理技术制造，以控制物理粒度和微晶纹理。随后沉积厚度在0.5和5nm之间的CrMn覆盖层以提供实现后处理交换去耦合所必需的Mn扩散剂。虽然仍然在原位和施加保护性外涂层之前，盘暴露于与大多数介质生产过程兼容的200℃和350℃之间的温度。对于优化的过程，观察到矫顽力（峰值达到〜3800Oe）增加三倍和中等信噪比的10dB提高。

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